Measurement of Single-Event Upsets in 65-nm SRAMs Under Irradiation of Spallation Neutrons at J-PARC MLF
A neutron irradiation test of static random access memories (SRAMs) was performed using a spallation neutron source at Materials and Life Science Experimental Facility (MLF) in the Japan Proton Accelerator Research Complex (J-PARC). The probability of neutron-induced single-event upsets (SEUs) was m...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2020-07, Vol.67 (7), p.1599-1605 |
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| creator | Kuroda, Junya Manabe, Seiya Watanabe, Yukinobu Ito, Kojiro Liao, Wang Hashimoto, Masanori Abe, Shin-ichiro Harada, Masahide Oikawa, Kenichi Miyake, Yasuhiro |
| description | A neutron irradiation test of static random access memories (SRAMs) was performed using a spallation neutron source at Materials and Life Science Experimental Facility (MLF) in the Japan Proton Accelerator Research Complex (J-PARC). The probability of neutron-induced single-event upsets (SEUs) was measured for 65-nm bulk and silicon on thin buried oxide (SOTB) SRAMs under neutron irradiation at the BL10 experimental facility. The measured SEU data were compared with the previous data of the same SRAMs which were measured at other irradiation facilities having different neutron spectra. The differences in the operating voltage dependence of the measured SEU probabilities are discussed with particular attention to the impact of irradiation side on SEUs. The particle and heavy ion transport code system (PHITS) simulation based on the simple sensitive volume model qualitatively reproduced the operating voltage dependence seen in the measured ratio of SEUs for the Bulk SRAM between the resin side and board side irradiations under different neutron fields. |
| doi_str_mv | 10.1109/TNS.2020.2978257 |
| format | Article |
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The probability of neutron-induced single-event upsets (SEUs) was measured for 65-nm bulk and silicon on thin buried oxide (SOTB) SRAMs under neutron irradiation at the BL10 experimental facility. The measured SEU data were compared with the previous data of the same SRAMs which were measured at other irradiation facilities having different neutron spectra. The differences in the operating voltage dependence of the measured SEU probabilities are discussed with particular attention to the impact of irradiation side on SEUs. The particle and heavy ion transport code system (PHITS) simulation based on the simple sensitive volume model qualitatively reproduced the operating voltage dependence seen in the measured ratio of SEUs for the Bulk SRAM between the resin side and board side irradiations under different neutron fields.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2020.2978257</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>65-nm bulk and silicon on thin buried oxide (SOTB) static random access memories (SRAMs) ; Computer simulation ; Dependence ; Electric potential ; Electronic mail ; Heavy ions ; Ion transport ; Irradiation ; irradiation test ; Japan Proton Accelerator Research Complex (J-PARC) Materials and Life Science Experimental Facility (MLF) ; neutron ; Neutron irradiation ; Neutron spectra ; Neutrons ; particle and heavy ion transport code system (PHITS) simulation ; Proton accelerators ; Radiation effects ; Random access memory ; Resins ; Semiconductor device measurement ; Single event upsets ; single-event upset (SEU) ; Spallation ; Static random access memory ; Voltage ; Voltage measurement</subject><ispartof>IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1599-1605</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-7ff4c015e34bcf797147607bc5112de72a72e5a8838d76308e17137a11b8482e3</citedby><cites>FETCH-LOGICAL-c291t-7ff4c015e34bcf797147607bc5112de72a72e5a8838d76308e17137a11b8482e3</cites><orcidid>0000-0003-2134-5588 ; 0000-0002-5935-5450 ; 0000-0003-4913-626X ; 0000-0002-4157-9798 ; 0000-0003-4265-7089 ; 0000-0003-0187-5880 ; 