Degradation Characteristics of Normally-Off p-AlGaN Gate AlGaN/GaN HEMTs With 5 MeV Proton Irradiation

Proton irradiation at 5 MeV was performed on normally-off p-AlGaN gate AlGaN/GaN high electron mobility transistors (HEMTs). The increase of on-resistance and the degradation of subthreshold characteristics were observed after irradiation. The reduction of on-current was induced by displacement dama...

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Veröffentlicht in:	IEEE transactions on nuclear science 2017-01, Vol.64 (1), p.258-262
Hauptverfasser:	Keum, Dong Min, Sung, Hyuk-kee, Kim, Hyungtak
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN/GaN Aluminum gallium nitride Aluminum gallium nitrides Degradation displacement damage Gallium nitrides HEMTs high electron mobility transistors hole Irradiation Logic gates MODFETs normally-off p-AlGaN proton Protons Radiation Radiation effects Simulation Wide band gap semiconductors
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