Significant Enhancement of the Dielectric Constant through the Doping of CeO 2 into HfO 2 by Atomic Layer Deposition
Films of CeO 2 were deposited by atomic layer deposition ( ALD ) using a Ce (mmp) 4 [mmp = 1‐methoxy‐2‐methyl‐2‐propanolate] precursor and H 2 O reactant. The growth characteristics and film properties of ALD CeO 2 were investigated. The ALD CeO 2 process produced highly pure, stoichiometric films w...
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| Veröffentlicht in: | Journal of the American Ceramic Society 2014-04, Vol.97 (4), p.1164-1169 |
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| container_title | Journal of the American Ceramic Society |
| container_volume | 97 |
| creator | Kim, Woo‐Hee Kim, Min‐Kyu Oh, Il‐Kwon Maeng, Wan Joo Cheon, Taehoon Kim, Soo‐Hyun Noori, Atif Thompson, David Chu, Schubert Kim, Hyungjun |
| description | Films of
CeO
2
were deposited by atomic layer deposition (
ALD
) using a
Ce
(mmp)
4
[mmp = 1‐methoxy‐2‐methyl‐2‐propanolate] precursor and H
2
O reactant. The growth characteristics and film properties of
ALD
CeO
2
were investigated. The
ALD
CeO
2
process produced highly pure, stoichiometric films with polycrystalline cubic phases. Using the
ALD
CeO
2
process, the effects of
Ce
doping into an
HfO
2
gate dielectric were systematically investigated. Regardless of
Ce
/(
Ce
+
Hf
) composition, all
ALD
Ce
x
Hf
1−
x
O
2
films exhibited constant growth rates of approximately 1.3 Å/cycle, which is essentially identical to the
ALD
HfO
2
growth rates. After high‐temperature vacuum annealing at 900°C, it was verified, based on
X
‐ray diffraction and high‐resolution cross‐sectional transmission electron microscopy results, that all samples with various
Ce
/(
Ce
+
Hf
) compositions were transformed from nanocrystalline to stabilized cubic or tetragonal
HfO
2
phases. In addition, the dielectric constant of the
Ce
x
Hf
1−
x
O
2
films significantly increased, depending on the
Ce
doping content. The maximum dielectric constant value was found to be nearly 39 for the
Ce
/(
Ce
+
Hf
) concentration of ~11%. |
| doi_str_mv | 10.1111/jace.12762 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1111_jace_12762</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1111_jace_12762</sourcerecordid><originalsourceid>FETCH-LOGICAL-c146t-b15c60edcb70ca3c78b7b408daf7ab19f5a70ce5ed904281199518d7fec6ef1b3</originalsourceid><addsrcrecordid>eNotkDFPwzAQhS0EEqWw8As8I6X43CROxiotFClSB2CObOfcuGrtyjZD_z0J5ZZ7p_fuDR8hz8AWMM7rQWpcABclvyEzKArIeA3lLZkxxngmKs7uyUOMh_GEuspnJH3avbPGaukS3bhBOo0nHLU3NA1I1xaPqFOwmjbexTTF0hD8z364-v5s3X5KN7ijnFqXPN2aSaoLXSV_Gj9becFA13j20Sbr3SO5M_IY8el_z8n32-ar2Wbt7v2jWbWZhrxMmYJClwx7rQTTcqlFpYTKWdVLI6SC2hRyNLDAvmY5rwDquoCqFwZ1iQbUck5err06-BgDmu4c7EmGSwesm3h1E6_uj9fyF6KDXyc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Significant Enhancement of the Dielectric Constant through the Doping of CeO 2 into HfO 2 by Atomic Layer Deposition</title><source>Wiley Online Library</source><creator>Kim, Woo‐Hee ; Kim, Min‐Kyu ; Oh, Il‐Kwon ; Maeng, Wan Joo ; Cheon, Taehoon ; Kim, Soo‐Hyun ; Noori, Atif ; Thompson, David ; Chu, Schubert ; Kim, Hyungjun</creator><contributor>Dunn, B.</contributor><creatorcontrib>Kim, Woo‐Hee ; Kim, Min‐Kyu ; Oh, Il‐Kwon ; Maeng, Wan Joo ; Cheon, Taehoon ; Kim, Soo‐Hyun ; Noori, Atif ; Thompson, David ; Chu, Schubert ; Kim, Hyungjun ; Dunn, B.</creatorcontrib><description>Films of
CeO
2
were deposited by atomic layer deposition (
ALD
) using a
Ce
(mmp)
4
[mmp = 1‐methoxy‐2‐methyl‐2‐propanolate] precursor and H
2
O reactant. The growth characteristics and film properties of
ALD
CeO
2
were investigated. The
ALD
CeO
2
process produced highly pure, stoichiometric films with polycrystalline cubic phases. Using the
ALD
CeO
2
process, the effects of
