The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method
The effect of oxygenation on the radiation hardness of silicon detectors was studied. Oxygen-enriched and standard float-zone silicon pin-diodes and oxidized samples were processed and irradiated with 15-MeV protons. After the irradiations, the surface photovoltage (SPV) method was applied to extrac...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2002-12, Vol.49 (6), p.2910-2913 |
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| creator | Harkonen, J. Tuominen, E. Tuovinen, E. Lassila-Perini, K. Mehtala, P. Nummela, S. Nysten, J. Heikkila, P. Ovchinnikov, V. Palokangas, M. Yli-Koski, M. Palmu, L. Kallijarvi, S. Alanko, T. Laitinen, P. Pirojenko, A. Riihimaki, I. Tiourine, G. Virtanen, A. |
| description | The effect of oxygenation on the radiation hardness of silicon detectors was studied. Oxygen-enriched and standard float-zone silicon pin-diodes and oxidized samples were processed and irradiated with 15-MeV protons. After the irradiations, the surface photovoltage (SPV) method was applied to extract minority carrier diffusion lengths of the silicon samples. Adding oxygen to silicon was found to improve the radiation hardness of silicon. The effect was visible in minority carrier diffusion lengths as well as in reverse bias leakage currents. The suitability of SPV method for characterizing irradiated silicon samples was proved. |
| doi_str_mv | 10.1109/TNS.2002.805345 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_TNS_2002_805345</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1134239</ieee_id><sourcerecordid>1031298456</sourcerecordid><originalsourceid>FETCH-LOGICAL-c462t-6e177f9f9dabb16052ab9c4d4c3f3b1092f5b2fd07269e12a7216f12e5ac233e3</originalsourceid><addsrcrecordid>eNqFkc1LxDAQxYMouK6ePXgpHsRLd_Pd5ijiF4geXM8lTSe7lW6zJqm4_71ZKggeFAaGefObB8ND6JTgGSFYzRdPLzOKMZ2VWDAu9tCECFHmRBTlPppgTMpccaUO0VEIb2nkAosJgsUKMrAWTMyczdzndgm9jq3rs1QxLb1u2lFYad_0EMIODG3XmqSFODQtNFm9zcLgrTaQbVYuug_XRb2EbA1x5ZpjdGB1F-Dku0_R6-3N4vo-f3y-e7i-eswNlzTmEkhRWGVVo-uaSCyorpXhDTfMsjo9Sa2oqW1wQaUCQnVBibSEgtCGMgZsii5G34137wOEWK3bYKDrdA9uCBUtpcRKyv_BopBcKpLAyz9BghmhquRi53n-C31zg-_Tv5VSDGMssErQfISMdyF4sNXGt2vtt8mp2uVYpRyrXY7VmGO6OBsvWgD4oQnjlCn2BesEmTE</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>993000509</pqid></control><display><type>article</type><title>The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method</title><source>IEEE Electronic Library (IEL)</source><creator>Harkonen, J. ; Tuominen, E. ; Tuovinen, E. ; Lassila-Perini, K. ; Mehtala, P. ; Nummela, S. ; Nysten, J. ; Heikkila, P. ; Ovchinnikov, V. ; Palokangas, M. ; Yli-Koski, M. ; Palmu, L. ; Kallijarvi, S. ; Alanko, T. ; Laitinen, P. ; Pirojenko, A. ; Riihimaki, I. ; Tiourine, G. ; Virtanen, A.</creator><creatorcontrib>Harkonen, J. ; Tuominen, E. ; Tuovinen, E. ; Lassila-Perini, K. ; Mehtala, P. ; Nummela, S. ; Nysten, J. ; Heikkila, P. ; Ovchinnikov, V. ; Palokangas, M. ; Yli-Koski, M. ; Palmu, L. ; Kallijarvi, S. ; Alanko, T. ; Laitinen, P. ; Pirojenko, A. ; Riihimaki, I. ; Tiourine, G. ; Virtanen, A.</creatorcontrib><description>The effect of oxygenation on the radiation hardness of silicon detectors was studied. Oxygen-enriched and standard float-zone silicon pin-diodes and oxidized samples were processed and irradiated with 15-MeV protons. After the irradiations, the surface photovoltage (SPV) method was applied to extract minority carrier diffusion lengths of the silicon samples. Adding oxygen to silicon was found to improve the radiation hardness of silicon. The effect was visible in minority carrier diffusion lengths as well as in reverse bias leakage currents. The suitability of SPV method for characterizing irradiated silicon samples was proved.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2002.805345</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Conductivity ; Diffusion length ; Irradiation ; Laboratories ; Large Hadron Collider ; Leakage current ; Microelectronics ; Minority carriers ; Oxygenation ; Photovoltages ; Physics ; Protons ; Radiation detectors ; Radiation hardness ; Semiconductor radiation detectors ; Silicon ; Silicon radiation detectors</subject><ispartof>IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.2910-2913</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2002</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c462t-6e177f9f9dabb16052ab9c4d4c3f3b1092f5b2fd07269e12a7216f12e5ac233e3</citedby><cites>FETCH-LOGICAL-c462t-6e177f9f9dabb16052ab9c4d4c3f3b1092f5b2fd07269e12a7216f12e5ac233e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1134239$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1134239$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Harkonen, J.