Flash Light Sintering of Silver Nanoink for Inkjet-Printed Thin-Film Transistor on Flexible Substrate
In this paper, we study flash light sintering of inkjet-printed silver nanoink and show its application in printed and flexible thin film transistors. Flash method, which uses pulsed light to sinter metal nanoparticles, is a very fast and low-temperature sintering method. Hence, it facilitates in qu...
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Veröffentlicht in: | IEEE transactions on nanotechnology 2017-05, Vol.16 (3), p.375-382 |
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description | In this paper, we study flash light sintering of inkjet-printed silver nanoink and show its application in printed and flexible thin film transistors. Flash method, which uses pulsed light to sinter metal nanoparticles, is a very fast and low-temperature sintering method. Hence, it facilitates in quick fabrication of low cost, flexible electronic devices. In the current work, various silver patterns were obtained by inkjet printing of silver nanoink on flexible substrate and then the patterns were sintered by flash method. Several flash sintering parameters were carefully optimized to achieve high electrical conductivity. In next stage, such printed and flash sintered silver patterns were used as source and drain contacts in thin-film transistor. Indium tin oxide coated polyethylene terephthalate sheet was used as substrate as well as bottom gate contact in transistor structure. On the other hand, polystyrene and pentacene were used in gate dielectric and channel layer, respectively. Such printed transistor with channel length of 28 μm and width of 68 μm exhibited field effect mobility of 0.09 cm 2 V -1 s -1 and ON/OFF ratio on the order of 10 6 . Finally, a comparative study was made between transistor performance with printed silver contacts and vacuum deposited silver contacts to ensure printing and sintering steps do not cause any notable degradation to the organic semiconducting layer. |
doi_str_mv | 10.1109/TNANO.2017.2658341 |
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Flash method, which uses pulsed light to sinter metal nanoparticles, is a very fast and low-temperature sintering method. Hence, it facilitates in quick fabrication of low cost, flexible electronic devices. In the current work, various silver patterns were obtained by inkjet printing of silver nanoink on flexible substrate and then the patterns were sintered by flash method. Several flash sintering parameters were carefully optimized to achieve high electrical conductivity. In next stage, such printed and flash sintered silver patterns were used as source and drain contacts in thin-film transistor. Indium tin oxide coated polyethylene terephthalate sheet was used as substrate as well as bottom gate contact in transistor structure. On the other hand, polystyrene and pentacene were used in gate dielectric and channel layer, respectively. Such printed transistor with channel length of 28 μm and width of 68 μm exhibited field effect mobility of 0.09 cm 2 V -1 s -1 and ON/OFF ratio on the order of 10 6 . Finally, a comparative study was made between transistor performance with printed silver contacts and vacuum deposited silver contacts to ensure printing and sintering steps do not cause any notable degradation to the organic semiconducting layer.</description><identifier>ISSN: 1536-125X</identifier><identifier>EISSN: 1941-0085</identifier><identifier>DOI: 10.1109/TNANO.2017.2658341</identifier><identifier>CODEN: ITNECU</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Comparative studies ; Conductivity ; Digital printing ; Electric contacts ; Electrical resistivity ; Flashlights ; flexible electronics ; Indium tin oxides ; Ink ; Inkjet printing ; Low temperature ; Nanoparticles ; organic thin-film transistors ; Polyethylene terephthalate ; Polystyrene resins ; Printing ; Resistance sintering ; Semiconductor devices ; Silver ; Sintering ; Substrates ; Thin film transistors ; Transistors</subject><ispartof>IEEE transactions on nanotechnology, 2017-05, Vol.16 (3), p.375-382</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c344t-5b69663ad71239c7875eab9a7db3093cfc1803b21fcad0100dca3381b25a31393</citedby><cites>FETCH-LOGICAL-c344t-5b69663ad71239c7875eab9a7db3093cfc1803b21fcad0100dca3381b25a31393</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7833072$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7833072$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Sarkar, Sudipta Kumar</creatorcontrib><creatorcontrib>Gupta, Harshad</creatorcontrib><creatorcontrib>Gupta, Dipti</creatorcontrib><title>Flash Light Sintering of Silver Nanoink for Inkjet-Printed Thin-Film Transistor on Flexible Substrate</title><title>IEEE transactions on nanotechnology</title><addtitle>TNANO</addtitle><description>In this paper, we study flash light sintering of inkjet-printed silver nanoink and show its application in printed and flexible thin film transistors. Flash method, which uses pulsed light to sinter metal nanoparticles, is a very fast and low-temperature sintering method. Hence, it facilitates in quick fabrication of low cost, flexible electronic devices. In the current work, various silver patterns were obtained by inkjet printing of silver nanoink on flexible substrate and then the patterns were sintered by flash method. Several flash sintering parameters were carefully optimized to achieve high electrical conductivity. In next stage, such printed and flash sintered silver patterns were used as source and drain contacts in thin-film transistor. Indium tin oxide coated polyethylene terephthalate sheet was used as substrate as well as bottom gate contact in transistor structure. On the other hand, polystyrene and pentacene were used in gate dielectric and channel layer, respectively. Such printed transistor with channel length of 28 μm and width of 68 μm exhibited field effect mobility of 0.09 cm 2 V -1 s -1 and ON/OFF ratio on the order of 10 6 . Finally, a comparative study was made between transistor performance with printed silver contacts and vacuum deposited silver contacts to ensure printing and sintering steps do not cause any notable degradation to the organic semiconducting layer.