Ce
doping into an
HfO
2
gate dielectric were systematically investigated. Regardless of
Ce
/(
Ce
+
Hf
) composition, all
ALD
Ce
x
Hf
1−
x
O
2
films exhibited constant growth rates of approximately 1.3 Å/cycle, which is essentially identical to the
ALD
HfO
2
growth rates. After high‐temperature vacuum annealing at 900°C, it was verified, based on
X
‐ray diffraction and high‐resolution cross‐sectional transmission electron microscopy results, that all samples with various
Ce
/(
Ce
+
Hf
) compositions were transformed from nanocrystalline to stabilized cubic or tetragonal
HfO
2
phases. In addition, the dielectric constant of the
Ce
x
Hf
1−
x
O
2
films significantly increased, depending on the
Ce
doping content. The maximum dielectric constant value was found to be nearly 39 for the
Ce
/(
Ce
+
Hf
) concentration of ~11%.</description><identifier>ISSN: 0002-7820</identifier><identifier>EISSN: 1551-2916</identifier><identifier>DOI: 10.1111/jace.12762</identifier><language>eng</language><ispartof>Journal of the American Ceramic Society, 2014-04, Vol.97 (4), p.1164-1169</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c146t-b15c60edcb70ca3c78b7b408daf7ab19f5a70ce5ed904281199518d7fec6ef1b3</citedby><cites>FETCH-LOGICAL-c146t-b15c60edcb70ca3c78b7b408daf7ab19f5a70ce5ed904281199518d7fec6ef1b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><contributor>Dunn, B.</contributor><creatorcontrib>Kim, Woo‐Hee</creatorcontrib><creatorcontrib>Kim, Min‐Kyu</creatorcontrib><creatorcontrib>Oh, Il‐Kwon</creatorcontrib><creatorcontrib>Maeng, Wan Joo</creatorcontrib><creatorcontrib>Cheon, Taehoon</creatorcontrib><creatorcontrib>Kim, Soo‐Hyun</creatorcontrib><creatorcontrib>Noori, Atif</creatorcontrib><creatorcontrib>Thompson, David</creatorcontrib><creatorcontrib>Chu, Schubert</creatorcontrib><creatorcontrib>Kim, Hyungjun</creatorcontrib><title>Significant Enhancement of the Dielectric Constant through the Doping of CeO 2 into HfO 2 by Atomic Layer Deposition</title><title>Journal of the American Ceramic Society</title><description>Films of
CeO
2
were deposited by atomic layer deposition (
ALD
) using a
Ce
(mmp)
4
[mmp = 1‐methoxy‐2‐methyl‐2‐propanolate] precursor and H
2
O reactant. The growth characteristics and film properties of
ALD
CeO
2
were investigated. The
ALD
CeO
2
process produced highly pure, stoichiometric films with polycrystalline cubic phases. Using the
ALD
CeO
2
process, the effects of
Ce
doping into an
HfO
2
gate dielectric were systematically investigated. Regardless of
Ce
/(
Ce
+
Hf
) composition, all
ALD
Ce
x
Hf
1−
x
O
2
films exhibited constant growth rates of approximately 1.3 Å/cycle, which is essentially identical to the
ALD
HfO
2
growth rates. After high‐temperature vacuum annealing at 900°C, it was verified, based on
X
‐ray diffraction and high‐resolution cross‐sectional transmission electron microscopy results, that all samples with various
Ce
/(
Ce
+
Hf
) compositions were transformed from nanocrystalline to stabilized cubic or tetragonal
HfO
2
phases. In addition, the dielectric constant of the
Ce
x
Hf
1−
x
O
2
films significantly increased, depending on the
Ce
doping content. The maximum dielectric constant value was found to be nearly 39 for the
Ce
/(
Ce
+
Hf
