Electrically Active Defects in Neutron-Irradiated HPSI 4H-SiC X-Ray Detectors Investigated by ZB-TSC Technique

Electrically active defects in high-purity semi-insulating (HPSI) 4H-silicon carbide (4H-SiC) X-ray detectors have been characterized before and after neutron irradiation by zero-bias thermally stimulated current (ZB-TSC) and high-temperature resistivity measurements. The ZB-TSC measurements prior t...

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Veröffentlicht in:	IEEE transactions on nuclear science 2017-08, Vol.64 (8), p.2377-2385
Hauptverfasser:	Raja, P. Vigneshwara, Narasimha Murty, N. V. L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Activation energy Defects Detectors Electrical resistivity Electron traps Fluence Heating systems High temperature high-purity semi-insulating (HPSI) 4H-silicon carbide (4H-SiC) Hole traps Irradiation Neutron irradiation Neutrons radiation damage Radiation effects Sensors Silicon carbide Spectral sensitivity Substrates Temperature measurement Thermally stimulated current thermally stimulated current (TSC) Traps X ray detectors X ray spectra X-ray detector
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