Model for high-temperature radiation effects in n-p-n bipolar-junction transistors

Model for high-temperature radiation effects in n-p-n bipolar-junction transistors

A model is proposed to evaluate both the optimum temperature (leading to the maximum degradation of the device) and the degradation induced by high-temperature irradiation at a given dose rate on n-p-n bipolar-junction transistors. Using a genetic algorithm, the model parameters are extracted by fit...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on nuclear science 2002-12, Vol.49 (6), p.2990-2997
Hauptverfasser: Boch, J., Saigne, F., Mannoni, V., Giustino, F., Schrimpf, R.D., Dusseau, L., Galloway, K.F., Fesquet, J., Gasiot, J., Ecoffet, R.
Format: Artikel
Sprache:eng
Schlagworte:
Degradation
Devices
Dosage
Electron traps
Fittings
Genetic algorithms
Interface states
Mathematical models
Optimization
Performance evaluation
Protons
Radiation effects
Semiconductor devices
Space charge
Temperature dependence
Temperature sensors
Transistors
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A model is proposed to evaluate both the optimum temperature (leading to the maximum degradation of the device) and the degradation induced by high-temperature irradiation at a given dose rate on n-p-n bipolar-junction transistors. Using a genetic algorithm, the model parameters are extracted by fitting experimental curves. The model and experimental results, presented for two different devices, are in good agreement. The fitting procedure is discussed.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2002.805367