) concentration of ~11%.</description><issn>0002-7820</issn><issn>1551-2916</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNotkDFPwzAQhS0EEqWw8As8I6X43CROxiotFClSB2CObOfcuGrtyjZD_z0J5ZZ7p_fuDR8hz8AWMM7rQWpcABclvyEzKArIeA3lLZkxxngmKs7uyUOMh_GEuspnJH3avbPGaukS3bhBOo0nHLU3NA1I1xaPqFOwmjbexTTF0hD8z364-v5s3X5KN7ijnFqXPN2aSaoLXSV_Gj9becFA13j20Sbr3SO5M_IY8el_z8n32-ar2Wbt7v2jWbWZhrxMmYJClwx7rQTTcqlFpYTKWdVLI6SC2hRyNLDAvmY5rwDquoCqFwZ1iQbUck5err06-BgDmu4c7EmGSwesm3h1E6_uj9fyF6KDXyc</recordid><startdate>201404</startdate><enddate>201404</enddate><creator>Kim, Woo‐Hee</creator><creator>Kim, Min‐Kyu</creator><creator>Oh, Il‐Kwon</creator><creator>Maeng, Wan Joo</creator><creator>Cheon, Taehoon</creator><creator>Kim, Soo‐Hyun</creator><creator>Noori, Atif</creator><creator>Thompson, David</creator><creator>Chu, Schubert</creator><creator>Kim, Hyungjun</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201404</creationdate><title>Significant Enhancement of the Dielectric Constant through the Doping of CeO 2 into HfO 2 by Atomic Layer Deposition</title><author>Kim, Woo‐Hee ; Kim, Min‐Kyu ; Oh, Il‐Kwon ; Maeng, Wan Joo ; Cheon, Taehoon ; Kim, Soo‐Hyun ; Noori, Atif ; Thompson, David ; Chu, Schubert ; Kim, Hyungjun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c146t-b15c60edcb70ca3c78b7b408daf7ab19f5a70ce5ed904281199518d7fec6ef1b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Woo‐Hee</creatorcontrib><creatorcontrib>Kim, Min‐Kyu</creatorcontrib><creatorcontrib>Oh, Il‐Kwon</creatorcontrib><creatorcontrib>Maeng, Wan Joo</creatorcontrib><creatorcontrib>Cheon, Taehoon</creatorcontrib><creatorcontrib>Kim, Soo‐Hyun</creatorcontrib><creatorcontrib>Noori, Atif</creatorcontrib><creatorcontrib>Thompson, David</creatorcontrib><creatorcontrib>Chu, Schubert</creatorcontrib><creatorcontrib>Kim, Hyungjun</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of the American Ceramic Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Woo‐Hee</au><au>Kim, Min‐Kyu</au><au>Oh, Il‐Kwon</au><au>Maeng, Wan Joo</au><au>Cheon, Taehoon</au><au>Kim, Soo‐Hyun</au><au>Noori, Atif</au><au>Thompson, David</au><au>Chu, Schubert</au><au>Kim, Hyungjun</au><au>Dunn, B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Significant Enhancement of the Dielectric Constant through the Doping of CeO 2 into HfO 2 by Atomic Layer Deposition</atitle><jtitle>Journal of the American Ceramic Society</jtitle><date>2014-04</date><risdate>2014</risdate><volume>97</volume><issue>4</issue><spage>1164</spage><epage>1169</epage><pages>1164-1169</pages><issn>0002-7820</issn><eissn>1551-2916</eissn><abstract>Films of
CeO
2
were deposited by atomic layer deposition (
ALD
) using a
Ce
(mmp)
4
[mmp = 1‐methoxy‐2‐methyl‐2‐propanolate] precursor and H
2
O reactant. The growth characteristics and film properties of
ALD
CeO
2
were investigated. The
ALD
CeO
2
process produced highly pure, stoichiometric films with polycrystalline cubic phases. Using the
ALD
CeO
2
process, the effects of
Ce
doping into an
HfO
2
gate dielectric were systematically investigated. Regardless of
Ce
/(
Ce
+
Hf
) composition, all
ALD
Ce
x
Hf
1−
x
O
2
films exhibited constant growth rates of approximately 1.3 Å/cycle, which is essentially identical to the
ALD
HfO
2
growth rates. After high‐temperature vacuum annealing at 900°C, it was verified, based on
X
‐ray diffraction and high‐resolution cross‐sectional transmission electron microscopy results, that all samples with various
Ce
/(
Ce
+
Hf
) compositions were transformed from nanocrystalline to stabilized cubic or tetragonal
HfO
2
phases. In addition, the dielectric constant of the
Ce
x
Hf
1−
x
O
2
films significantly increased, depending on the
Ce
doping content. The maximum dielectric constant value was found to be nearly 39 for the
Ce
/(
Ce
+
Hf
) concentration of ~11%.</abstract><doi>10.1111/jace.12762</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 0002-7820 |
| ispartof | Journal of the American Ceramic Society, 2014-04, Vol.97 (4), p.1164-1169 |
| issn | 0002-7820 1551-2916 |
| language | eng |
| recordid | cdi_crossref_primary_10_1111_jace_12762 |
| source | Wiley Online Library |
| title | Significant Enhancement of the Dielectric Constant through the Doping of CeO 2 into HfO 2 by Atomic Layer Deposition |
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