The Effects of Operating Temperature on the Behaviour of Semiconductor Detectors

The similarity in behaviour shown by lithium-drifted germanium and silicon detectors in recent detailed studies of their spectrometer performance over a wide temperature range1-3 suggested a comparison with the effects of temperature on the operation of other types of semiconductor detector. In this...

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Veröffentlicht in:	IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci. NS-17: No. 3, 139-48(Jun 1970) Trans. Nucl. Sci. NS-17: No. 3, 139-48(Jun 1970), 1970-01, Vol.17 (3), p.139-148
Hauptverfasser:	Martini, M., McMath, T. A., Fowler, I. L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Detectors EFFICIENCY Electron mobility Germanium Leakage current N26110 -Instrumentation-Radiation Detection Instruments- General Detectors & Monitors OPERATION RADIATION DETECTORS, SEMICONDUCTOR/performance of, survey on temperature effects on RESOLUTION Rivers SEMICONDUCTOR COUNTERS Silicon Spectroscopy TEMPERATURE Temperature dependence Temperature distribution Temperature sensors TIME
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