Control of Charge Transport Properties in Molybdenum Diselenide Field-Effect Transistors for Enhanced Noise-Margin and Inverter Characteristics

Ambipolar field-effect transistor (FET) capable of transporting both holes and electrons has the advantage of operating as both p-type and n-type with a single device depending on the voltage bias condition. Among transition metal dichalcogenides (TMDs), molybdenum diselenide (MoSe 2 ), which has am...

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Veröffentlicht in:	IEEE transactions on nanotechnology 2022, Vol.21, p.266-270
Hauptverfasser:	Kim, Seongjae, Hong, Seongin, Yoo, Hocheon
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing annealing process Charge transport CMOS digital inverter Electric variables Field effect transistors Inverters Molybdenum Molybdenum compounds molybdenum diselenide (MoSe<named-content xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" content-type="math" xlink:type="simple"> <inline-formula> <tex-math notation="LaTeX"> _2</tex-math> </inline-formula> </named-content>) Raman spectroscopy Semiconductor devices Silicon Statistical analysis Substrates Transistors Transition metal compounds Transition metal dichalcogenides (TMDs) Transport phenomena Transport properties Voltage measurement
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