Built-in redundancy analysis for memory yield improvement

With the advance of VLSI technology, the capacity and density of memories is rapidly growing. The yield improvement and testing issues have become the most critical challenges for memory manufacturing. Conventionally, redundancies are applied so that the faulty cells can be repairable. Redundancy an...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on reliability 2003-12, Vol.52 (4), p.386-399
Hauptverfasser: Huang, Chih-Tsun, Wu, Chi-Feng, Li, Jin-Fu, Wu, Cheng-Wen
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:With the advance of VLSI technology, the capacity and density of memories is rapidly growing. The yield improvement and testing issues have become the most critical challenges for memory manufacturing. Conventionally, redundancies are applied so that the faulty cells can be repairable. Redundancy analysis using external memory testers is becoming inefficient as the chip density continues to grow, especially for the system chip with large embedded memories. This paper presents three redundancy analysis algorithms which can be implemented on-chip. Among them, two are based on the local-bitmap idea: the local repair-most approach is efficient for a general spare architecture, and the local optimization approach has the best repair rate. The essential spare pivoting technique is proposed to reduce the control complexity. Furthermore, a simulator has been developed for evaluating the repair efficiency of different algorithms. It is also used for determining certain important parameters in redundancy design. The redundancy analysis circuit can easily be integrated with the built-in self-test circuit.
ISSN:0018-9529
1558-1721
DOI:10.1109/TR.2003.821925