Single-Event Latch-Up: Increased Sensitivity From Planar to FinFET

Increased sensitivity of FinFET technology to single-event latch-up (SEL) was found during 64-MeV proton beam accelerated testing and confirmed with neutron beam experiments. TCAD simulations demonstrate that the 3\times shallower trench isolation in FinFET technology significantly increases both...

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Veröffentlicht in:	IEEE transactions on nuclear science 2018-01, Vol.65 (1), p.217-222
Hauptverfasser:	Karp, James, Hart, Michael J., Maillard, Pierre, Hellings, Geert, Linten, Dimitri
Format:	Artikel
Sprache:	eng
Schlagworte:	Accelerated tests CMOS Field-programmable gate array (FPGA) FinFET FinFETs Latch-up neutron Neutron beams Neutrons Parameter sensitivity Proton beams Protons Semiconductor process modeling Sensitivity shallow trench isolation (STI) single-event latch-up (SEL) TCAD Technology Temperature sensors Testing
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