</creatorcontrib><creatorcontrib>Tuominen, E.</creatorcontrib><creatorcontrib>Tuovinen, E.</creatorcontrib><creatorcontrib>Lassila-Perini, K.</creatorcontrib><creatorcontrib>Mehtala, P.</creatorcontrib><creatorcontrib>Nummela, S.</creatorcontrib><creatorcontrib>Nysten, J.</creatorcontrib><creatorcontrib>Heikkila, P.</creatorcontrib><creatorcontrib>Ovchinnikov, V.</creatorcontrib><creatorcontrib>Palokangas, M.</creatorcontrib><creatorcontrib>Yli-Koski, M.</creatorcontrib><creatorcontrib>Palmu, L.</creatorcontrib><creatorcontrib>Kallijarvi, S.</creatorcontrib><creatorcontrib>Alanko, T.</creatorcontrib><creatorcontrib>Laitinen, P.</creatorcontrib><creatorcontrib>Pirojenko, A.</creatorcontrib><creatorcontrib>Riihimaki, I.</creatorcontrib><creatorcontrib>Tiourine, G.</creatorcontrib><creatorcontrib>Virtanen, A.</creatorcontrib><title>The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>The effect of oxygenation on the radiation hardness of silicon detectors was studied. Oxygen-enriched and standard float-zone silicon pin-diodes and oxidized samples were processed and irradiated with 15-MeV protons. After the irradiations, the surface photovoltage (SPV) method was applied to extract minority carrier diffusion lengths of the silicon samples. Adding oxygen to silicon was found to improve the radiation hardness of silicon. The effect was visible in minority carrier diffusion lengths as well as in reverse bias leakage currents. The suitability of SPV method for characterizing irradiated silicon samples was proved.</description><subject>Conductivity</subject><subject>Diffusion length</subject><subject>Irradiation</subject><subject>Laboratories</subject><subject>Large Hadron Collider</subject><subject>Leakage current</subject><subject>Microelectronics</subject><subject>Minority carriers</subject><subject>Oxygenation</subject><subject>Photovoltages</subject><subject>Physics</subject><subject>Protons</subject><subject>Radiation detectors</subject><subject>Radiation hardness</subject><subject>Semiconductor radiation detectors</subject><subject>Silicon</subject><subject>Silicon radiation detectors</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkc1LxDAQxYMouK6ePXgpHsRLd_Pd5ijiF4geXM8lTSe7lW6zJqm4_71ZKggeFAaGefObB8ND6JTgGSFYzRdPLzOKMZ2VWDAu9tCECFHmRBTlPppgTMpccaUO0VEIb2nkAosJgsUKMrAWTMyczdzndgm9jq3rs1QxLb1u2lFYad_0EMIODG3XmqSFODQtNFm9zcLgrTaQbVYuug_XRb2EbA1x5ZpjdGB1F-Dku0_R6-3N4vo-f3y-e7i-eswNlzTmEkhRWGVVo-uaSCyorpXhDTfMsjo9Sa2oqW1wQaUCQnVBibSEgtCGMgZsii5G34137wOEWK3bYKDrdA9uCBUtpcRKyv_BopBcKpLAyz9BghmhquRi53n-C31zg-_Tv5VSDGMssErQfISMdyF4sNXGt2vtt8mp2uVYpRyrXY7VmGO6OBsvWgD4oQnjlCn2BesEmTE</recordid><startdate>20021201</startdate><enddate>20021201</enddate><creator>Harkonen, J.</creator><creator>Tuominen, E.</creator><creator>Tuovinen, E.</creator><creator>Lassila-Perini, K.</creator><creator>Mehtala, P.</creator><creator>Nummela, S.</creator><creator>Nysten, J.</creator><creator>Heikkila, P.</creator><creator>Ovchinnikov, V.</creator><creator>Palokangas, M.</creator><creator>Yli-Koski, M.</creator><creator>Palmu, L.</creator><creator>Kallijarvi, S.</creator><creator>Alanko, T.</creator><creator>Laitinen, P.</creator><creator>Pirojenko, A.</creator><creator>Riihimaki, I.</creator><creator>Tiourine, G.</creator><creator>Virtanen, A.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QL</scope><scope>7QQ</scope><scope>7SC</scope><scope>7SE</scope><scope>7SP</scope><scope>7SR</scope><scope>7T7</scope><scope>7TA</scope><scope>7TB</scope><scope>7U5</scope><scope>7U9</scope><scope>8BQ</scope><scope>8FD</scope><scope>C1K</scope><scope>F28</scope><scope>FR3</scope><scope>H8D</scope><scope>H94</scope><scope>JG9</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>M7N</scope><scope>P64</scope></search><sort><creationdate>20021201</creationdate><title>The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method</title><author>Harkonen, J. ; Tuominen, E. ; Tuovinen, E. ; Lassila-Perini, K. ; Mehtala, P. ; Nummela, S. ; Nysten, J. ; Heikkila, P. ; Ovchinnikov, V. ; Palokangas, M. ; Yli-Koski, M. ; Palmu, L. ; Kallijarvi, S. ; Alanko, T. ; Laitinen, P. ; Pirojenko, A. ; Riihimaki, I. ; Tiourine, G. ; Virtanen, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c462t-6e177f9f9dabb16052ab9c4d4c3f3b1092f5b2fd07269e12a7216f12e5ac233e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Conductivity</topic><topic>Diffusion