Study on the Addressing Characteristics of an ac PDP With Sc-Doped MgO-Protecting Layer
In this paper, the addressing characteristics of an ac plasma display panel (PDP) with Sc-doped MgO-protecting layer are investigated. The characteristics of addressing voltage and temporal distribution of addressing discharge event in Sc-doped MgO panel are different from those in a conventional Mg...
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Veröffentlicht in: | IEEE transactions on plasma science 2013-08, Vol.41 (8), p.2377-2380 |
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description | In this paper, the addressing characteristics of an ac plasma display panel (PDP) with Sc-doped MgO-protecting layer are investigated. The characteristics of addressing voltage and temporal distribution of addressing discharge event in Sc-doped MgO panel are different from those in a conventional MgO panel. In particular, the characteristics depending on the operation temperature are changed drastically in Sc-doped MgO panel. The formative discharge time lag increases as the addressing pulse application time and operation temperature increase regardless of protecting layers. The statistical time lag shows the contrary trend compared to the formative discharge time lag except for the MgO when operated in room temperature. The variation of addressing voltage and temporal distribution of addressing discharge event in different protecting layers can be understood through the survey of previous research result on the exoelectron emission characteristics from protecting layers in an ac PDP. It is assumed that the emission of electrons from a protecting layer results in the decrease of wall voltage but increase of priming effect for the addressing discharge. Also, the possibility for the control of addressing characteristics is suggested by changing scan voltage level during address period. |
doi_str_mv | 10.1109/TPS.2013.2257875 |
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The characteristics of addressing voltage and temporal distribution of addressing discharge event in Sc-doped MgO panel are different from those in a conventional MgO panel. In particular, the characteristics depending on the operation temperature are changed drastically in Sc-doped MgO panel. The formative discharge time lag increases as the addressing pulse application time and operation temperature increase regardless of protecting layers. The statistical time lag shows the contrary trend compared to the formative discharge time lag except for the MgO when operated in room temperature. The variation of addressing voltage and temporal distribution of addressing discharge event in different protecting layers can be understood through the survey of previous research result on the exoelectron emission characteristics from protecting layers in an ac PDP. It is assumed that the emission of electrons from a protecting layer results in the decrease of wall voltage but increase of priming effect for the addressing discharge. Also, the possibility for the control of addressing characteristics is suggested by changing scan voltage level during address period.</description><identifier>ISSN: 0093-3813</identifier><identifier>EISSN: 1939-9375</identifier><identifier>DOI: 10.1109/TPS.2013.2257875</identifier><identifier>CODEN: ITPSBD</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Addressing characteristics ; Discharges (electric) ; Electric fields ; Electric power ; Electron emission ; Electrons ; Electrostatic discharges ; Magnesium oxide ; plasma display panel ; Plasma displays ; Plasma physics ; Sc-doped MgO-protecting layer ; temporal distribution of addressing discharge event</subject><ispartof>IEEE transactions on plasma science, 2013-08, Vol.41 (8), p.2377-2380</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Aug 2013</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-ccd0c6d58e46c9189a01a15236812e6c8abe55d804d548ffc3bf42de635930db3</citedby><cites>FETCH-LOGICAL-c291t-ccd0c6d58e46c9189a01a15236812e6c8abe55d804d548ffc3bf42de635930db3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6517288$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6517288$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kim, Joong-Kyun</creatorcontrib><title>Study on the Addressing Characteristics of an ac PDP With Sc-Doped MgO-Protecting Layer</title><title>IEEE transactions on plasma science</title><addtitle>TPS</addtitle><description>In this paper, the addressing characteristics of an ac plasma display panel (PDP) with Sc-doped MgO-protecting layer are investigated. The characteristics of addressing voltage and temporal distribution of addressing discharge event in Sc-doped MgO panel are different from those in a conventional MgO panel. In particular, the characteristics depending on the operation temperature are changed drastically in Sc-doped MgO panel. The formative discharge time lag increases as the addressing pulse application time and operation temperature increase regardless of protecting layers. The statistical time lag shows the contrary trend compared to the formative discharge time lag except for the MgO when operated in room temperature. The variation of addressing voltage and temporal distribution of addressing discharge event in different protecting layers can be understood through the survey of previous research result on the exoelectron emission characteristics from protecting layers in an ac PDP. It is assumed that the emission of electrons from a protecting layer results in the decrease of wall voltage but increase of priming effect for the addressing discharge. Also, the possibility for the control of addressing characteristics is suggested by changing scan voltage level during address period.