High-Frequency Microwave Detection With GaN HEMTs in the Subthreshold Regime

The behavior of GaN-based high-electron-mobility transistors (HEMTs) as microwave zero-bias detectors is very dependent on the configuration of the bias (current or voltage), the operation temperature, and whether the radio-frequency power is fed in the drain or the gate terminal. When the signal is...

Ausführliche Beschreibung