Study on the Addressing Characteristics of an ac PDP With Sc-Doped MgO-Protecting Layer

In this paper, the addressing characteristics of an ac plasma display panel (PDP) with Sc-doped MgO-protecting layer are investigated. The characteristics of addressing voltage and temporal distribution of addressing discharge event in Sc-doped MgO panel are different from those in a conventional Mg...

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Veröffentlicht in:IEEE transactions on plasma science 2013-08, Vol.41 (8), p.2377-2380
1. Verfasser: Kim, Joong-Kyun
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description In this paper, the addressing characteristics of an ac plasma display panel (PDP) with Sc-doped MgO-protecting layer are investigated. The characteristics of addressing voltage and temporal distribution of addressing discharge event in Sc-doped MgO panel are different from those in a conventional MgO panel. In particular, the characteristics depending on the operation temperature are changed drastically in Sc-doped MgO panel. The formative discharge time lag increases as the addressing pulse application time and operation temperature increase regardless of protecting layers. The statistical time lag shows the contrary trend compared to the formative discharge time lag except for the MgO when operated in room temperature. The variation of addressing voltage and temporal distribution of addressing discharge event in different protecting layers can be understood through the survey of previous research result on the exoelectron emission characteristics from protecting layers in an ac PDP. It is assumed that the emission of electrons from a protecting layer results in the decrease of wall voltage but increase of priming effect for the addressing discharge. Also, the possibility for the control of addressing characteristics is suggested by changing scan voltage level during address period.
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The characteristics of addressing voltage and temporal distribution of addressing discharge event in Sc-doped MgO panel are different from those in a conventional MgO panel. In particular, the characteristics depending on the operation temperature are changed drastically in Sc-doped MgO panel. The formative discharge time lag increases as the addressing pulse application time and operation temperature increase regardless of protecting layers. The statistical time lag shows the contrary trend compared to the formative discharge time lag except for the MgO when operated in room temperature. The variation of addressing voltage and temporal distribution of addressing discharge event in different protecting layers can be understood through the survey of previous research result on the exoelectron emission characteristics from protecting layers in an ac PDP. 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The characteristics of addressing voltage and temporal distribution of addressing discharge event in Sc-doped MgO panel are different from those in a conventional MgO panel. In particular, the characteristics depending on the operation temperature are changed drastically in Sc-doped MgO panel. The formative discharge time lag increases as the addressing pulse application time and operation temperature increase regardless of protecting layers. The statistical time lag shows the contrary trend compared to the formative discharge time lag except for the MgO when operated in room temperature. The variation of addressing voltage and temporal distribution of addressing discharge event in different protecting layers can be understood through the survey of previous research result on the exoelectron emission characteristics from protecting layers in an ac PDP. 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subjects Addressing characteristics
Discharges (electric)
Electric fields
Electric power
Electron emission
Electrons
Electrostatic discharges
Magnesium oxide
plasma display panel
Plasma displays
Plasma physics
Sc-doped MgO-protecting layer
temporal distribution of addressing discharge event
title Study on the Addressing Characteristics of an ac PDP With Sc-Doped MgO-Protecting Layer
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