</description><subject>Addressing characteristics</subject><subject>Discharges (electric)</subject><subject>Electric fields</subject><subject>Electric power</subject><subject>Electron emission</subject><subject>Electrons</subject><subject>Electrostatic discharges</subject><subject>Magnesium oxide</subject><subject>plasma display panel</subject><subject>Plasma displays</subject><subject>Plasma physics</subject><subject>Sc-doped MgO-protecting layer</subject><subject>temporal distribution of addressing discharge event</subject><issn>0093-3813</issn><issn>1939-9375</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEtrAjEURkNpofaxL3QT6Hps3pMsRfsCiwNaXIaY3NGRdsYmceG_74jS1d2c8104CD1QMqSUmOdFNR8yQvmQMVnqUl6gATXcFIaX8hINCDG84Jrya3ST0pYQKiRhA7Sc53044K7FeQN4FEKElJp2jccbF53PEJuUG59wV2PXYudxNanwsskbPPfFpNtBwJ_rWVHFLoPPR3PqDhDv0FXtvhPcn-8t-np9WYzfi-ns7WM8mhaeGZoL7wPxKkgNQnlDtXGEOioZV5oyUF67FUgZNBFBCl3Xnq9qwQIoLg0nYcVv0dNpdxe73z2kbLfdPrb9S0sFU1oYLVhPkRPlY5dShNruYvPj4sFSYo_5bJ_PHvPZc75eeTwpDQD840rSkmnN_wBpUWpA</recordid><startdate>20130801</startdate><enddate>20130801</enddate><creator>Kim, Joong-Kyun</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20130801</creationdate><title>Study on the Addressing Characteristics of an ac PDP With Sc-Doped MgO-Protecting Layer</title><author>Kim, Joong-Kyun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-ccd0c6d58e46c9189a01a15236812e6c8abe55d804d548ffc3bf42de635930db3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Addressing characteristics</topic><topic>Discharges (electric)</topic><topic>Electric fields</topic><topic>Electric power</topic><topic>Electron emission</topic><topic>Electrons</topic><topic>Electrostatic discharges</topic><topic>Magnesium oxide</topic><topic>plasma display panel</topic><topic>Plasma displays</topic><topic>Plasma physics</topic><topic>Sc-doped MgO-protecting layer</topic><topic>temporal distribution of addressing discharge event</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Joong-Kyun</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on plasma science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, Joong-Kyun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study on the Addressing Characteristics of an ac PDP With Sc-Doped MgO-Protecting Layer</atitle><jtitle>IEEE transactions on plasma science</jtitle><stitle>TPS</stitle><date>2013-08-01</date><risdate>2013</risdate><volume>41</volume><issue>8</issue><spage>2377</spage><epage>2380</epage><pages>2377-2380</pages><issn>0093-3813</issn><eissn>1939-9375</eissn><coden>ITPSBD</coden><abstract>In this paper, the addressing characteristics of an ac plasma display panel (PDP) with Sc-doped MgO-protecting layer are investigated. The characteristics of addressing voltage and temporal distribution of addressing discharge event in Sc-doped MgO panel are different from those in a conventional MgO panel. In particular, the characteristics depending on the operation temperature are changed drastically in Sc-doped MgO panel. The formative discharge time lag increases as the addressing pulse application time and operation temperature increase regardless of protecting layers. The statistical time lag shows the contrary trend compared to the formative discharge time lag except for the MgO when operated in room temperature. The variation of addressing voltage and temporal distribution of addressing discharge event in different protecting layers can be understood through the survey of previous research result on the exoelectron emission characteristics from protecting layers in an ac PDP. It is assumed that the emission of electrons from a protecting layer results in the decrease of wall voltage but increase of priming effect for the addressing discharge. Also, the possibility for the control of addressing characteristics is suggested by changing scan voltage level during address period.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TPS.2013.2257875</doi><tpages>4</tpages></addata></record> |
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subjects | Addressing characteristics Discharges (electric) Electric fields Electric power Electron emission Electrons Electrostatic discharges Magnesium oxide plasma display panel Plasma displays Plasma physics Sc-doped MgO-protecting layer temporal distribution of addressing discharge event |
title | Study on the Addressing Characteristics of an ac PDP With Sc-Doped MgO-Protecting Layer |
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