Estimation and Measurement of Junction Temperatures in a Three-Level Voltage Source Converter
The design of a power converter must guarantee that the operating junction temperatures thetav j of all devices do not exceed their limits under all specified operating conditions. Usually, this is ensured by a simulative or analytical junction temperature estimation based on simple electrical and t...
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Veröffentlicht in: | IEEE transactions on power electronics 2007-01, Vol.22 (1), p.3-12 |
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description | The design of a power converter must guarantee that the operating junction temperatures thetav j of all devices do not exceed their limits under all specified operating conditions. Usually, this is ensured by a simulative or analytical junction temperature estimation based on simple electrical and thermal models and semiconductor datasheet values. This paper discusses the difficulties and quantifies the limitations of this approach on the example of a three-level neutral point clamped voltage source converter (NPC VSC) with insulated gate bipolar transistors. The calculations are compared to the results of direct junction temperature measurements with an infrared camera. The paper also provides the experimental proof for the unequal loss and junction temperature distribution in the three-level NPC VSC |
doi_str_mv | 10.1109/TPEL.2006.886651 |
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The paper also provides the experimental proof for the unequal loss and junction temperature distribution in the three-level NPC VSC</description><subject>Analytical models</subject><subject>Circuit testing</subject><subject>Converters</subject><subject>Design of experiments</subject><subject>Devices</subject><subject>Electric potential</subject><subject>Electric variables measurement</subject><subject>Electrical engineering</subject><subject>Electrical junctions</subject><subject>Electronic equipment testing</subject><subject>Electronics</subject><subject>Insulated gate bipolar transistors</subject><subject>Insulated gate bipolar transistors (IGBT)</subject><subject>Junction temperature measurement</subject><subject>neutral point clamped voltage source converter (NPC VSC)</subject><subject>Parameter estimation</subject><subject>Power conversion</subject><subject>Power supply</subject><subject>Semiconductors</subject><subject>Temperature distribution</subject><subject>Temperature measurement</subject><subject>thermal modeling</subject><subject>Voltage</subject><issn>0885-8993</issn><issn>1941-0107</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp90U1PGzEQBmCrAqkBeq_Ui9VDy2XDjL_iPVZRyoeCQGrgVlmOd7Ys2uym9i4S_74OQT1w4DSHeWakmZexzwhTRCjPVreL5VQAmKm1xmj8wCZYKiwAYXbAJmCtLmxZyo_sKKVHAFQacMJ-L9LQbPzQ9B33XcWvyacx0oa6gfc1vxq78NJb0WZL0Q-5l3iTLV89RKJiSU_U8vu-Hfwf4r_6MQbi8757ojhQPGGHtW8TfXqtx-zu52I1vyiWN-eX8x_LIkhrhkKrmnQlvBdYlQHqoDB4NJWulV_DulqD9F6CplBipTUqZWSmAdcgSluRPGbf93u3sf87UhrcpkmB2tZ31I_JlSCNAg0yy2_vSqnUzAphMzx9F6KZoUQjrMr06xv6mP_Q5YOdAGOsnEmREexRiH1KkWq3jfnx8dkhuF2Cbpeg2yXo9gnmkS_7kYaI_vN8h5A5yH-7Qpbc</recordid><startdate>200701</startdate><enddate>200701</enddate><creator>Bruckner, T.</creator><creator>Bernet, S.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Usually, this is ensured by a simulative or analytical junction temperature estimation based on simple electrical and thermal models and semiconductor datasheet values. This paper discusses the difficulties and quantifies the limitations of this approach on the example of a three-level neutral point clamped voltage source converter (NPC VSC) with insulated gate bipolar transistors. The calculations are compared to the results of direct junction temperature measurements with an infrared camera. The paper also provides the experimental proof for the unequal loss and junction temperature distribution in the three-level NPC VSC</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TPEL.2006.886651</doi><tpages>10</tpages></addata></record> |
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subjects | Analytical models Circuit testing Converters Design of experiments Devices Electric potential Electric variables measurement Electrical engineering Electrical junctions Electronic equipment testing Electronics Insulated gate bipolar transistors Insulated gate bipolar transistors (IGBT) Junction temperature measurement neutral point clamped voltage source converter (NPC VSC) Parameter estimation Power conversion Power supply Semiconductors Temperature distribution Temperature measurement thermal modeling Voltage |
title | Estimation and Measurement of Junction Temperatures in a Three-Level Voltage Source Converter |
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