Scanning tunneling spectroscopy characterization of As + implanted InP (100) single crystals
Current–voltage measurements performed with a scanning tunneling microscope were carried out on (100)-oriented InP single crystals implanted with As + ions. I–V investigations were made for InP crystals implanted with two different implantation doses, namely, 6.2×10 14 and 6.2×10 15 cm −2 , and anne...
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| Veröffentlicht in: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2000-09, Vol.18 (5), p.2590-2592 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
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