Model for high-temperature radiation effects in n-p-n bipolar-junction transistors
A model is proposed to evaluate both the optimum temperature (leading to the maximum degradation of the device) and the degradation induced by high-temperature irradiation at a given dose rate on n-p-n bipolar-junction transistors. Using a genetic algorithm, the model parameters are extracted by fit...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2002-12, Vol.49 (6), p.2990-2997 |
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| container_title | IEEE transactions on nuclear science |
| container_volume | 49 |
| creator | Boch, J. Saigne, F. Mannoni, V. Giustino, F. Schrimpf, R.D. Dusseau, L. Galloway, K.F. Fesquet, J. Gasiot, J. Ecoffet, R. |
| description | A model is proposed to evaluate both the optimum temperature (leading to the maximum degradation of the device) and the degradation induced by high-temperature irradiation at a given dose rate on n-p-n bipolar-junction transistors. Using a genetic algorithm, the model parameters are extracted by fitting experimental curves. The model and experimental results, presented for two different devices, are in good agreement. The fitting procedure is discussed. |
| doi_str_mv | 10.1109/TNS.2002.805367 |
| format | Article |
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Using a genetic algorithm, the model parameters are extracted by fitting experimental curves. The model and experimental results, presented for two different devices, are in good agreement. The fitting procedure is discussed.</description><subject>Degradation</subject><subject>Devices</subject><subject>Dosage</subject><subject>Electron traps</subject><subject>Fittings</subject><subject>Genetic algorithms</subject><subject>Interface states</subject><subject>Mathematical models</subject><subject>Optimization</subject><subject>Performance evaluation</subject><subject>Protons</subject><subject>Radiation effects</subject><subject>Semiconductor devices</subject><subject>Space charge</subject><subject>Temperature dependence</subject><subject>Temperature sensors</subject><subject>Transistors</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqF0U2LFDEQBuAgCs6Onj14afaweMlM5au7c5RhV4VRQddzSHdX3Aw9nTZJH_z3ZmxhwYOeioKnCqpeQl4x2DEGen__6euOA_BdC0rUzROyYUq1lKmmfUo2AKylWmr9nFyldCqtVKA25MvHMOBYuRCrB__9gWY8zxhtXiJW0Q7eZh-mCp3DPqfKT9VEZzpVnZ_DaCM9LVP_W-Rop-RTDjG9IM-cHRO-_FO35Nvd7f3hPT1-fvfh8PZIe9GyTKVA18iGN86qDrQbOt4NkjFeg1RSOGyGgXW9sChtJ13dMOBSi64DbMEiii25WffOMfxYMGVz9qnHcbQThiUZ3grJoYb_w6awWugC3_wTMhCM65qXB2_J9V_0FJY4lXuN1gIAFL-g_Yr6GFKK6Mwc_dnGn2WTuYRmSmjmEppZQysTr9cJj4iPmpVLFBO_ABaEkkc</recordid><startdate>20021201</startdate><enddate>20021201</enddate><creator>Boch, J.</creator><creator>Saigne, F.</creator><creator>Mannoni, V.</creator><creator>Giustino, F.</creator><creator>Schrimpf, R.D.</creator><creator>Dusseau, L.</creator><creator>Galloway, K.F.</creator><creator>Fesquet, J.</creator><creator>Gasiot, J.</creator><creator>Ecoffet, R.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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science</jtitle><stitle>TNS</stitle><date>2002-12-01</date><risdate>2002</risdate><volume>49</volume><issue>6</issue><spage>2990</spage><epage>2997</epage><pages>2990-2997</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>A model is proposed to evaluate both the optimum temperature (leading to the maximum degradation of the device) and the degradation induced by high-temperature irradiation at a given dose rate on n-p-n bipolar-junction transistors. Using a genetic algorithm, the model parameters are extracted by fitting experimental curves. The model and experimental results, presented for two different devices, are in good agreement. The fitting procedure is discussed.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2002.805367</doi><tpages>8</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Degradation Devices Dosage Electron traps Fittings Genetic algorithms Interface states Mathematical models Optimization Performance evaluation Protons Radiation effects Semiconductor devices Space charge Temperature dependence Temperature sensors Transistors |
| title | Model for high-temperature radiation effects in n-p-n bipolar-junction transistors |
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