Online Dark Count Rate Measurements in 150 nm CMOS SPADs Exposed to Low Neutron Fluxes

Arrays of single photon avalanche diodes (SPADs) fabricated in a 150 nm CMOS technology have been exposed to neutrons up to fluences of about 4.3 \times 10^{10}~1 MeV neutron equivalent cm ^{-2} , with fluxes around 3 \times 10^{6}~1 MeV neutron equivalent cm ^{-2}\text{s}^{-1} . Dark count rate...

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