Study of the resistivity mapping in CdTe:Cl-correlation with annealing and Te-precipitates
The presence of defects in Cl-doped CdTe crystals influences the electrical properties and the homogeneity of the material. The aim of this paper is to study the effects of thermal treatment on the precipitates present in the volume of the material and thus on the uniformity of the material in regar...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on nuclear science 2002-08, Vol.49 (4), p.1954-1959 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1959 |
|---|---|
| container_issue | 4 |
| container_start_page | 1954 |
| container_title | IEEE transactions on nuclear science |
| container_volume | 49 |
| creator | Ayoub, M. Hage-Ali, M. Zumbiehl, A. Regal, R. Koebel, J.M. Rit, C. Fougeres, P. Siffert, P. |
| description | The presence of defects in Cl-doped CdTe crystals influences the electrical properties and the homogeneity of the material. The aim of this paper is to study the effects of thermal treatment on the precipitates present in the volume of the material and thus on the uniformity of the material in regards to both resistivity and precipitate concentrations. The samples are annealed under argon pressure. The number of precipitates, generally of Te, is measured using infrared microscopy. In addition, a low-cost contactless measurement technique for resistivity mapping has been developed. This technique presents a good spatial resolution of approximately 1 mm and a resistivity range measurement of 10/sup 6/-10/sup 10/ /spl Omega/-cm. The relation between the number of Te-precipitates and the resistivity maps is investigated. A decrease in the number of Te-precipitates after sample annealing is observed. Furthermore, the resistivity decreases with an increase in the number of precipitates in the material. The uniformity of the annealed samples is discussed. The correlation of the resistivity maps and the Te-precipitates is also given, illustrated by comparison topography with resistivity and Te-precipitate concentrations. The contactless resistivity measurement technique is also described. |
| doi_str_mv | 10.1109/TNS.2002.801519 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_TNS_2002_801519</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1043606</ieee_id><sourcerecordid>2630138371</sourcerecordid><originalsourceid>FETCH-LOGICAL-c349t-945589f6a083c49dfa8f0d789e94d780c73a135a2a38866b74f99273991418a13</originalsourceid><addsrcrecordid>eNp9kb1PwzAQxS0EEqUwM7BYDDCl2LGd-NhQxZeEYKAsLJZJLtRVmgTbBfW_x1UZEAPT6XS_9_ROj5BjziacM7iYPT5PcsbyiWZccdghI66Uzrgq9S4ZMcZ1BhJgnxyEsEirVEyNyOtzXNVr2jc0zpF6DC5E9-nimi7tMLjunbqOTusZXk7brOq9x9ZG13f0y8U5tV2Htt1QtqvpDLPBY-UGF23EcEj2GtsGPPqZY_Jycz2b3mUPT7f306uHrBISYgqVYkJTWKZFJaFurG5YXWpAkGmwqhSWC2VzK7QuirdSNgB5KQC45DqdxuR86zv4_mOFIZqlCxW2re2wXwUDrAQlCiUTefYvmWsFQqs8gad_wEW_8l36wgAIxgqRAozJxRaqfB-Cx8YM3i2tXxvOzKYSkyoxm0rMtpKkONkqHCL-oqUokuU31yqF7g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>993006327</pqid></control><display><type>article</type><title>Study of the resistivity mapping in CdTe:Cl-correlation with annealing and Te-precipitates</title><source>IEEE Electronic Library (IEL)</source><creator>Ayoub, M. ; Hage-Ali, M. ; Zumbiehl, A. ; Regal, R. ; Koebel, J.M. ; Rit, C. ; Fougeres, P. ; Siffert, P.</creator><creatorcontrib>Ayoub, M. ; Hage-Ali, M. ; Zumbiehl, A. ; Regal, R. ; Koebel, J.M. ; Rit, C. ; Fougeres, P. ; Siffert, P.</creatorcontrib><description>The presence of defects in Cl-doped CdTe crystals influences the electrical properties and the homogeneity of the material. The aim of this paper is to study the effects of thermal treatment on the precipitates present in the volume of the material and thus on the uniformity of the material in regards to both resistivity and precipitate concentrations. The samples are annealed under argon pressure. The number of precipitates, generally of Te, is measured using infrared microscopy. In addition, a low-cost contactless measurement technique for resistivity mapping has been developed. This technique presents a good spatial resolution of approximately 1 mm and a resistivity range measurement of 10/sup 6/-10/sup 10/ /spl Omega/-cm. The relation between the number of Te-precipitates and the resistivity maps is investigated. A decrease in the number of Te-precipitates after sample annealing is observed. Furthermore, the resistivity decreases with an increase in the number of precipitates in the material. The uniformity of the annealed samples is discussed. The correlation of the resistivity maps and the Te-precipitates is also given, illustrated by comparison topography with resistivity and Te-precipitate concentrations. The contactless resistivity measurement technique is also described.