Polarization dynamics and non-equilibrium switching processes in ferroelectrics
Time- and temperature-dependent effects are critical for the operation of non-volatile memories based on ferroelectrics. In this paper, we assume a domain nucleation process of the polarization reversal and we discuss the polarization dynamics in the framework of a non-equilibrium statistical model....
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| Veröffentlicht in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control ferroelectrics, and frequency control, 2011-09, Vol.58 (9), p.1867-1873 |
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| container_issue | 9 |
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| container_title | IEEE transactions on ultrasonics, ferroelectrics, and frequency control |
| container_volume | 58 |
| creator | Vopsaroiu, M. Weaver, P. M. Cain, M. G. Reece, M. J. Kok Boon Chong |
| description | Time- and temperature-dependent effects are critical for the operation of non-volatile memories based on ferroelectrics. In this paper, we assume a domain nucleation process of the polarization reversal and we discuss the polarization dynamics in the framework of a non-equilibrium statistical model. This approach yields analytical expressions which can be used to explain a wide range of time- and temperature-dependent effects in ferroelectrics. Domain wall velocity derived in this work is consistent with a domain wall creep behavior in ferroelectrics. In the limiting case of para-electric equilibrium, the model yields the well-known Curie law. We also present experimental P-E loops data obtained for soft ferroelectrics at various temperatures. The experimental coercive fields at various temperatures are well predicted by the coercive field formula derived in our theory. |
| doi_str_mv | 10.1109/TUFFC.2011.2025 |
| format | Article |
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M. ; Cain, M. G. ; Reece, M. J. ; Kok Boon Chong</creator><creatorcontrib>Vopsaroiu, M. ; Weaver, P. M. ; Cain, M. G. ; Reece, M. J. ; Kok Boon Chong</creatorcontrib><description>Time- and temperature-dependent effects are critical for the operation of non-volatile memories based on ferroelectrics. In this paper, we assume a domain nucleation process of the polarization reversal and we discuss the polarization dynamics in the framework of a non-equilibrium statistical model. This approach yields analytical expressions which can be used to explain a wide range of time- and temperature-dependent effects in ferroelectrics. Domain wall velocity derived in this work is consistent with a domain wall creep behavior in ferroelectrics. In the limiting case of para-electric equilibrium, the model yields the well-known Curie law. We also present experimental P-E loops data obtained for soft ferroelectrics at various temperatures. The experimental coercive fields at various temperatures are well predicted by the coercive field formula derived in our theory.</description><identifier>ISSN: 0885-3010</identifier><identifier>EISSN: 1525-8955</identifier><identifier>DOI: 10.1109/TUFFC.2011.2025</identifier><identifier>PMID: 21937319</identifier><identifier>CODEN: ITUCER</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Coercive force ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Constraining ; Dielectrics, piezoelectrics, and ferroelectrics and their properties ; Domain walls ; Dynamics ; Electric fields ; Electronics ; Energy barrier ; Exact sciences and technology ; Ferroelectric materials ; Ferroelectricity and antiferroelectricity ; Frequency measurement ; Integrated circuits ; Integrated circuits by function (including memories and processors) ; Mathematical model ; Mathematical models ; Nucleation ; Physics ; Polarization ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Switches ; Switching phenomena ; Temperature dependence ; Temperature measurement</subject><ispartof>IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 2011-09, Vol.58 (9), p.1867-1873</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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M.</creatorcontrib><creatorcontrib>Cain, M. G.</creatorcontrib><creatorcontrib>Reece, M. J.