Study on Inter Band and Inter Sub-Band Optical Transitions With Varying InAs/InGaAs Sub-Monolayer Quantum Dot Heterostructure Stacks Grown by Molecular Beam Epitaxy
Multiple stacking of sub-monolayer (SML) quantum dot (QD) heterostructure exhibits high optical quality and is seen in devices like lasers diodes, photodetectors, etc. In this study, we have investigated the optical and material characterization of InAs/InGaAs SML quantum dot (QD) heterostructure wi...
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| creator | Shriram, Saranya Reddy Kumar, Ravindra Panda, Debiprasad Saha, Jhuma Tongbram, Binita Mantri, Manas Ranjan Gazi, Sanowar Alam Mandal, Arjun Chakrabarti, Subhananda |
| description | Multiple stacking of sub-monolayer (SML) quantum dot (QD) heterostructure exhibits high optical quality and is seen in devices like lasers diodes, photodetectors, etc. In this study, we have investigated the optical and material characterization of InAs/InGaAs SML quantum dot (QD) heterostructure with multiple stacking layers (nSML) on GaAs substrates. The experimentally calculated PL emission energies were found to be 1.19, 1.13, 1.11 and 1.12 eV for 4, 6, 8 and 10 QD stacks at 19 K, excitation power of 1.1 kW/cm 2 (25 mW) respectively. A feature of increased strain with increasing nSML was verified experimentally by high-resolution X-ray diffraction (HRXRD) and Raman measurements as well. The experimental PL peak energy data were then validated with nextnano++ simulations based on Schrödinger - Poisson device solver. The hydrostatic and biaxial strain components were computed to correlate the experimental and simulation data. Hence with these enunciated understandings, we conclude that an ideal choice on the number of SML stacks that can be grown on a GaAs substrate was found to be 6 stacks, helpful to realize and fabricate QD based infrared photodetectors (QDIPs) devices in long wavelength regime. |
| doi_str_mv | 10.1109/TNANO.2020.3009597 |
| format | Article |
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The experimentally calculated PL emission energies were found to be 1.19, 1.13, 1.11 and 1.12 eV for 4, 6, 8 and 10 QD stacks at 19 K, excitation power of 1.1 kW/cm 2 (25 mW) respectively. A feature of increased strain with increasing nSML was verified experimentally by high-resolution X-ray diffraction (HRXRD) and Raman measurements as well. The experimental PL peak energy data were then validated with nextnano++ simulations based on Schrödinger - Poisson device solver. The hydrostatic and biaxial strain components were computed to correlate the experimental and simulation data. Hence with these enunciated understandings, we conclude that an ideal choice on the number of SML stacks that can be grown on a GaAs substrate was found to be 6 stacks, helpful to realize and fabricate QD based infrared photodetectors (QDIPs) devices in long wavelength regime.</description><identifier>ISSN: 1536-125X</identifier><identifier>EISSN: 1941-0085</identifier><identifier>DOI: 10.1109/TNANO.2020.3009597</identifier><identifier>CODEN: ITNECU</identifier><language>eng</language><publisher>PISCATAWAY: IEEE</publisher><subject>Computer simulation ; Engineering ; Engineering, Electrical & Electronic ; Epitaxial growth ; Gallium arsenide ; Heterostructures ; Indium arsenides ; Indium gallium arsenides ; infrared photodetectors ; Materials Science ; Materials Science, Multidisciplinary ; Molecular beam epitaxy ; Monolayers ; Nanoscience & Nanotechnology ; Photodetectors ; Photoluminescence ; Photometers ; Physical Sciences ; Physics ; Physics, Applied ; Quantum dots ; Science & Technology ; Science & Technology - Other Topics ; Stacking ; Stacks ; Strain ; sub-monolayer growth ; Substrates ; Technology ; Temperature measurement</subject><ispartof>IEEE transactions on nanotechnology, 2020, Vol.19, p.601-608</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>true</woscitedreferencessubscribed><woscitedreferencescount>7</woscitedreferencescount><woscitedreferencesoriginalsourcerecordid>wos000554882200002</woscitedreferencesoriginalsourcerecordid><citedby>FETCH-LOGICAL-c295t-f96d5deee5c0da32415ce520b77e1fc607db3fd88d39a504b6777b5130f751883</citedby><cites>FETCH-LOGICAL-c295t-f96d5deee5c0da32415ce520b77e1fc607db3fd88d39a504b6777b5130f751883</cites><orcidid>0000-0001-5336-4068 ; 0000-0001-8384-7706 ; 0000-0002-8459-0890</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9143511$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,4025,27928,27929,27930,28253,54763</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9143511$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Shriram, Saranya Reddy</creatorcontrib><creatorcontrib>Kumar, Ravindra</creatorcontrib><creatorcontrib>Panda, Debiprasad</creatorcontrib><creatorcontrib>Saha, Jhuma</creatorcontrib><creatorcontrib>Tongbram, Binita</creatorcontrib><creatorcontrib>Mantri, Manas Ranjan</creatorcontrib><creatorcontrib>Gazi, Sanowar Alam</creatorcontrib><creatorcontrib>Mandal, Arjun</creatorcontrib><creatorcontrib>Chakrabarti, Subhananda</creatorcontrib><title>Study on Inter Band and Inter Sub-Band Optical Transitions With Varying InAs/InGaAs Sub-Monolayer Quantum Dot Heterostructure Stacks Grown by Molecular Beam Epitaxy</title><title>IEEE transactions on nanotechnology</title><addtitle>TNANO</addtitle><addtitle>IEEE T NANOTECHNOL</addtitle><description>Multiple