Changes in the Electrical Parameters of CdTe-based Crystals During Isothermal Annealing
We observed a novel unanticipated effect in CdTe, Cd 1-x Zn x Te and Cd 1-x Mn x Te crystals whilst we were measuring the dependences of several electrical properties (e.g., specific conductivity and free-carrier density) over time. During isothermal annealing under constant thermodynamic conditions...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2015-06, Vol.62 (3), p.1239-1243 |
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| creator | Fochuk, P. Nakonechnyi, I. Panchuk, O. Kopach, O. Nykonyuk, Y. Grill, R. Belas, E. Kim, K. H. Bolotnikov, A. E. Yang, G. James, R. B. |
| description | We observed a novel unanticipated effect in CdTe, Cd 1-x Zn x Te and Cd 1-x Mn x Te crystals whilst we were measuring the dependences of several electrical properties (e.g., specific conductivity and free-carrier density) over time. During isothermal annealing under constant thermodynamic conditions (temperatures of 450- 500 ° C and under maximal cadmium-vapor pressure), we recorded a jump-like increase in the conductivity after some ~ 1 - 2 hours of heating required to stabilize the sample's electric parameters. The values of specific conductivity and free-carrier density suddenly increased by up to tenfold, and they persisted at those levels during further ageing. At the same time, the sample's conductivity became insensitive to stoichiometric changes in the crystal. We explain this effect as reflecting a sudden reformatting of the sample's native/foreign point-defect structure. This transformation is evaluated and mathematically approximated within the framework of our model of the melting of Te-containing second-phase particles; this process releases impurities from within the particles. The respective diffusion "clouds" grow, and at the moment of their mutual percolation (infiltration), a peculiar "short circuit" is observed with striking changes in the crystals' electrical parameters. |
| doi_str_mv | 10.1109/TNS.2015.2424720 |
| format | Article |
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At the same time, the sample's conductivity became insensitive to stoichiometric changes in the crystal. We explain this effect as reflecting a sudden reformatting of the sample's native/foreign point-defect structure. This transformation is evaluated and mathematically approximated within the framework of our model of the melting of Te-containing second-phase particles; this process releases impurities from within the particles. 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H.</creatorcontrib><creatorcontrib>Bolotnikov, A. E.</creatorcontrib><creatorcontrib>Yang, G.</creatorcontrib><creatorcontrib>James, R. B.</creatorcontrib><title>Changes in the Electrical Parameters of CdTe-based Crystals During Isothermal Annealing</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>We observed a novel unanticipated effect in CdTe, Cd 1-x Zn x Te and Cd 1-x Mn x Te crystals whilst we were measuring the dependences of several electrical properties (e.g., specific conductivity and free-carrier density) over time. During isothermal annealing under constant thermodynamic conditions (temperatures of 450- 500 ° C and under maximal cadmium-vapor pressure), we recorded a jump-like increase in the conductivity after some ~ 1 - 2 hours of heating required to stabilize the sample's electric parameters. The values of specific conductivity and free-carrier density suddenly increased by up to tenfold, and they persisted at those levels during further ageing. At the same time, the sample's conductivity became insensitive to stoichiometric changes in the crystal. We explain this effect as reflecting a sudden reformatting of the sample's native/foreign point-defect structure. This transformation is evaluated and mathematically approximated within the framework of our model of the melting of Te-containing second-phase particles; this process releases impurities from within the particles. The respective diffusion "clouds" grow, and at the moment of their mutual percolation (infiltration), a peculiar "short circuit" is observed with striking changes in the crystals' electrical parameters.</description><subject>Annealing</subject><subject>Cadmium compounds</subject><subject>component overpressure</subject><subject>Conductivity</subject><subject>Crystals</subject><subject>II-VI semiconductor materials</subject><subject>Impurities</subject><subject>inclusions</subject><subject>Temperature measurement</subject><subject>{\bf Cd}_{0.9}{\bf Zn}_{0.1}{\bf Te}</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1LAzEURYMoWKt7wU3-wNSX72RZxloLRQUrLod05qUdmU4lGRf996a0uHrcxz13cQi5ZzBhDNzj6vVjwoGpCZdcGg4XZMSUsgVTxl6SEQCzhZPOXZOblL5zlArUiHyVW99vMNG2p8MW6azDeoht7Tv67qPf4YAx0X2gZbPCYu0TNrSMhzT4LtGn39j2G7pI-4zGXWamfY--y89bchVyBe_Od0w-n2er8qVYvs0X5XRZ1BLEUAQbvAam9drV1nChnfDN2gopnGk4IDIfNIPGGI0KNfAarAuCu8CtaZwXYwKn3TruU4oYqp_Y7nw8VAyqo5gqi6mOYqqzmIw8nJAWEf_rhjEjtRB_wtleyQ</recordid><startdate>20150601</startdate><enddate>20150601</enddate><creator>Fochuk, P.