Conductive Bridging-Based Memristive RF Switches on a Silicon Substrate

Three RF switches and a phase shifter are proposed using the conductive bridging random access memory (CBRAM) technique. The fabrication process is developed with the Nafion membrane on a high-resistivity silicon substrate. The equivalent circuit model is established for each memristive RF switch. T...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 2022-01, Vol.70 (1), p.24-34
Hauptverfasser: Xu, Zong-Rui, Ye, Yi-Feng, Xia, Bin, Wu, Lin-Sheng, Mao, Jun-Fa, Jia, Yue-Yang
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Sprache:eng
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