stacking of sub-monolayer (SML) quantum dot (QD) heterostructure exhibits high optical quality and is seen in devices like lasers diodes, photodetectors, etc. In this study, we have investigated the optical and material characterization of InAs/InGaAs SML quantum dot (QD) heterostructure with multiple stacking layers (nSML) on GaAs substrates. The experimentally calculated PL emission energies were found to be 1.19, 1.13, 1.11 and 1.12 eV for 4, 6, 8 and 10 QD stacks at 19 K, excitation power of 1.1 kW/cm 2 (25 mW) respectively. A feature of increased strain with increasing nSML was verified experimentally by high-resolution X-ray diffraction (HRXRD) and Raman measurements as well. The experimental PL peak energy data were then validated with nextnano++ simulations based on Schrödinger - Poisson device solver. The hydrostatic and biaxial strain components were computed to correlate the experimental and simulation data. Hence with these enunciated understandings, we conclude that an ideal choice on the number of SML stacks that can be grown on a GaAs substrate was found to be 6 stacks, helpful to realize and fabricate QD based infrared photodetectors (QDIPs) devices in long wavelength regime.</description><subject>Computer simulation</subject><subject>Engineering</subject><subject>Engineering, Electrical & Electronic</subject><subject>Epitaxial growth</subject><subject>Gallium arsenide</subject><subject>Heterostructures</subject><subject>Indium arsenides</subject><subject>Indium gallium arsenides</subject><subject>infrared photodetectors</subject><subject>Materials Science</subject><subject>Materials Science, Multidisciplinary</subject><subject>Molecular beam epitaxy</subject><subject>Monolayers</subject><subject>Nanoscience & Nanotechnology</subject><subject>Photodetectors</subject><subject>Photoluminescence</subject><subject>Photometers</subject><subject>Physical Sciences</subject><subject>Physics</subject><subject>Physics, Applied</subject><subject>Quantum dots</subject><subject>Science & Technology</subject><subject>Science & Technology - Other Topics</subject><subject>Stacking</subject><subject>Stacks</subject><subject>Strain</subject><subject>sub-monolayer growth</subject><subject>Substrates</subject><subject>Technology</subject><subject>Temperature measurement</subject><issn>1536-125X</issn><issn>1941-0085</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><sourceid>AOWDO</sourceid><recordid>eNqNkd9u0zAUxiMEEmPwAuPGEpco3bEdx_Fl6UZXaVuF2m3cRY7jQEZqF__RyPvwoLjNtGsuLB9b3-879vmy7AzDDGMQ59vb-e16RoDAjAIIJvir7ASLAucAFXudakbLHBP2_W32zvtHAMxLVp1kfzchtiOyBq1M0A59kaZFhzUdN7HJj1frfeiVHNDWSeP70Fvj0UMffqJ76cbe_Ej6uT9fmaWc-yN1Y40d5Jg8vkVpQtyhCxvQlU6u1gcXVYhOo02Q6pdHS2efDGpGdGMHreIg00O03KHLfR_kn_F99qaTg9cfnvfT7O7r5XZxlV-vl6vF_DpXRLCQd6JsWau1ZgpaSUmBmdKMQMO5xp0qgbcN7dqqaqmQDIqm5Jw3DFPoOMNVRU-zT5Pv3tnfUftQP9roTGpZk4IIAYQBTyoyqVT6iXe6q_eu36Ux1BjqQxr1MY36kEb9nEaCPk_Qk25s51WvjdIvIAAwVlQVIakCktTV_6sXaUaHQBY2mpDQjxPap0G8IAIXlGFM_wHMAaim</recordid><startdate>2020</startdate><enddate>2020</enddate><creator>Shriram, Saranya Reddy</creator><creator>Kumar, Ravindra</creator><creator>Panda, Debiprasad</creator><creator>Saha, Jhuma</creator><creator>Tongbram, Binita</creator><creator>Mantri, Manas Ranjan</creator><creator>Gazi, Sanowar Alam</creator><creator>Mandal, Arjun</creator><creator>Chakrabarti, Subhananda</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The experimentally calculated PL emission energies were found to be 1.19, 1.13, 1.11 and 1.12 eV for 4, 6, 8 and 10 QD stacks at 19 K, excitation power of 1.1 kW/cm 2 (25 mW) respectively. A feature of increased strain with increasing nSML was verified experimentally by high-resolution X-ray diffraction (HRXRD) and Raman measurements as well. The experimental PL peak energy data were then validated with nextnano++ simulations based on Schrödinger - Poisson device solver. The hydrostatic and biaxial strain components were computed to correlate the experimental and simulation data. Hence with these enunciated understandings, we conclude that an ideal choice on the number of SML stacks that can be grown on a GaAs substrate was found to be 6 stacks, helpful to realize and fabricate QD based infrared photodetectors (QDIPs) devices in long wavelength regime.</abstract><cop>PISCATAWAY</cop><pub>IEEE</pub><doi>10.1109/TNANO.2020.3009597</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0001-5336-4068</orcidid><orcidid>https://orcid.org/0000-0001-8384-7706</orcidid><orcidid>https://orcid.org/0000-0002-8459-0890</orcidid></addata></record> |
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| subjects | Computer simulation Engineering Engineering, Electrical & Electronic Epitaxial growth Gallium arsenide Heterostructures Indium arsenides Indium gallium arsenides infrared photodetectors Materials Science Materials Science, Multidisciplinary Molecular beam epitaxy Monolayers Nanoscience & Nanotechnology Photodetectors Photoluminescence Photometers Physical Sciences Physics Physics, Applied Quantum dots Science & Technology Science & Technology - Other Topics Stacking Stacks Strain sub-monolayer growth Substrates Technology Temperature measurement |
| title | Study on Inter Band and Inter Sub-Band Optical Transitions With Varying InAs/InGaAs Sub-Monolayer Quantum Dot Heterostructure Stacks Grown by Molecular Beam Epitaxy |
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