Performance of Junctionless and Inversion-Mode Thin-Film Transistors With Stacked Nanosheet Channels

This article comprehensively investigated a junctionless thin-film transistor (JL TFT) with stacked nanosheet (NS) channels. Through experiments, we 1) compared a JL TFT with a single NS channel and a JL TFT with stacked NS channels and 2) compared an inversion-mode TFT with stacked NS channels and...

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Veröffentlicht in:	IEEE transactions on nanotechnology 2020, Vol.19, p.84-88
Hauptverfasser:	Lin, Yu-Ru, Lin, Yu-Hsien, Chen, Yu-Fang, Hsu, Ya-Ting, Chen, Ya-Han, Huang, Yu-Hsien, Wu, Yung-Chun
Format:	Artikel
Sprache:	eng
Schlagworte:	CAD Channels Computer aided design Computer simulation Ions Junctionless (JL) Logic gates Mathematical model nanosheet (NS) Nanosheets Semiconductor devices Semiconductor process modeling Silicon stacked structure Technology utilization Thin film transistors thin-film transistor (TFT) Three-dimensional displays three-dimensional technology computer aided design (3D TCAD)
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