Fatigue Crack Networks in Die-Attach Layers of IGBT Modules Under a Power Cycling Test

The die-attach layer is a vulnerable structure that is important to the reliability of an insulated-gate bipolar transistor (IGBT) module. A new failure mechanism named fatigue crack network (FCN) has been identified in the central area of the IGBT modules' solder layer. In this article, to inv...

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Veröffentlicht in:	IEEE transactions on power electronics 2024-12, Vol.39 (12), p.16695-16707
Hauptverfasser:	Liu, Shenyi, Vuorinen, Vesa, Liu, Xing, Fredrikson, Olli, Brand, Sebastian, Tiwary, Nikhilendu, Lutz, Josef, Paulasto-Krockel, Mervi
Format:	Artikel
Sprache:	eng
Schlagworte:	Die-attach fast power cycling test (PCT) fatigue crack network (FCN) Heating systems Inspection Insulated gate bipolar transistors insulated-gate bipolar transistor (IGBT) Silicon Sn-Ag-Cu (SAC) solder Stress Temperature measurement X-ray imaging
Online-Zugang:	Volltext
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