Gamma Ray Detectors Made from High Purity Germanium
A solution regrowth technique for growing P+ and N+ contacts on high purity germanium is described. Copper contamination of the high purity germanium is minimized by using KCN to remove copper from the surface of the germanium and by the gettering ability of molten indium in contact with the germani...
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| Veröffentlicht in: | IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci. NS-17: No. 3, 235-40(Jun 1970) Trans. Nucl. Sci. NS-17: No. 3, 235-40(Jun 1970), 1970-01, Vol.17 (3), p.235-240 |
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| container_title | IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci. NS-17: No. 3, 235-40(Jun 1970) |
| container_volume | 17 |
| creator | Baertsch, R. D. Hall, R. N. |
| description | A solution regrowth technique for growing P+ and N+ contacts on high purity germanium is described. Copper contamination of the high purity germanium is minimized by using KCN to remove copper from the surface of the germanium and by the gettering ability of molten indium in contact with the germanium. Diodes with leakage currents as low as 3 × 10-11 amp for 2000 volts applied to a fully depleted 4 mm thick detector have been fabricated. Preliminary measurements show that the resolution obtained with these diodes is comparable to the best Li drifted germanium detectors at 60 keV and 122 keV. Diodes have been warmed to room temperature as many as five times with no degradation in resolution. |
| doi_str_mv | 10.1109/TNS.1970.4325695 |
| format | Article |
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D. ; Hall, R. N.</creator><creatorcontrib>Baertsch, R. D. ; Hall, R. N. ; General Electric Research and Development Center, Schenectady, N. Y</creatorcontrib><description>A solution regrowth technique for growing P+ and N+ contacts on high purity germanium is described. Copper contamination of the high purity germanium is minimized by using KCN to remove copper from the surface of the germanium and by the gettering ability of molten indium in contact with the germanium. Diodes with leakage currents as low as 3 × 10-11 amp for 2000 volts applied to a fully depleted 4 mm thick detector have been fabricated. Preliminary measurements show that the resolution obtained with these diodes is comparable to the best Li drifted germanium detectors at 60 keV and 122 keV. Diodes have been warmed to room temperature as many as five times with no degradation in resolution.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.1970.4325695</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>United States: IEEE</publisher><subject>Copper ; DIODES ; FABRICATION ; Gamma ray detectors ; GAMMA SPECTROMETERS ; GAMMA SPECTROMETERS/performance of germanium semiconductor ; GERMANIUM ; Gettering ; Indium ; Leak detection ; Leakage current ; N26110 -Instrumentation-Radiation Detection Instruments- General Detectors & Monitors ; Pollution measurement ; RADIATION DETECTORS, SEMICONDUCTOR (GERMANIUM)/fabrication for gamma spectroscopy ; RADIATION DETECTORS, SEMICONDUCTOR (GERMANIUM)/performance for gamma spectroscopy ; RESOLUTION ; SEMICONDUCTOR COUNTERS ; Surface contamination</subject><ispartof>IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci. 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D.</creatorcontrib><creatorcontrib>Hall, R. N.</creatorcontrib><creatorcontrib>General Electric Research and Development Center, Schenectady, N. Y</creatorcontrib><title>Gamma Ray Detectors Made from High Purity Germanium</title><title>IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci. NS-17: No. 3, 235-40(Jun 1970)</title><addtitle>TNS</addtitle><description>A solution regrowth technique for growing P+ and N+ contacts on high purity germanium is described. Copper contamination of the high purity germanium is minimized by using KCN to remove copper from the surface of the germanium and by the gettering ability of molten indium in contact with the germanium. Diodes with leakage currents as low as 3 × 10-11 amp for 2000 volts applied to a fully depleted 4 mm thick detector have been fabricated. Preliminary measurements show that the resolution obtained with these diodes is comparable to the best Li drifted germanium detectors at 60 keV and 122 keV. Diodes have been warmed to room temperature as many as five times with no degradation in resolution.