Radiation induced charge trapping at the silicon sapphire substrate interface
The radiation induced charge trapping at the silicon sapphire interface and its effect on MIS/SOS device performance has been experimentally determined for a total ionizing dose up to 108 rads (Si). These effects were determined by measuring the electrical characteristics of three types of device st...
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| Veröffentlicht in: | IEEE transactions on nuclear science 1974-12, Vol.21 (6), p.211-216 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
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