Reliable Ti/Al and Ti/Al/Ni/Au ohmic contacts to n-type GaN formed by vacuum annealing

In this work, we investigated Ti/Al and Ti/Al/Ni/Au ohmic contact metallizations to n-GaN which were formed by a vacuum annealing method. Our effort was focused on minimizing the oxidation of the Al, which limits the performance of the Al-based contacts. We have also investigated the effect of the Ni/Au overlayers on the performance and morphological characteristics of the contacts. Vacuum annealing was found to require temperatures similar to those used in halogen lamp rapid thermal annealing for forming ohmic contacts on n-type GaN, but with minimal oxidation of the Al surface. It was found that the Ni/Au overlayer on the Ti/Al reduces the specific contact resistivity values slightly and at the same time causes an upward shift, by ∼200 °C, in the contact formation temperature. For the Ti/Al and Ti/Al/Ni/Au on n-GaN doped at 1.1×10 18 cm −3 , a minimum specific contact resistivity of 1.2×10 −5 Ω cm 2 was achieved after 950 and 1100 °C anneals, respectively. Auger electron spectroscopic studies revealed that obtaining optimum ohmic contact resistance requires the penetration of Al through the Ti layer to reach the GaN surface in addition to N outdiffusing from the GaN surface and into the metal layers. Atomic force microscopy investigations indicated that the introduction of the Ni/Au overlayer on the Ti/Al had the effect of increasing the surface roughness after annealing.