A novel strategy for the fabrication of AlN–AlON refractories: Nitrogen gas pressure sintering of Al 4 O 4 C

A novel strategy was exploited for the fabrication of AlN–AlON refractories via nitrogen gas pressure sintering of Al 4 O 4 C. The phase transformation and microstructure evolution during the reaction at 1600–1800°C were thoroughly investigated. The results indicated that the high N 2 pressure was e...

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Veröffentlicht in:Journal of the American Ceramic Society 2022-12, Vol.105 (12), p.7111-7121
Hauptverfasser: Yu, Chao, Zheng, Yongxiang, Xing, Guangchao, Ding, Jun, Zhu, Hongxi, Wang, Zhoufu, Deng, Chengji, Di, Jinghui
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container_end_page 7121
container_issue 12
container_start_page 7111
container_title Journal of the American Ceramic Society
container_volume 105
creator Yu, Chao
Zheng, Yongxiang
Xing, Guangchao
Ding, Jun
Zhu, Hongxi
Wang, Zhoufu
Deng, Chengji
Di, Jinghui
description A novel strategy was exploited for the fabrication of AlN–AlON refractories via nitrogen gas pressure sintering of Al 4 O 4 C. The phase transformation and microstructure evolution during the reaction at 1600–1800°C were thoroughly investigated. The results indicated that the high N 2 pressure was essential for the effective nitridation. The in situ generated AlN–AlON refractories had a homogeneous local chemical composition, and the (101) plane of AlN and the (222) lattice plane of Al 5 O 6 N were bonded at their grain boundary with no amorphous phase. The as‐fabricated AlN–AlON refractories treated at 1700°C by a 20 atm nitrogen pressure exhibited an optimum bending strength of 111.10 MPa, combining an apparent porosity of 20% with a low bulk density of 1.97 g/cm 3 . The diffusion of the generated oxygen led to an increase in the apparent porosity and decrease in the bulk density at 1800°C. Furthermore, the fabrication mechanism of AlN–AlON refractories under the nitrogen gas‐pressure was discussed.
doi_str_mv 10.1111/jace.18709
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title A novel strategy for the fabrication of AlN–AlON refractories: Nitrogen gas pressure sintering of Al 4 O 4 C
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