Accurate Extraction Method of Reverse Recovery Time and Stored Charge for Ultrafast Diodes

This letter presents a novel extraction method to accurately determine a reverse recovery time and a stored charge for ultrafast diodes. To obtain this, a test circuit to measure those parameters was accurately modeled by considering an inductance and a parasitic resistance, which are inherently emb...

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Veröffentlicht in:	IEEE transactions on power electronics 2012-02, Vol.27 (2), p.619-622
Hauptverfasser:	Kang, I. H., Kim, S. C., Bahng, W., Joo, S. J., Kim, N. K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuits Current measurement Diodes Electrical engineering. Electrical power engineering Electronics Exact sciences and technology Extraction processes Fast recovery diodes (FRDs) Inductance Measurement parasitic components reverse recovery time t_{\rm rr} Schottky barrier diodes (SBDs) Semiconductor device measurement Semiconductor diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Silicon carbide stored charge Q_{\rm rr} Test systems Testing, measurement, noise and reliability Testing. Reliability. Quality control Time measurement
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