A Boosting Pass Gate With Improved Switching Characteristics and No Overdriving for Programmable Routing Switch Based on Crystalline In-Ga-Zn-O Technology

A boosting pass gate (BPG) suitable for a programmable routing switch including a c-axis aligned crystal In-Ga-Zn-O (CAAC-IGZO) field effect transistor (FET) is proposed. The CAAC-IGZO is one of crystalline oxide semiconductors (OS). The proposed BPG (OS-based BPG, OS BPG) has a combination of a pas...

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Veröffentlicht in:	IEEE transactions on very large scale integration (VLSI) systems 2015-03, Vol.23 (3), p.422-434
Hauptverfasser:	Okamoto, Yuki, Nakagawa, Takashi, Aoki, Takeshi, Ikeda, Masataka, Kozuma, Munehiro, Osada, Takeshi, Kurokawa, Yoshiyuki, Ikeda, Takayuki, Yamade, Naoto, Okazaki, Yutaka, Miyairi, Hidekazu, Fujita, Masahiro, Koyama, Jun, Yamazaki, Shunpei
Format:	Artikel
Sprache:	eng
Schlagworte:	Boosting effect Field effect transistors field-programmable gate array (FPGA) In-Ga-Zn-O (IGZO) Logic gates oxide semiconductor programmable logic device programmable switch Random access memory reconfigurable system Routing Switches Tin
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