Fluoride Contamination Induced Film Formation in a Gate NiSi Line

Undulate high-resistance nickel silicide film is found in a gate electrode of a logic device. The undulate film is caused by fluoride contamination derived from a chemical dry-cleaning process for silicon (Si) substrate prior to nickel (Ni) sputtering. The undulate film was composed of a thicker nic...

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Veröffentlicht in:	IEEE transactions on semiconductor manufacturing 2013-08, Vol.26 (3), p.355-360
Hauptverfasser:	Futase, Takuya, Tanimoto, Hisanori
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical dry-cleaning Contamination fluoride contamination hillock Kirkendall effect logic devices Logic gates migration Nickel alloys nickel silicide NiSi Silicides Silicon Substrates TEM-EELS XPS {\rm NiSi}_{2}
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