</creator><creator>Nakonechnyi, I.</creator><creator>Panchuk, O.</creator><creator>Kopach, O.</creator><creator>Nykonyuk, Y.</creator><creator>Grill, R.</creator><creator>Belas, E.</creator><creator>Kim, K. H.</creator><creator>Bolotnikov, A. E.</creator><creator>Yang, G.</creator><creator>James, R. B.</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20150601</creationdate><title>Changes in the Electrical Parameters of CdTe-based Crystals During Isothermal Annealing</title><author>Fochuk, P. ; Nakonechnyi, I. ; Panchuk, O. ; Kopach, O. ; Nykonyuk, Y. ; Grill, R. ; Belas, E. ; Kim, K. H. ; Bolotnikov, A. E. ; Yang, G. ; James, R. B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c403t-f8fa60166b9c8723693adb834397d20ee1af610d776e5e602c089f329f287d9a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Annealing</topic><topic>Cadmium compounds</topic><topic>component overpressure</topic><topic>Conductivity</topic><topic>Crystals</topic><topic>II-VI semiconductor materials</topic><topic>Impurities</topic><topic>inclusions</topic><topic>Temperature measurement</topic><topic>{\bf Cd}_{0.9}{\bf Zn}_{0.1}{\bf Te}</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fochuk, P.</creatorcontrib><creatorcontrib>Nakonechnyi, I.</creatorcontrib><creatorcontrib>Panchuk, O.</creatorcontrib><creatorcontrib>Kopach, O.</creatorcontrib><creatorcontrib>Nykonyuk, Y.</creatorcontrib><creatorcontrib>Grill, R.</creatorcontrib><creatorcontrib>Belas, E.</creatorcontrib><creatorcontrib>Kim, K. H.</creatorcontrib><creatorcontrib>Bolotnikov, A. E.</creatorcontrib><creatorcontrib>Yang, G.</creatorcontrib><creatorcontrib>James, R. B.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Electronic Library (IEL)【Remote access available】</collection><collection>CrossRef</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Fochuk, P.</au><au>Nakonechnyi, I.</au><au>Panchuk, O.</au><au>Kopach, O.</au><au>Nykonyuk, Y.</au><au>Grill, R.</au><au>Belas, E.</au><au>Kim, K. H.</au><au>Bolotnikov, A. E.</au><au>Yang, G.</au><au>James, R. B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Changes in the Electrical Parameters of CdTe-based Crystals During Isothermal Annealing</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2015-06-01</date><risdate>2015</risdate><volume>62</volume><issue>3</issue><spage>1239</spage><epage>1243</epage><pages>1239-1243</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>We observed a novel unanticipated effect in CdTe, Cd 1-x Zn x Te and Cd 1-x Mn x Te crystals whilst we were measuring the dependences of several electrical properties (e.g., specific conductivity and free-carrier density) over time. During isothermal annealing under constant thermodynamic conditions (temperatures of 450- 500 ° C and under maximal cadmium-vapor pressure), we recorded a jump-like increase in the conductivity after some ~ 1 - 2 hours of heating required to stabilize the sample's electric parameters. The values of specific conductivity and free-carrier density suddenly increased by up to tenfold, and they persisted at those levels during further ageing. At the same time, the sample's conductivity became insensitive to stoichiometric changes in the crystal. We explain this effect as reflecting a sudden reformatting of the sample's native/foreign point-defect structure. This transformation is evaluated and mathematically approximated within the framework of our model of the melting of Te-containing second-phase particles; this process releases impurities from within the particles. The respective diffusion "clouds" grow, and at the moment of their mutual percolation (infiltration), a peculiar "short circuit" is observed with striking changes in the crystals' electrical parameters.</abstract><pub>IEEE</pub><doi>10.1109/TNS.2015.2424720</doi><tpages>5</tpages></addata></record> |
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| subjects | Annealing Cadmium compounds component overpressure Conductivity Crystals II-VI semiconductor materials Impurities inclusions Temperature measurement {\bf Cd}_{0.9}{\bf Zn}_{0.1}{\bf Te} |
| title | Changes in the Electrical Parameters of CdTe-based Crystals During Isothermal Annealing |
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