Effects of Halo Doping and Si Capping Layer Thickness on Total-Dose Effects in Ge p-MOSFETs
The total-dose response of Ge p-MOSFETs and p + -n junction diodes is reported for devices fabricated with several process variations. Radiation-induced reduction of the on-off current ratio increases with halo-doping density. Increasing the number of Si monolayers at the substrate/dielectric interf...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2010-08, Vol.57 (4), p.1933-1939 |
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| container_title | IEEE transactions on nuclear science |
| container_volume | 57 |
| creator | Arora, R Simoen, E En Xia Zhang Fleetwood, D M Schrimpf, R D Galloway, K F Choi, B K Mitard, J Meuris, M Claeys, C Madan, A Cressler, J D |
| description | The total-dose response of Ge p-MOSFETs and p + -n junction diodes is reported for devices fabricated with several process variations. Radiation-induced reduction of the on-off current ratio increases with halo-doping density. Increasing the number of Si monolayers at the substrate/dielectric interface reduces total-dose sensitivity for p-MOSFETs. Reduced mobility degradation is observed after irradiation for devices with a higher number of Si monolayers. The radiation-induced increase in junction leakage is related to the increasing perimeter component of the leakage current. MOSFETs with a higher number of Si monolayers at the dielectric/substrate interface also have reduced perimeter leakage current. Diode leakage current increases with increasing halo-doping density. |
| doi_str_mv | 10.1109/TNS.2010.2043745 |
| format | Article |
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Radiation-induced reduction of the on-off current ratio increases with halo-doping density. Increasing the number of Si monolayers at the substrate/dielectric interface reduces total-dose sensitivity for p-MOSFETs. Reduced mobility degradation is observed after irradiation for devices with a higher number of Si monolayers. The radiation-induced increase in junction leakage is related to the increasing perimeter component of the leakage current. MOSFETs with a higher number of Si monolayers at the dielectric/substrate interface also have reduced perimeter leakage current. Diode leakage current increases with increasing halo-doping density.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2010.2043745</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Density ; Devices ; Dielectric devices ; Dielectric materials ; Dielectric substrates ; Dielectrics ; Diode ; Diodes ; Doping ; Germanium ; Hafnium oxide ; Leakage current ; Monolayers ; MOSFET ; MOSFET circuits ; Silicon ; Silicon substrates ; x-ray ; {\rm p}^{+} -n</subject><ispartof>IEEE transactions on nuclear science, 2010-08, Vol.57 (4), p.1933-1939</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Aug 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c323t-a60fd7b87f5bbc16905fbe5a6ab64154bbba4ebdc6010c15f7bc9946c262b633</citedby><cites>FETCH-LOGICAL-c323t-a60fd7b87f5bbc16905fbe5a6ab64154bbba4ebdc6010c15f7bc9946c262b633</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5550297$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5550297$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Arora, R</creatorcontrib><creatorcontrib>Simoen, E</creatorcontrib><creatorcontrib>En Xia Zhang</creatorcontrib><creatorcontrib>Fleetwood, D M</creatorcontrib><creatorcontrib>Schrimpf, R D</creatorcontrib><creatorcontrib>Galloway, K F</creatorcontrib><creatorcontrib>Choi, B K</creatorcontrib><creatorcontrib>Mitard, J</creatorcontrib><creatorcontrib>Meuris, M</creatorcontrib><creatorcontrib>Claeys, C</creatorcontrib><creatorcontrib>Madan, A</creatorcontrib><creatorcontrib>Cressler, J D</creatorcontrib><title>Effects of Halo Doping and Si Capping Layer Thickness on Total-Dose Effects in Ge p-MOSFETs</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>The total-dose response of Ge p-MOSFETs and p + -n junction diodes is reported for devices fabricated with several process variations. Radiation-induced reduction of the on-off current ratio increases with halo-doping density. Increasing the number of Si monolayers at the substrate/dielectric interface reduces total-dose sensitivity for p-MOSFETs. Reduced mobility degradation is observed after irradiation for devices with a higher number of Si monolayers. The radiation-induced increase in junction leakage is related to the increasing perimeter component of the leakage current. MOSFETs with a higher number of Si monolayers at the dielectric/substrate interface also have reduced perimeter leakage current. Diode leakage current increases with increasing halo-doping density.</description><subject>Density</subject><subject>Devices</subject><subject>Dielectric devices</subject><subject>Dielectric materials</subject><subject>Dielectric substrates</subject><subject>Dielectrics</subject><subject>Diode</subject><subject>Diodes</subject><subject>Doping</subject><subject>Germanium</subject><subject>Hafnium oxide</subject><subject>Leakage current</subject><subject>Monolayers</subject><subject>MOSFET</subject><subject>MOSFET circuits</subject><subject>Silicon</subject><subject>Silicon substrates</subject><subject>x-ray</subject><subject>{\rm p}^{+} -n</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkDFPwzAQhS0EEqWwI7FYYmBKsROfE4-oLQWp0KHZGCzbtSEljUOcDv33uLQwMJ3e6XtPdw-ha0pGlBJxX74uRymJKiUsyxmcoAEFKBIKeXGKBoTQIhFMiHN0EcI6SgYEBuht6pw1fcDe4SdVezzxbdW8Y9Ws8LLCY9X-yLna2Q6XH5X5bGyIdINL36s6mfhg8W9G1eCZxW3yslg-Tstwic6cqoO9Os4hKuN6_JTMF7Pn8cM8MVma9YnixK1yXeQOtDaUCwJOW1Bcac4oMK21YlavDI_vGQou10YIxk3KU82zbIjuDrFt57-2NvRyUwVj61o11m-DLHgMYYVII3n7j1z7bdfE2yQlBWWcAOORIgfKdD6EzjrZdtVGdbsIyX3XMnYt913LY9fRcnOwVNbaPxwASCry7Bty6Xhl</recordid><startdate>201008</startdate><enddate>201008</enddate><creator>Arora, R</creator><creator>Simoen, E</creator><creator>En Xia Zhang</creator><creator>Fleetwood, D M</creator><creator>Schrimpf, R D</creator><creator>Galloway, K F</creator><creator>Choi, B K</creator><creator>Mitard, J</creator><creator>Meuris, M</creator><creator>Claeys, C</creator><creator>Madan, A</creator><creator>Cressler, J D</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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science</jtitle><stitle>TNS</stitle><date>2010-08</date><risdate>2010</risdate><volume>57</volume><issue>4</issue><spage>1933</spage><epage>1939</epage><pages>1933-1939</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>The total-dose response of Ge p-MOSFETs and p + -n junction diodes is reported for devices fabricated with several process variations. Radiation-induced reduction of the on-off current ratio increases with halo-doping density. Increasing the number of Si monolayers at the substrate/dielectric interface reduces total-dose sensitivity for p-MOSFETs. Reduced mobility degradation is observed after irradiation for devices with a higher number of Si monolayers. The radiation-induced increase in junction leakage is related to the increasing perimeter component of the leakage current. MOSFETs with a higher number of Si monolayers at the dielectric/substrate interface also have reduced perimeter leakage current. Diode leakage current increases with increasing halo-doping density.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2010.2043745</doi><tpages>7</tpages></addata></record> |
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| subjects | Density Devices Dielectric devices Dielectric materials Dielectric substrates Dielectrics Diode Diodes Doping Germanium Hafnium oxide Leakage current Monolayers MOSFET MOSFET circuits Silicon Silicon substrates x-ray {\rm p}^{+} -n |
| title | Effects of Halo Doping and Si Capping Layer Thickness on Total-Dose Effects in Ge p-MOSFETs |
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