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2002.801519</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Annealing ; Argon ; Conductivity ; Crystalline materials ; Crystals ; Measurement techniques ; Microscopy ; Spatial resolution ; Tellurium ; Thermal resistance</subject><ispartof>IEEE transactions on nuclear science, 2002-08, Vol.49 (4), p.1954-1959</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2002</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c349t-945589f6a083c49dfa8f0d789e94d780c73a135a2a38866b74f99273991418a13</citedby><cites>FETCH-LOGICAL-c349t-945589f6a083c49dfa8f0d789e94d780c73a135a2a38866b74f99273991418a13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1043606$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1043606$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ayoub, M.</creatorcontrib><creatorcontrib>Hage-Ali, M.</creatorcontrib><creatorcontrib>Zumbiehl, A.</creatorcontrib><creatorcontrib>Regal, R.</creatorcontrib><creatorcontrib>Koebel, J.M.</creatorcontrib><creatorcontrib>Rit, C.</creatorcontrib><creatorcontrib>Fougeres, P.</creatorcontrib><creatorcontrib>Siffert, P.</creatorcontrib><title>Study of the resistivity mapping in CdTe:Cl-correlation with annealing and Te-precipitates</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>The presence of defects in Cl-doped CdTe crystals influences the electrical properties and the homogeneity of the material. The aim of this paper is to study the effects of thermal treatment on the precipitates present in the volume of the material and thus on the uniformity of the material in regards to both resistivity and precipitate concentrations. The samples are annealed under argon pressure. The number of precipitates, generally of Te, is measured using infrared microscopy. In addition, a low-cost contactless measurement technique for resistivity mapping has been developed. This technique presents a good spatial resolution of approximately 1 mm and a resistivity range measurement of 10/sup 6/-10/sup 10/ /spl Omega/-cm. The relation between the number of Te-precipitates and the resistivity maps is investigated. A decrease in the number of Te-precipitates after sample annealing is observed. Furthermore, the resistivity decreases with an increase in the number of precipitates in the material. The uniformity of the annealed samples is discussed. The correlation of the resistivity maps and the Te-precipitates is also given, illustrated by comparison topography with resistivity and Te-precipitate concentrations. The contactless resistivity measurement technique is also described.</description><subject>Annealing</subject><subject>Argon</subject><subject>Conductivity</subject><subject>Crystalline materials</subject><subject>Crystals</subject><subject>Measurement techniques</subject><subject>Microscopy</subject><subject>Spatial resolution</subject><subject>Tellurium</subject><subject>Thermal resistance</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kb1PwzAQxS0EEqUwM7BYDDCl2LGd-NhQxZeEYKAsLJZJLtRVmgTbBfW_x1UZEAPT6XS_9_ROj5BjziacM7iYPT5PcsbyiWZccdghI66Uzrgq9S4ZMcZ1BhJgnxyEsEirVEyNyOtzXNVr2jc0zpF6DC5E9-nimi7tMLjunbqOTusZXk7brOq9x9ZG13f0y8U5tV2Htt1QtqvpDLPBY-UGF23EcEj2GtsGPPqZY_Jycz2b3mUPT7f306uHrBISYgqVYkJTWKZFJaFurG5YXWpAkGmwqhSWC2VzK7QuirdSNgB5KQC45DqdxuR86zv4_mOFIZqlCxW2re2wXwUDrAQlCiUTefYvmWsFQqs8gad_wEW_8l36wgAIxgqRAozJxRaqfB-Cx8YM3i2tXxvOzKYSkyoxm0rMtpKkONkqHCL-oqUokuU31yqF7g</recordid><startdate>20020801</startdate><enddate>20020801</enddate><creator>Ayoub, M.</creator><creator>Hage-Ali, M.</creator><creator>Zumbiehl, A.</creator><creator>Regal, R.</creator><creator>Koebel, J.M.</creator><creator>Rit, C.</creator><creator>Fougeres, P.</creator><creator>Siffert, P.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QL</scope><scope>7QQ</scope><scope>7SC</scope><scope>7SE</scope><scope>7SP</scope><scope>7SR</scope><scope>7T7</scope><scope>7TA</scope><scope>7TB</scope><scope>7U5</scope><scope>7U9</scope><scope>8BQ</scope><scope>8FD</scope><scope>C1K</scope><scope>F28</scope><scope>FR3</scope><scope>H8D</scope><scope>H94</scope><scope>JG9</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>M7N</scope><scope>P64</scope><scope>7TG</scope><scope>KL.