</description><subject>Copper</subject><subject>DIODES</subject><subject>FABRICATION</subject><subject>Gamma ray detectors</subject><subject>GAMMA SPECTROMETERS</subject><subject>GAMMA SPECTROMETERS/performance of germanium semiconductor</subject><subject>GERMANIUM</subject><subject>Gettering</subject><subject>Indium</subject><subject>Leak detection</subject><subject>Leakage current</subject><subject>N26110 -Instrumentation-Radiation Detection Instruments- General Detectors & Monitors</subject><subject>Pollution measurement</subject><subject>RADIATION DETECTORS, SEMICONDUCTOR (GERMANIUM)/fabrication for gamma spectroscopy</subject><subject>RADIATION DETECTORS, SEMICONDUCTOR (GERMANIUM)/performance for gamma spectroscopy</subject><subject>RESOLUTION</subject><subject>SEMICONDUCTOR COUNTERS</subject><subject>Surface contamination</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1970</creationdate><recordtype>article</recordtype><recordid>eNo9kM1LAzEUxIMoWKt3wUvwvvXlyyRHqbYV6gdazyHNvtiI25Vke-h_75ZWT49hZh7Dj5BLBiPGwN4snt9HzGoYScHVrVVHZMCUMhVT2hyTAQAzlZXWnpKzUr56KRWoARFT3zSevvktvccOQ9fmQp98jTTmtqGz9Lmir5ucui2dYm78Om2ac3IS_XfBi8Mdko_Jw2I8q-Yv08fx3bwKQsmuqrmPPFowXC0Vg6iFBqwND3VvexuF4V5rqCWyCCpKyQ0aBVYsGQax5GJIrvd_29IlV0Lq961Cu173M51kUmi9C8E-FHJbSsbofnJqfN46Bm5HxvVk3I6MO5DpK1f7SkLE__if-wu4Ll0v</recordid><startdate>19700101</startdate><enddate>19700101</enddate><creator>Baertsch, R. D.</creator><creator>Hall, R. N.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19700101</creationdate><title>Gamma Ray Detectors Made from High Purity Germanium</title><author>Baertsch, R. D. ; Hall, R. N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c354t-d2af2f90825b510f7370ed82cd354a9f382a770d4e1f05f4428e85093b1ec3b23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1970</creationdate><topic>Copper</topic><topic>DIODES</topic><topic>FABRICATION</topic><topic>Gamma ray detectors</topic><topic>GAMMA SPECTROMETERS</topic><topic>GAMMA SPECTROMETERS/performance of germanium semiconductor</topic><topic>GERMANIUM</topic><topic>Gettering</topic><topic>Indium</topic><topic>Leak detection</topic><topic>Leakage current</topic><topic>N26110 -Instrumentation-Radiation Detection Instruments- General Detectors & Monitors</topic><topic>Pollution measurement</topic><topic>RADIATION DETECTORS, SEMICONDUCTOR (GERMANIUM)/fabrication for gamma spectroscopy</topic><topic>RADIATION DETECTORS, SEMICONDUCTOR (GERMANIUM)/performance for gamma spectroscopy</topic><topic>RESOLUTION</topic><topic>SEMICONDUCTOR COUNTERS</topic><topic>Surface contamination</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Baertsch, R. D.</creatorcontrib><creatorcontrib>Hall, R. N.</creatorcontrib><creatorcontrib>General Electric Research and Development Center, Schenectady, N. Y</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci. NS-17: No. 3, 235-40(Jun 1970)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Baertsch, R. D.</au><au>Hall, R. N.</au><aucorp>General Electric Research and Development Center, Schenectady, N. Y</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Gamma Ray Detectors Made from High Purity Germanium</atitle><jtitle>IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci. NS-17: No. 3, 235-40(Jun 1970)</jtitle><stitle>TNS</stitle><date>1970-01-01</date><risdate>1970</risdate><volume>17</volume><issue>3</issue><spage>235</spage><epage>240</epage><pages>235-240</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>A solution regrowth technique for growing P+ and N+ contacts on high purity germanium is described. Copper contamination of the high purity germanium is minimized by using KCN to remove copper from the surface of the germanium and by the gettering ability of molten indium in contact with the germanium. Diodes with leakage currents as low as 3 × 10-11 amp for 2000 volts applied to a fully depleted 4 mm thick detector have been fabricated. Preliminary measurements show that the resolution obtained with these diodes is comparable to the best Li drifted germanium detectors at 60 keV and 122 keV. Diodes have been warmed to room temperature as many as five times with no degradation in resolution.</abstract><cop>United States</cop><pub>IEEE</pub><doi>10.1109/TNS.1970.4325695</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 0018-9499 |
| ispartof | IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci. NS-17: No. 3, 235-40(Jun 1970), 1970-01, Vol.17 (3), p.235-240 |
| issn | 0018-9499 1558-1578 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_TNS_1970_4325695 |
| source | IEEE Electronic Library (IEL) |
| subjects | Copper DIODES FABRICATION Gamma ray detectors GAMMA SPECTROMETERS GAMMA SPECTROMETERS/performance of germanium semiconductor GERMANIUM Gettering Indium Leak detection Leakage current N26110 -Instrumentation-Radiation Detection Instruments- General Detectors & Monitors Pollution measurement RADIATION DETECTORS, SEMICONDUCTOR (GERMANIUM)/fabrication for gamma spectroscopy RADIATION DETECTORS, SEMICONDUCTOR (GERMANIUM)/performance for gamma spectroscopy RESOLUTION SEMICONDUCTOR COUNTERS Surface contamination |
| title | Gamma Ray Detectors Made from High Purity Germanium |
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