Charge Collection in Power MOSFETs for SEB Characterisation-Evidence of Energy Effects

Charge collection is used as a non-destructive technique to analyze the statistical response of vertical power MOSFETs and their single-event burnout (SEB) rate as a function of the incident ion energy. Two effects are observed at either low or high energy. At low energy, the collected charge signif...

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Veröffentlicht in:	IEEE transactions on nuclear science 2010-12, Vol.57 (6), p.3515-3527
Hauptverfasser:	Ferlet-Cavrois, V, Sturesson, F, Zadeh, A, Santin, G, Truscott, P, Poivey, C, Schwank, J R, Peyre, D, Binois, C, Beutier, T, Luu, A, Poizat, M, Chaumont, G, Harboe-Sørensen, R, Bezerra, F, Ecoffet, R
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge Charge collection Collection Energy (nuclear) Epitaxial layers ion energy and range Low energy MOSFETs Nondestructive testing Nuclear power generation Radiation hardening vertical power MOSFETs Wire
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