Defect and Impurity-Center Activation and Passivation in Irradiated AlGaN/GaN HEMTs

Donor-like defects are activated and acceptor-like defects are passivated when commercial AlGaN/GaN high electron mobility transistors (HEMTs) are irradiated with 10-keV X-rays or 1.8-MeV protons at low fluence. Displacement-damage-induced creation of acceptor-like defects is observed at higher prot...

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Veröffentlicht in:	IEEE transactions on nuclear science 2024-01, Vol.71 (1), p.80-87
Hauptverfasser:	Li, X., Wang, P. F., Zhao, X., Qiu, H., Gorchichko, M., McCurdy, M. W., Schrimpf, R. D., Zhang, E. X., Fleetwood, D. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Aluminum gallium nitrides Defects Dehydrogenation displacement damage Fluence Gallium nitride Gallium nitrides GaN HEMTs high electron mobility transistor (HEMT) High electron mobility transistors Impurities LF noise low-frequency (LF) noise Low-frequency noise Passivation Protons Radiation effects Semiconductor devices Substitutional impurities Total ionizing dose
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