W -Band GaN HEMT Frequency Multipliers

This article presents three W -band frequency multiplier monolithically microwave integrated circuits (MMICs) designed in a 40-nm gallium nitride (GaN) on SiC process. Two doublers with fundamental-frequency input from 37.5 to 55 GHz both use two 4 \times 37.5 \mu m HEMTs. One is a single-ended...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 2023-10, Vol.71 (10), p.1-10
Hauptverfasser:	Sonnenberg, Timothy, Verploegh, Shane, Pinto, Mauricio, Popovic, Zoya
Format:	Artikel
Sprache:	eng
Schlagworte:	<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> W</tex-math> </inline-formula>-band Broadband Circuit design Conversion doubler Frequency conversion frequency multiplier Frequency multipliers Gain gallium nitride (GaN) Gallium nitrides Harmonic analysis HEMTs High electron mobility transistors Integrated circuits MMIC (circuits) monolithically microwave integrated circuit (MMIC) Power consumption Power generation Power harmonic filters Resonant frequencies stability Topology tripler
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