length</topic><topic>Irradiation</topic><topic>Laboratories</topic><topic>Large Hadron Collider</topic><topic>Leakage current</topic><topic>Microelectronics</topic><topic>Minority carriers</topic><topic>Oxygenation</topic><topic>Photovoltages</topic><topic>Physics</topic><topic>Protons</topic><topic>Radiation detectors</topic><topic>Radiation hardness</topic><topic>Semiconductor radiation detectors</topic><topic>Silicon</topic><topic>Silicon radiation detectors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Harkonen, J.</creatorcontrib><creatorcontrib>Tuominen, E.</creatorcontrib><creatorcontrib>Tuovinen, E.</creatorcontrib><creatorcontrib>Lassila-Perini, K.</creatorcontrib><creatorcontrib>Mehtala, P.</creatorcontrib><creatorcontrib>Nummela, S.</creatorcontrib><creatorcontrib>Nysten, J.</creatorcontrib><creatorcontrib>Heikkila, P.</creatorcontrib><creatorcontrib>Ovchinnikov, V.</creatorcontrib><creatorcontrib>Palokangas, M.</creatorcontrib><creatorcontrib>Yli-Koski, M.</creatorcontrib><creatorcontrib>Palmu, L.</creatorcontrib><creatorcontrib>Kallijarvi, S.</creatorcontrib><creatorcontrib>Alanko, T.</creatorcontrib><creatorcontrib>Laitinen, P.</creatorcontrib><creatorcontrib>Pirojenko, A.</creatorcontrib><creatorcontrib>Riihimaki, I.</creatorcontrib><creatorcontrib>Tiourine, G.</creatorcontrib><creatorcontrib>Virtanen, A.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Industrial and Applied Microbiology Abstracts (Microbiology A)</collection><collection>Materials Business File</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Virology and AIDS Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>AIDS and Cancer Research Abstracts</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Algology Mycology and Protozoology Abstracts (Microbiology C)</collection><collection>Biotechnology and BioEngineering Abstracts</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Harkonen, J.</au><au>Tuominen, E.</au><au>Tuovinen, E.</au><au>Lassila-Perini, K.</au><au>Mehtala, P.</au><au>Nummela, S.</au><au>Nysten, J.</au><au>Heikkila, P.</au><au>Ovchinnikov, V.</au><au>Palokangas, M.</au><au>Yli-Koski, M.</au><au>Palmu, L.</au><au>Kallijarvi, S.</au><au>Alanko, T.</au><au>Laitinen, P.</au><au>Pirojenko, A.</au><au>Riihimaki, I.</au><au>Tiourine, G.</au><au>Virtanen, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2002-12-01</date><risdate>2002</risdate><volume>49</volume><issue>6</issue><spage>2910</spage><epage>2913</epage><pages>2910-2913</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>The effect of oxygenation on the radiation hardness of silicon detectors was studied. Oxygen-enriched and standard float-zone silicon pin-diodes and oxidized samples were processed and irradiated with 15-MeV protons. After the irradiations, the surface photovoltage (SPV) method was applied to extract minority carrier diffusion lengths of the silicon samples. Adding oxygen to silicon was found to improve the radiation hardness of silicon. The effect was visible in minority carrier diffusion lengths as well as in reverse bias leakage currents. The suitability of SPV method for characterizing irradiated silicon samples was proved.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2002.805345</doi><tpages>4</tpages></addata></record> |
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| subjects | Conductivity Diffusion length Irradiation Laboratories Large Hadron Collider Leakage current Microelectronics Minority carriers Oxygenation Photovoltages Physics Protons Radiation detectors Radiation hardness Semiconductor radiation detectors Silicon Silicon radiation detectors |
| title | The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T15%3A45%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20effect%20of%20oxygenation%20on%20the%20radiation%20hardness%20of%20silicon%20studied%20by%20surface%20photovoltage%20method&rft.jtitle=IEEE%20transactions%20on%20nuclear%20science&rft.au=Harkonen,%20J.&rft.date=2002-12-01&rft.volume=49&rft.issue=6&rft.spage=2910&rft.epage=2913&rft.pages=2910-2913&rft.issn=0018-9499&rft.eissn=1558-1578&rft.coden=IETNAE&rft_id=info:doi/10.1109/TNS.2002.805345&rft_dat=%3Cproquest_RIE%3E1031298456%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=993000509&rft_id=info:pmid/&rft_ieee_id=1134239&rfr_iscdi=true |