0000-0002-0377-2108</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9024135$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9024135$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kuroda, Junya</creatorcontrib><creatorcontrib>Manabe, Seiya</creatorcontrib><creatorcontrib>Watanabe, Yukinobu</creatorcontrib><creatorcontrib>Ito, Kojiro</creatorcontrib><creatorcontrib>Liao, Wang</creatorcontrib><creatorcontrib>Hashimoto, Masanori</creatorcontrib><creatorcontrib>Abe, Shin-ichiro</creatorcontrib><creatorcontrib>Harada, Masahide</creatorcontrib><creatorcontrib>Oikawa, Kenichi</creatorcontrib><creatorcontrib>Miyake, Yasuhiro</creatorcontrib><title>Measurement of Single-Event Upsets in 65-nm SRAMs Under Irradiation of Spallation Neutrons at J-PARC MLF</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>A neutron irradiation test of static random access memories (SRAMs) was performed using a spallation neutron source at Materials and Life Science Experimental Facility (MLF) in the Japan Proton Accelerator Research Complex (J-PARC). The probability of neutron-induced single-event upsets (SEUs) was measured for 65-nm bulk and silicon on thin buried oxide (SOTB) SRAMs under neutron irradiation at the BL10 experimental facility. The measured SEU data were compared with the previous data of the same SRAMs which were measured at other irradiation facilities having different neutron spectra. The differences in the operating voltage dependence of the measured SEU probabilities are discussed with particular attention to the impact of irradiation side on SEUs. The particle and heavy ion transport code system (PHITS) simulation based on the simple sensitive volume model qualitatively reproduced the operating voltage dependence seen in the measured ratio of SEUs for the Bulk SRAM between the resin side and board side irradiations under different neutron fields.</description><subject>65-nm bulk and silicon on thin buried oxide (SOTB) static random access memories (SRAMs)</subject><subject>Computer simulation</subject><subject>Dependence</subject><subject>Electric potential</subject><subject>Electronic mail</subject><subject>Heavy ions</subject><subject>Ion transport</subject><subject>Irradiation</subject><subject>irradiation test</subject><subject>Japan Proton Accelerator Research Complex (J-PARC) Materials and Life Science Experimental Facility (MLF)</subject><subject>neutron</subject><subject>Neutron irradiation</subject><subject>Neutron spectra</subject><subject>Neutrons</subject><subject>particle and heavy ion transport code system (PHITS) simulation</subject><subject>Proton accelerators</subject><subject>Radiation effects</subject><subject>Random access memory</subject><subject>Resins</subject><subject>Semiconductor device measurement</subject><subject>Single event upsets</subject><subject>single-event upset (SEU)</subject><subject>Spallation</subject><subject>Static random access memory</subject><subject>Voltage</subject><subject>Voltage measurement</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kN9LwzAUhYMoOKfvgi8Bnztz06RJHsfYdLJN2Y_nkrW32tG1NWkF_3s7O3y6HDjfufARcg9sBMDM03a1GXHG2YgbpblUF2QAUuoApNKXZMAY6MAIY67JjfeHLgrJ5IB8LtH61uERy4ZWGd3k5UeBwfT7lHe1x8bTvKSRDMoj3azHS093ZYqOzp2zaW6bvCr_uNoWRZ9W2DauKj21DX0N3sfrCV0uZrfkKrOFx7vzHZLdbLqdvASLt-f5ZLwIEm6gCVSWiYSBxFDsk0wZBUJFTO0TCcBTVNwqjtJqHepURSHTCApCZQH2WmiO4ZA89ru1q75a9E18qFpXdi9jLriMgAsjuxbrW4mrvHeYxbXLj9b9xMDik8-48xmffMZnnx3y0CM5Iv7XDeMCQhn-Ap8uboA</recordid><startdate>20200701</startdate><enddate>20200701</enddate><creator>Kuroda, Junya</creator><creator>Manabe, Seiya</creator><creator>Watanabe, Yukinobu</creator><creator>Ito, Kojiro</creator><creator>Liao, Wang</creator><creator>Hashimoto, Masanori</creator><creator>Abe, Shin-ichiro</creator><creator>Harada, Masahide</creator><creator>Oikawa, Kenichi</creator><creator>Miyake, Yasuhiro</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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of Single-Event Upsets in 65-nm SRAMs Under Irradiation of Spallation Neutrons at J-PARC MLF</title><author>Kuroda, Junya ; Manabe, Seiya ; Watanabe, Yukinobu ; Ito, Kojiro ; Liao, Wang ; Hashimoto, Masanori ; Abe, Shin-ichiro ; Harada, Masahide ; Oikawa, Kenichi ; Miyake, Yasuhiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-7ff4c015e34bcf797147607bc5112de72a72e5a8838d76308e17137a11b8482e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>65-nm bulk and silicon on thin buried oxide (SOTB) static random access memories (SRAMs)</topic><topic>Computer simulation</topic><topic>Dependence</topic><topic>Electric potential</topic><topic>Electronic mail</topic><topic>Heavy