</creatorcontrib><creatorcontrib>Kok Boon Chong</creatorcontrib><title>Polarization dynamics and non-equilibrium switching processes in ferroelectrics</title><title>IEEE transactions on ultrasonics, ferroelectrics, and frequency control</title><addtitle>T-UFFC</addtitle><addtitle>IEEE Trans Ultrason Ferroelectr Freq Control</addtitle><description>Time- and temperature-dependent effects are critical for the operation of non-volatile memories based on ferroelectrics. In this paper, we assume a domain nucleation process of the polarization reversal and we discuss the polarization dynamics in the framework of a non-equilibrium statistical model. This approach yields analytical expressions which can be used to explain a wide range of time- and temperature-dependent effects in ferroelectrics. Domain wall velocity derived in this work is consistent with a domain wall creep behavior in ferroelectrics. In the limiting case of para-electric equilibrium, the model yields the well-known Curie law. We also present experimental P-E loops data obtained for soft ferroelectrics at various temperatures. The experimental coercive fields at various temperatures are well predicted by the coercive field formula derived in our theory.</description><subject>Applied sciences</subject><subject>Coercive force</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Constraining</subject><subject>Dielectrics, piezoelectrics, and ferroelectrics and their properties</subject><subject>Domain walls</subject><subject>Dynamics</subject><subject>Electric fields</subject><subject>Electronics</subject><subject>Energy barrier</subject><subject>Exact sciences and technology</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity and antiferroelectricity</subject><subject>Frequency measurement</subject><subject>Integrated circuits</subject><subject>Integrated circuits by function (including memories and processors)</subject><subject>Mathematical model</subject><subject>Mathematical models</subject><subject>Nucleation</subject><subject>Physics</subject><subject>Polarization</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Switches</subject><subject>Switching phenomena</subject><subject>Temperature dependence</subject><subject>Temperature measurement</subject><issn>0885-3010</issn><issn>1525-8955</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqF0c9LHDEUB_AglbpdPXsolKFQepo1Lz8mybEsbisIeljPQyaT2MhMRpMZZPvXN-NuFXoRQnLI5z1e8kXoHPAKAKuL7d1ms14RDJA3wo_QAjjhpVScf0ALLCUvKQZ8gj6l9IAxMKbIR3RCQFFBQS3Qze3Q6ej_6NEPoWh3QffepEKHtghDKO3T5DvfRD_1RXr2o_ntw33xGAdjU7Kp8KFwNsbBdtaMMVeeomOnu2TPDucS3W0ut-tf5fXNz6v1j-vSMAFj6XRDGyFx66RprKk0b1oDUiglOXOKykaQykiMpaMsL56nxdCKSmsHjVB0ib7v--ZZniabxrr3ydiu08EOU6oVqSgRhPB3pVRUScxAZPn1P_kwTDHkZ8yoYtXcdIku9sjEIaVoXf0Yfa_jrgZcz5nUL5nUcyb1nEmu-HJoOzW9bV_9vxAy-HYAOhnduaiD8enNMQ75B1h2n_fOW2tfrytMsOQV_QtBAZzk</recordid><startdate>20110901</startdate><enddate>20110901</enddate><creator>Vopsaroiu, M.</creator><creator>Weaver, P. 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J. ; Kok Boon Chong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c471t-fab3b780df8cbec6a5bdc18799854f938b726c8008f34f34573101d76aaf1b793</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Applied sciences</topic><topic>Coercive force</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Constraining</topic><topic>Dielectrics, piezoelectrics, and ferroelectrics and their properties</topic><topic>Domain walls</topic><topic>Dynamics</topic><topic>Electric fields</topic><topic>Electronics</topic><topic>Energy barrier</topic><topic>Exact sciences and technology</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity and antiferroelectricity</topic><topic>Frequency measurement</topic><topic>Integrated circuits</topic><topic>Integrated circuits by function (including memories and processors)</topic><topic>Mathematical model</topic><topic>Mathematical models</topic><topic>Nucleation</topic><topic>Physics</topic><topic>Polarization</topic><topic>Semiconductor electronics. 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| subjects | Applied sciences Coercive force Condensed matter: electronic structure, electrical, magnetic, and optical properties Constraining Dielectrics, piezoelectrics, and ferroelectrics and their properties Domain walls Dynamics Electric fields Electronics Energy barrier Exact sciences and technology Ferroelectric materials Ferroelectricity and antiferroelectricity Frequency measurement Integrated circuits Integrated circuits by function (including memories and processors) Mathematical model Mathematical models Nucleation Physics Polarization Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Switches Switching phenomena Temperature dependence Temperature measurement |
| title | Polarization dynamics and non-equilibrium switching processes in ferroelectrics |
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