Localization and Detection of Bond Wire Faults in Multichip IGBT Power Modules
Multichip insulated gate bipolar transistor (mIGBT) power modules (PMs) degrade over power cycling. Bond wire lift-off is one of the major failure modes. This article presents a technique to diagnose bond wire lift-off by analyzing the on -state voltages across collector and emitter terminals and th...
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| Veröffentlicht in: | IEEE transactions on power electronics 2020-08, Vol.35 (8), p.7804-7815 |
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| container_title | IEEE transactions on power electronics |
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| creator | Chen, Cuili Pickert, Volker Al-Greer, Maher Jia, Chunjiang Ng, Chong |
| description | Multichip insulated gate bipolar transistor (mIGBT) power modules (PMs) degrade over power cycling. Bond wire lift-off is one of the major failure modes. This article presents a technique to diagnose bond wire lift-off by analyzing the on -state voltages across collector and emitter terminals and the voltages across collector and Kelvin emitter terminals. The proposed method can indicate the first lift-off out of 37 bond wires in a mIGBT. The main novelty of the proposed technique is that it can locate the chip that has bond wire lift-off(s). In addition, the temperature dependence of the proposed approach is negligible. The article describes the proposed technique in detail and shows results and discussions based on practical tests which are carried out on two mIGBT PMs with different packages. |
| doi_str_mv | 10.1109/TPEL.2020.2965019 |
| format | Article |
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Bond wire lift-off is one of the major failure modes. This article presents a technique to diagnose bond wire lift-off by analyzing the on -state voltages across collector and emitter terminals and the voltages across collector and Kelvin emitter terminals. The proposed method can indicate the first lift-off out of 37 bond wires in a mIGBT. The main novelty of the proposed technique is that it can locate the chip that has bond wire lift-off(s). In addition, the temperature dependence of the proposed approach is negligible. 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Bond wire lift-off is one of the major failure modes. This article presents a technique to diagnose bond wire lift-off by analyzing the on -state voltages across collector and emitter terminals and the voltages across collector and Kelvin emitter terminals. The proposed method can indicate the first lift-off out of 37 bond wires in a mIGBT. The main novelty of the proposed technique is that it can locate the chip that has bond wire lift-off(s). In addition, the temperature dependence of the proposed approach is negligible. The article describes the proposed technique in detail and shows results and discussions based on practical tests which are carried out on two mIGBT PMs with different packages.</description><subject>Bond wire lift-off</subject><subject>Copper</subject><subject>Current measurement</subject><subject>Emitters</subject><subject>Failure modes</subject><subject>Fault detection</subject><subject>fault diagnosis</subject><subject>Insulated gate bipolar transistors</subject><subject>Kelvin</subject><subject>Lift</subject><subject>Modules</subject><subject>multichip insulated gate bipolar transistor (mIGBT)</subject><subject>Semiconductor devices</subject><subject>Sensors</subject><subject>Temperature dependence</subject><subject>Terminals</subject><subject>Voltage measurement</subject><subject>Wire</subject><subject>Wires</subject><issn>0885-8993</issn><issn>1941-0107</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1PwjAYgBujiYj-AOOliedh35at7VEQkGQoB4zHZnZtLJkrtluM_nqLEE_vR573Iw9C10BGAETebdazckQJJSMqi5yAPEEDkGPICBB-igZEiDwTUrJzdBHjlhAYJ2qAnkqvq8b9VJ3zLa7aGj-Yzui_yls88anz6oLB86pvuohdi1cpcfrd7fByMdngtf8yAa983TcmXqIzWzXRXB3jEL3MZ5vpY1Y-L5bT-zLTjBVdZnJtgQEtbC2rN8msEbbWFGrI6zqXJn0nqBgTSTjjDGReMG64sEwzYQmVbIhuD3t3wX_2JnZq6_vQppOKMsm4KCiQRMGB0sHHGIxVu-A-qvCtgKi9NrXXpvba1FFbmrk5zDhjzD8vZE45B_YL0vFm-w</recordid><startdate>20200801</startdate><enddate>20200801</enddate><creator>Chen, Cuili</creator><creator>Pickert, Volker</creator><creator>Al-Greer, Maher</creator><creator>Jia, Chunjiang</creator><creator>Ng, Chong</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Bond wire lift-off is one of the major failure modes. This article presents a technique to diagnose bond wire lift-off by analyzing the on -state voltages across collector and emitter terminals and the voltages across collector and Kelvin emitter terminals. The proposed method can indicate the first lift-off out of 37 bond wires in a mIGBT. The main novelty of the proposed technique is that it can locate the chip that has bond wire lift-off(s). In addition, the temperature dependence of the proposed approach is negligible. 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| source | IEEE Electronic Library (IEL) |
| subjects | Bond wire lift-off Copper Current measurement Emitters Failure modes Fault detection fault diagnosis Insulated gate bipolar transistors Kelvin Lift Modules multichip insulated gate bipolar transistor (mIGBT) Semiconductor devices Sensors Temperature dependence Terminals Voltage measurement Wire Wires |
| title | Localization and Detection of Bond Wire Faults in Multichip IGBT Power Modules |
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