A Quasi-3-D Scaling Length Model for Trapezoidal FinFET and Its Application to Subthreshold Behavior Analysis

Based on the equivalent channel width and equivalent number of gates, a quasi-3-D scaling length model for the trapezoidal FinFET (TzFinFET) is developed. By accounting for the coupling effects between equivalent double-gate FET and single-gate FET, the scaling length of TzFinFET can be accurately p...

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Veröffentlicht in:	IEEE transactions on nanotechnology 2017-03, Vol.16 (2), p.281-289
Hauptverfasser:	Gao, Hong-Wun, Wang, Yeong-Her, Chiang, Te-Kuang
Format:	Artikel
Sprache:	eng
Schlagworte:	Degradation Electric potential Equivalent channel width equivalent number of gate FinFETs inclination angle Logic gates Mathematical model quasi-3-D scaling equation scaling factor scaling length scaling theory subthreshold swing Threshold voltage trapezoidal FinFET
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