Impact of Irradiation Side on Muon-Induced Single Event Upsets in 65-nm Bulk SRAMs
We have newly analyzed negative and positive muon-induced single event upset (SEU) data in irradiation tests from the package side (PS) of 65-nm bulk static random access memory (SRAM) and compared with previous results of irradiation tests from the board side (BS). The peak SEU cross section is at...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2024-04, Vol.71 (4), p.1-1 |
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| creator | Deng, Yifan Watanabe, Yukinobu Manabe, Seiya Liao, Wang Hashimoto, Masanori Abe, Shin-Ichiro Tampo, Motonobu Miyake, Yasuhiro |
| description | We have newly analyzed negative and positive muon-induced single event upset (SEU) data in irradiation tests from the package side (PS) of 65-nm bulk static random access memory (SRAM) and compared with previous results of irradiation tests from the board side (BS). The peak SEU cross section is at 28 MeV/c for PS irradiation, which differs from 38 MeV/c for BS irradiation. The magnitude of the peak SEU cross section for PS irradiation is approximately twice that of BS irradiation for both positive and negative muons. Through simulations using Geant4, we explain the difference quantitatively. This simulation also reproduces the experimental SEU cross sections for tilted incidence of the muon beam onto the device board. The soft error rates (SERs) are estimated under a realistic environment considering the zenith angle distribution of muon flux. As a result, it was found that the estimated SERs were not significantly different from the case without zenith angle distribution. This result indicates that experimental data from irradiation tests in which the device board is placed perpendicular to the incident beam are expected to be useful for estimating muon-induced SERs in terrestrial environments. |
| doi_str_mv | 10.1109/TNS.2024.3378216 |
| format | Article |
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The peak SEU cross section is at 28 MeV/c for PS irradiation, which differs from 38 MeV/c for BS irradiation. The magnitude of the peak SEU cross section for PS irradiation is approximately twice that of BS irradiation for both positive and negative muons. Through simulations using Geant4, we explain the difference quantitatively. This simulation also reproduces the experimental SEU cross sections for tilted incidence of the muon beam onto the device board. The soft error rates (SERs) are estimated under a realistic environment considering the zenith angle distribution of muon flux. As a result, it was found that the estimated SERs were not significantly different from the case without zenith angle distribution. This result indicates that experimental data from irradiation tests in which the device board is placed perpendicular to the incident beam are expected to be useful for estimating muon-induced SERs in terrestrial environments.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2024.3378216</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Accelerated testing ; Cross-sections ; Geant4 ; Irradiation ; Irradiation side ; Mesons ; Monte Carlo methods ; Monte Carlo simulation ; Muons ; Negative and positive muons ; Particle beams ; Radiation ; Radiation effects ; Single event upset ; Single event upsets ; Soft error rate ; Soft errors ; SRAM chips ; SRAMs ; Static random access memory ; Telescopes ; Terrestrial environments ; Zenith</subject><ispartof>IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.1-1</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c245t-cf6dbfd2a1ea640abcb089c7133f6dea62a56adb42b2de15d1b9868a48cafe863</cites><orcidid>0000-0003-0187-5880 ; 0000-0002-0377-2108 ; 0000-0003-4438-0095 ; 0000-0003-2134-5588 ; 0000-0002-5935-5450 ; 0000-0003-0095-0447</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10474031$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10474031$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Deng, Yifan</creatorcontrib><creatorcontrib>Watanabe, Yukinobu</creatorcontrib><creatorcontrib>Manabe, Seiya</creatorcontrib><creatorcontrib>Liao, Wang</creatorcontrib><creatorcontrib>Hashimoto, Masanori</creatorcontrib><creatorcontrib>Abe, Shin-Ichiro</creatorcontrib><creatorcontrib>Tampo, Motonobu</creatorcontrib><creatorcontrib>Miyake, Yasuhiro</creatorcontrib><title>Impact of Irradiation Side on Muon-Induced Single Event Upsets in 65-nm Bulk SRAMs</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>We have newly analyzed negative and positive muon-induced single event upset (SEU) data in irradiation tests from the package side (PS) of 65-nm bulk static random access memory (SRAM) and compared with previous results of irradiation tests from the board side (BS). The peak SEU cross section is at 28 MeV/c for PS irradiation, which differs from 38 MeV/c for BS irradiation. The magnitude of the peak SEU cross section for PS irradiation is approximately twice that of BS irradiation for both positive and negative muons. Through simulations using Geant4, we explain the difference quantitatively. This simulation also reproduces the experimental SEU cross sections for tilted incidence of the muon beam onto the device board. The soft error rates (SERs) are estimated under a realistic environment considering the zenith angle distribution of muon flux. As a result, it was found that the estimated SERs were not significantly different from the case without zenith angle distribution. This result indicates that experimental data from irradiation tests in which the device board is placed perpendicular to the incident beam are expected to be useful for estimating muon-induced SERs in terrestrial environments.