</description><subject>Comparative studies</subject><subject>Conductivity</subject><subject>Digital printing</subject><subject>Electric contacts</subject><subject>Electrical resistivity</subject><subject>Flashlights</subject><subject>flexible electronics</subject><subject>Indium tin oxides</subject><subject>Ink</subject><subject>Inkjet printing</subject><subject>Low temperature</subject><subject>Nanoparticles</subject><subject>organic thin-film transistors</subject><subject>Polyethylene terephthalate</subject><subject>Polystyrene resins</subject><subject>Printing</subject><subject>Resistance sintering</subject><subject>Semiconductor devices</subject><subject>Silver</subject><subject>Sintering</subject><subject>Substrates</subject><subject>Thin film transistors</subject><subject>Transistors</subject><issn>1536-125X</issn><issn>1941-0085</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kF1LwzAUhoMoOKd_QG8CXnfmJG3TXI5hdTA2YRW8C2mbbtm6dCad6L83c8Ob8wHPew48CN0DGQEQ8VTMx_PFiBLgI5omGYvhAg1AxBARkiWXYU5YGgFNPq7RjfcbEsjADZDOW-XXeGZW6x4vje21M3aFuyYs7Zd2eK5sZ-wWN53DU7vd6D56c0euxsXa2Cg37Q4XTllvfB-YzuK81d-mbDVeHkrfO9XrW3TVqNbru3Mfovf8uZi8RrPFy3QynkUVi-M-SspUpClTNQfKRMUznmhVCsXrkhHBqqaCjLCSQlOpmgAhdaUYy6CkiWLABBuix9Pdves-D9r3ctMdnA0vJWQi4zwUFih6oirXee90I_fO7JT7kUDkUaf80ymPOuVZZwg9nEJGa_0f4OEc4ZT9Ai8VcVo</recordid><startdate>201705</startdate><enddate>201705</enddate><creator>Sarkar, Sudipta Kumar</creator><creator>Gupta, Harshad</creator><creator>Gupta, Dipti</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>201705</creationdate><title>Flash Light Sintering of Silver Nanoink for Inkjet-Printed Thin-Film Transistor on Flexible Substrate</title><author>Sarkar, Sudipta Kumar ; Gupta, Harshad ; Gupta, Dipti</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c344t-5b69663ad71239c7875eab9a7db3093cfc1803b21fcad0100dca3381b25a31393</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Comparative studies</topic><topic>Conductivity</topic><topic>Digital printing</topic><topic>Electric contacts</topic><topic>Electrical resistivity</topic><topic>Flashlights</topic><topic>flexible electronics</topic><topic>Indium tin oxides</topic><topic>Ink</topic><topic>Inkjet printing</topic><topic>Low temperature</topic><topic>Nanoparticles</topic><topic>organic thin-film transistors</topic><topic>Polyethylene terephthalate</topic><topic>Polystyrene resins</topic><topic>Printing</topic><topic>Resistance sintering</topic><topic>Semiconductor devices</topic><topic>Silver</topic><topic>Sintering</topic><topic>Substrates</topic><topic>Thin film transistors</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sarkar, Sudipta Kumar</creatorcontrib><creatorcontrib>Gupta, Harshad</creatorcontrib><creatorcontrib>Gupta, Dipti</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sarkar, Sudipta Kumar</au><au>Gupta, Harshad</au><au>Gupta, Dipti</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Flash Light Sintering of Silver Nanoink for Inkjet-Printed Thin-Film Transistor on Flexible Substrate</atitle><jtitle>IEEE transactions on nanotechnology</jtitle><stitle>TNANO</stitle><date>2017-05</date><risdate>2017</risdate><volume>16</volume><issue>3</issue><spage>375</spage><epage>382</epage><pages>375-382</pages><issn>1536-125X</issn><eissn>1941-0085</eissn><coden>ITNECU</coden><abstract>In this paper, we study flash light sintering of inkjet-printed silver nanoink and show its application in printed and flexible thin film transistors. Flash method, which uses pulsed light to sinter metal nanoparticles, is a very fast and low-temperature sintering method. Hence, it facilitates in quick fabrication of low cost, flexible electronic devices. In the current work, various silver patterns were obtained by inkjet printing of silver nanoink on flexible substrate and then the patterns were sintered by flash method. Several flash sintering parameters were carefully optimized to achieve high electrical conductivity. In next stage, such printed and flash sintered silver patterns were used as source and drain contacts in thin-film transistor. Indium tin oxide coated polyethylene terephthalate sheet was used as substrate as well as bottom gate contact in transistor structure. On the other hand, polystyrene and pentacene were used in gate dielectric and channel layer, respectively. Such printed transistor with channel length of 28 μm and width of 68 μm exhibited field effect mobility of 0.09 cm 2 V -1 s -1 and ON/OFF ratio on the order of 10 6 . Finally, a comparative study was made between transistor performance with printed silver contacts and vacuum deposited silver contacts to ensure printing and sintering steps do not cause any notable degradation to the organic semiconducting layer.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNANO.2017.2658341</doi><tpages>8</tpages></addata></record> |
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subjects | Comparative studies Conductivity Digital printing Electric contacts Electrical resistivity Flashlights flexible electronics Indium tin oxides Ink Inkjet printing Low temperature Nanoparticles organic thin-film transistors Polyethylene terephthalate Polystyrene resins Printing Resistance sintering Semiconductor devices Silver Sintering Substrates Thin film transistors Transistors |
title | Flash Light Sintering of Silver Nanoink for Inkjet-Printed Thin-Film Transistor on Flexible Substrate |
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