An S -Band GaAs Multifunction Chip for Transmit/Receive Modules

In this article, a highly integrated S-band prototype multifunction chip (MFC) featuring high integration level, bidirectional operation, reduced number of pads, and optimized power consumption is demonstrated with a GaAs 0.15-μm pHEMT technology. In order to pursue a high integration level, the MFC...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on microwave theory and techniques 2020-01, Vol.68 (1), p.398-404
Hauptverfasser:	Chen, Kefan, Wang, Xiangdong, Cheng, Xu, Han, Jiangan, Chen, Fengjun, Deng, Xianjin
Format:	Artikel
Sprache:	eng
Schlagworte:	Bidirectional mixer double-conversion GaAs Gain Gallium arsenide Mixers multifunction chip (MFC) pHEMT PHEMTs Radio frequency Schottky diodes Simulation
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!