ions</topic><topic>Ion transport</topic><topic>Irradiation</topic><topic>irradiation test</topic><topic>Japan Proton Accelerator Research Complex (J-PARC) Materials and Life Science Experimental Facility (MLF)</topic><topic>neutron</topic><topic>Neutron irradiation</topic><topic>Neutron spectra</topic><topic>Neutrons</topic><topic>particle and heavy ion transport code system (PHITS) simulation</topic><topic>Proton accelerators</topic><topic>Radiation effects</topic><topic>Random access memory</topic><topic>Resins</topic><topic>Semiconductor device measurement</topic><topic>Single event upsets</topic><topic>single-event upset (SEU)</topic><topic>Spallation</topic><topic>Static random access memory</topic><topic>Voltage</topic><topic>Voltage measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kuroda, Junya</creatorcontrib><creatorcontrib>Manabe, Seiya</creatorcontrib><creatorcontrib>Watanabe, Yukinobu</creatorcontrib><creatorcontrib>Ito, Kojiro</creatorcontrib><creatorcontrib>Liao, Wang</creatorcontrib><creatorcontrib>Hashimoto, Masanori</creatorcontrib><creatorcontrib>Abe, Shin-ichiro</creatorcontrib><creatorcontrib>Harada, 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Abstracts</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kuroda, Junya</au><au>Manabe, Seiya</au><au>Watanabe, Yukinobu</au><au>Ito, Kojiro</au><au>Liao, Wang</au><au>Hashimoto, Masanori</au><au>Abe, Shin-ichiro</au><au>Harada, Masahide</au><au>Oikawa, Kenichi</au><au>Miyake, Yasuhiro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Measurement of Single-Event Upsets in 65-nm SRAMs Under Irradiation of Spallation Neutrons at J-PARC MLF</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2020-07-01</date><risdate>2020</risdate><volume>67</volume><issue>7</issue><spage>1599</spage><epage>1605</epage><pages>1599-1605</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>A neutron irradiation test of static random access memories (SRAMs) was performed using a spallation neutron source at Materials and Life Science Experimental Facility (MLF) in the Japan Proton Accelerator Research Complex (J-PARC). The probability of neutron-induced single-event upsets (SEUs) was measured for 65-nm bulk and silicon on thin buried oxide (SOTB) SRAMs under neutron irradiation at the BL10 experimental facility. The measured SEU data were compared with the previous data of the same SRAMs which were measured at other irradiation facilities having different neutron spectra. The differences in the operating voltage dependence of the measured SEU probabilities are discussed with particular attention to the impact of irradiation side on SEUs. The particle and heavy ion transport code system (PHITS) simulation based on the simple sensitive volume model qualitatively reproduced the operating voltage dependence seen in the measured ratio of SEUs for the Bulk SRAM between the resin side and board side irradiations under different neutron fields.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2020.2978257</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0003-2134-5588</orcidid><orcidid>https://orcid.org/0000-0002-5935-5450</orcidid><orcidid>https://orcid.org/0000-0003-4913-626X</orcidid><orcidid>https://orcid.org/0000-0002-4157-9798</orcidid><orcidid>https://orcid.org/0000-0003-4265-7089</orcidid><orcidid>https://orcid.org/0000-0003-0187-5880</orcidid><orcidid>https://orcid.org/0000-0002-0377-2108</orcidid></addata></record> |
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| subjects | 65-nm bulk and silicon on thin buried oxide (SOTB) static random access memories (SRAMs) Computer simulation Dependence Electric potential Electronic mail Heavy ions Ion transport Irradiation irradiation test Japan Proton Accelerator Research Complex (J-PARC) Materials and Life Science Experimental Facility (MLF) neutron Neutron irradiation Neutron spectra Neutrons particle and heavy ion transport code system (PHITS) simulation Proton accelerators Radiation effects Random access memory Resins Semiconductor device measurement Single event upsets single-event upset (SEU) Spallation Static random access memory Voltage Voltage measurement |
| title | Measurement of Single-Event Upsets in 65-nm SRAMs Under Irradiation of Spallation Neutrons at J-PARC MLF |
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