Changes in the Electrical Parameters of CdTe-based Crystals During Isothermal Annealing

We observed a novel unanticipated effect in CdTe, Cd 1-x Zn x Te and Cd 1-x Mn x Te crystals whilst we were measuring the dependences of several electrical properties (e.g., specific conductivity and free-carrier density) over time. During isothermal annealing under constant thermodynamic conditions...

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Veröffentlicht in:	IEEE transactions on nuclear science 2015-06, Vol.62 (3), p.1239-1243
Hauptverfasser:	Fochuk, P., Nakonechnyi, I., Panchuk, O., Kopach, O., Nykonyuk, Y., Grill, R., Belas, E., Kim, K. H., Bolotnikov, A. E., Yang, G., James, R. B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Cadmium compounds component overpressure Conductivity Crystals II-VI semiconductor materials Impurities inclusions Temperature measurement {\bf Cd}_{0.9}{\bf Zn}_{0.1}{\bf Te}
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