</scope></search><sort><creationdate>20020801</creationdate><title>Study of the resistivity mapping in CdTe:Cl-correlation with annealing and Te-precipitates</title><author>Ayoub, M. ; Hage-Ali, M. ; Zumbiehl, A. ; Regal, R. ; Koebel, J.M. ; Rit, C. ; Fougeres, P. ; Siffert, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c349t-945589f6a083c49dfa8f0d789e94d780c73a135a2a38866b74f99273991418a13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Annealing</topic><topic>Argon</topic><topic>Conductivity</topic><topic>Crystalline materials</topic><topic>Crystals</topic><topic>Measurement techniques</topic><topic>Microscopy</topic><topic>Spatial resolution</topic><topic>Tellurium</topic><topic>Thermal resistance</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ayoub, M.</creatorcontrib><creatorcontrib>Hage-Ali, M.</creatorcontrib><creatorcontrib>Zumbiehl, A.</creatorcontrib><creatorcontrib>Regal, R.</creatorcontrib><creatorcontrib>Koebel, J.M.</creatorcontrib><creatorcontrib>Rit, C.</creatorcontrib><creatorcontrib>Fougeres, P.</creatorcontrib><creatorcontrib>Siffert, P.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Industrial and Applied Microbiology Abstracts (Microbiology A)</collection><collection>Materials Business File</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Virology and AIDS Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>AIDS and Cancer Research Abstracts</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Algology Mycology and Protozoology Abstracts (Microbiology C)</collection><collection>Biotechnology and BioEngineering Abstracts</collection><collection>Meteorological & Geoastrophysical Abstracts</collection><collection>Meteorological & Geoastrophysical Abstracts - Academic</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ayoub, M.</au><au>Hage-Ali, M.</au><au>Zumbiehl, A.</au><au>Regal, R.</au><au>Koebel, J.M.</au><au>Rit, C.</au><au>Fougeres, P.</au><au>Siffert, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study of the resistivity mapping in CdTe:Cl-correlation with annealing and Te-precipitates</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2002-08-01</date><risdate>2002</risdate><volume>49</volume><issue>4</issue><spage>1954</spage><epage>1959</epage><pages>1954-1959</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>The presence of defects in Cl-doped CdTe crystals influences the electrical properties and the homogeneity of the material. The aim of this paper is to study the effects of thermal treatment on the precipitates present in the volume of the material and thus on the uniformity of the material in regards to both resistivity and precipitate concentrations. The samples are annealed under argon pressure. The number of precipitates, generally of Te, is measured using infrared microscopy. In addition, a low-cost contactless measurement technique for resistivity mapping has been developed. This technique presents a good spatial resolution of approximately 1 mm and a resistivity range measurement of 10/sup 6/-10/sup 10/ /spl Omega/-cm. The relation between the number of Te-precipitates and the resistivity maps is investigated. A decrease in the number of Te-precipitates after sample annealing is observed. Furthermore, the resistivity decreases with an increase in the number of precipitates in the material. The uniformity of the annealed samples is discussed. The correlation of the resistivity maps and the Te-precipitates is also given, illustrated by comparison topography with resistivity and Te-precipitate concentrations. The contactless resistivity measurement technique is also described.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2002.801519</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9499 |
| ispartof | IEEE transactions on nuclear science, 2002-08, Vol.49 (4), p.1954-1959 |
| issn | 0018-9499 1558-1578 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_TNS_2002_801519 |
| source | IEEE Electronic Library (IEL) |
| subjects | Annealing Argon Conductivity Crystalline materials Crystals Measurement techniques Microscopy Spatial resolution Tellurium Thermal resistance |
| title | Study of the resistivity mapping in CdTe:Cl-correlation with annealing and Te-precipitates |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T22%3A14%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Study%20of%20the%20resistivity%20mapping%20in%20CdTe:Cl-correlation%20with%20annealing%20and%20Te-precipitates&rft.jtitle=IEEE%20transactions%20on%20nuclear%20science&rft.au=Ayoub,%20M.&rft.date=2002-08-01&rft.volume=49&rft.issue=4&rft.spage=1954&rft.epage=1959&rft.pages=1954-1959&rft.issn=0018-9499&rft.eissn=1558-1578&rft.coden=IETNAE&rft_id=info:doi/10.1109/TNS.2002.801519&rft_dat=%3Cproquest_RIE%3E2630138371%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=993006327&rft_id=info:pmid/&rft_ieee_id=1043606&rfr_iscdi=true |