Investigation on the Degradation Mechanism for GaN Cascode Device Under Repetitive Hard-Switching Stress

The degradations of electrical parameters for depletion mode GaN devices in the cascode configuration under repetitive hard-switching stress are investigated in detail. With the help of TCAD simulations and comprehensive experimental analysis, two different mechanisms behind the degradations are dem...

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Veröffentlicht in:	IEEE transactions on power electronics 2022-05, Vol.37 (5), p.6009-6017
Hauptverfasser:	Zhang, Chi, Liu, Siyang, Li, Sheng, Ma, Yanfeng, Lu, Weihao, Huang, Jingwen, Sun, Weifeng, Yang, Zhuo, Zhu, Yuanzheng, Ni, Lihua
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Cascode configuration Cascode devices Clamps Degradation Depletion Electric fields Energy consumption Gallium nitride (GaN) HEMTs Gallium nitrides HEMTs Hot electrons Logic gates MOSFET repetitive hard-switching stress Stress Switches Switching
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