Near-Field Analysis of Terahertz Pulse Generation From Photo-Excited Charge Density Gradients

Excitation of photo-current transients at semiconductor surfaces by subpicosecond optical pulses gives rise to emission of electromagnetic pulses of terahertz (THz) frequency radiation. To correlate the THz emission with the photo-excited charge density distribution and the photo-current direction,...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on terahertz science and technology 2015-03, Vol.5 (2), p.260-267
Hauptverfasser: Mueckstein, Raimund, Natrella, Michele, Hatem, Osama, Freeman, Joshua R., Graham, Chris S., Renaud, Cyril C., Seeds, Alwyn J., Linfield, Edmund H., Davies, A. Giles, Cannard, Paul J., Robertson, Mike J., Moodie, Dave G., Mitrofanov, Oleg
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Excitation of photo-current transients at semiconductor surfaces by subpicosecond optical pulses gives rise to emission of electromagnetic pulses of terahertz (THz) frequency radiation. To correlate the THz emission with the photo-excited charge density distribution and the photo-current direction, we mapped near-field and far-field distributions of the generated THz waves from GaAs and Fe-doped InGaAs surfaces. The experimental results show that the charge dynamics in the plane of the surface can radiate substantially stronger THz pulses than the charge dynamics in the direction normal to the surface, which is generally regarded as the dominant origin of the emission.
ISSN:2156-342X
2156-3446
DOI:10.1109/TTHZ.2015.2395389