Thermoelectric Effect in Graphene-Based Three-Terminal Junction

This paper presents the thermoelectric properties of graphene-based three-terminal junction on SiO 2 /Si substrate. The device demonstrates rectified output voltage while applying electrical (AC/DC) signal or temperature gradient at the input terminals. The voltage detection sensitivity of 736.38 mV...

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Veröffentlicht in:	IEEE transactions on nanotechnology 2021, Vol.20, p.733-738
Hauptverfasser:	Prakash, Krishna, Bansal, Shonak, Garg, Sahil, Thakur, Priyanka, Sharma, Kuldeep, Jain, Prince, Gupta, Neena, Kasjoo, S. R, Kumar, Sanjeev, Singh, Arun K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge carrier processes Charge carriers Conductivity Drift-diffusion model Electric potential Energy harvesting Graphene Junctions push-fix configuration push-pull configuration Rectifiers Seebeck effect Silicon dioxide Silicon substrates terahertz detector thermoelectric effect Thermoelectricity Voltage
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