Reliable Ti/Al and Ti/Al/Ni/Au ohmic contacts to n-type GaN formed by vacuum annealing
In this work, we investigated Ti/Al and Ti/Al/Ni/Au ohmic contact metallizations to n-GaN which were formed by a vacuum annealing method. Our effort was focused on minimizing the oxidation of the Al, which limits the performance of the Al-based contacts. We have also investigated the effect of the N...
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| Veröffentlicht in: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2001-01, Vol.19 (1), p.261-267 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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