</description><subject>Accelerated testing</subject><subject>Cross-sections</subject><subject>Geant4</subject><subject>Irradiation</subject><subject>Irradiation side</subject><subject>Mesons</subject><subject>Monte Carlo methods</subject><subject>Monte Carlo simulation</subject><subject>Muons</subject><subject>Negative and positive muons</subject><subject>Particle beams</subject><subject>Radiation</subject><subject>Radiation effects</subject><subject>Single event upset</subject><subject>Single event upsets</subject><subject>Soft error rate</subject><subject>Soft errors</subject><subject>SRAM chips</subject><subject>SRAMs</subject><subject>Static random access memory</subject><subject>Telescopes</subject><subject>Terrestrial environments</subject><subject>Zenith</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkEtPwzAQhC0EEqVw58DBEucUv-McS1UgUgtSH2fLsR2U0jrBTpD497hqD5xGOzuzK30A3GM0wRgVT5v39YQgwiaU5pJgcQFGmHOZYZ7LSzBCCMusYEVxDW5i3KWRccRHYFUeOm162NawDEHbRvdN6-G6sQ4mXQ6tz0pvB-NsMv3n3sH5j_M93HbR9RE2Hgqe-QN8HvZfcL2aLuMtuKr1Prq7s47B9mW-mb1li4_XcjZdZIYw3memFraqLdHYacGQrkyFZGFyTGnaJI9oLrStGKmIdZhbXBVSSM2k0bWTgo7B4-luF9rvwcVe7doh-PRSUcQwxwIjklLolDKhjTG4WnWhOejwqzBSR3IqkVNHcupMLlUeTpXGOfcvznKGKKZ_pvFpHw</recordid><startdate>20240401</startdate><enddate>20240401</enddate><creator>Deng, Yifan</creator><creator>Watanabe, Yukinobu</creator><creator>Manabe, Seiya</creator><creator>Liao, Wang</creator><creator>Hashimoto, Masanori</creator><creator>Abe, Shin-Ichiro</creator><creator>Tampo, Motonobu</creator><creator>Miyake, Yasuhiro</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Watanabe, Yukinobu ; Manabe, Seiya ; Liao, Wang ; Hashimoto, Masanori ; Abe, Shin-Ichiro ; Tampo, Motonobu ; Miyake, Yasuhiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c245t-cf6dbfd2a1ea640abcb089c7133f6dea62a56adb42b2de15d1b9868a48cafe863</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Accelerated testing</topic><topic>Cross-sections</topic><topic>Geant4</topic><topic>Irradiation</topic><topic>Irradiation side</topic><topic>Mesons</topic><topic>Monte Carlo methods</topic><topic>Monte Carlo simulation</topic><topic>Muons</topic><topic>Negative and positive muons</topic><topic>Particle beams</topic><topic>Radiation</topic><topic>Radiation effects</topic><topic>Single event upset</topic><topic>Single event upsets</topic><topic>Soft error rate</topic><topic>Soft errors</topic><topic>SRAM chips</topic><topic>SRAMs</topic><topic>Static random access memory</topic><topic>Telescopes</topic><topic>Terrestrial environments</topic><topic>Zenith</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Deng, Yifan</creatorcontrib><creatorcontrib>Watanabe, Yukinobu</creatorcontrib><creatorcontrib>Manabe, Seiya</creatorcontrib><creatorcontrib>Liao, Wang</creatorcontrib><creatorcontrib>Hashimoto, Masanori</creatorcontrib><creatorcontrib>Abe, Shin-Ichiro</creatorcontrib><creatorcontrib>Tampo, Motonobu</creatorcontrib><creatorcontrib>Miyake, Yasuhiro</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Industrial and Applied Microbiology Abstracts (Microbiology A)</collection><collection>Materials Business File</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Virology and AIDS Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>AIDS and Cancer Research Abstracts</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Algology Mycology and Protozoology Abstracts (Microbiology C)</collection><collection>Biotechnology and BioEngineering Abstracts</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Deng, Yifan</au><au>Watanabe, Yukinobu</au><au>Manabe, Seiya</au><au>Liao, Wang</au><au>Hashimoto, Masanori</au><au>Abe, Shin-Ichiro</au><au>Tampo, Motonobu</au><au>Miyake, Yasuhiro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Impact of Irradiation Side on Muon-Induced Single Event Upsets in 65-nm Bulk SRAMs</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2024-04-01</date><risdate>2024</risdate><volume>71</volume><issue>4</issue><spage>1</spage><epage>1</epage><pages>1-1</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>We have newly analyzed negative and positive muon-induced single event upset (SEU) data in irradiation tests from the package side (PS) of 65-nm bulk static random access memory (SRAM) and compared with previous results of irradiation tests from the board side (BS). The peak SEU cross section is at 28 MeV/c for PS irradiation, which differs from 38 MeV/c for BS irradiation. The magnitude of the peak SEU cross section for PS irradiation is approximately twice that of BS irradiation for both positive and negative muons. Through simulations using Geant4, we explain the difference quantitatively. This simulation also reproduces the experimental SEU cross sections for tilted incidence of the muon beam onto the device board. The soft error rates (SERs) are estimated under a realistic environment considering the zenith angle distribution of muon flux. As a result, it was found that the estimated SERs were not significantly different from the case without zenith angle distribution. This result indicates that experimental data from irradiation tests in which the device board is placed perpendicular to the incident beam are expected to be useful for estimating muon-induced SERs in terrestrial environments.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2024.3378216</doi><tpages>1</tpages><orcidid>https://orcid.org/0000-0003-0187-5880</orcidid><orcidid>https://orcid.org/0000-0002-0377-2108</orcidid><orcidid>https://orcid.org/0000-0003-4438-0095</orcidid><orcidid>https://orcid.org/0000-0003-2134-5588</orcidid><orcidid>https://orcid.org/0000-0002-5935-5450</orcidid><orcidid>https://orcid.org/0000-0003-0095-0447</orcidid></addata></record> |
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| subjects | Accelerated testing Cross-sections Geant4 Irradiation Irradiation side Mesons Monte Carlo methods Monte Carlo simulation Muons Negative and positive muons Particle beams Radiation Radiation effects Single event upset Single event upsets Soft error rate Soft errors SRAM chips SRAMs Static random access memory Telescopes Terrestrial environments Zenith |
| title | Impact of Irradiation Side on Muon-Induced Single Event Upsets in 65-nm Bulk SRAMs |
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