Measurement and Modeling of Heterogeneous Chip-Scale Interconnections

We present precision scattering-parameter measurements of chip-to-chip connections in heterogeneous integrated circuits: indium phosphide or gallium nitride "chiplets" mounted on Silicon Complementary Metal-Oxide-Semiconductor carrier chips. We demonstrate methodology, experimental results...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 2018-12, Vol.66 (12), p.5358-5364
Hauptverfasser:	Chamberlin, Richard A., Williams, Dylan F.
Format:	Artikel
Sprache:	eng
Schlagworte:	3-D heterogeneous integration and packaging Calibration CMOS CMOS technology Gallium nitride gallium nitride (GaN) Gallium nitrides III-V semiconductor materials Indium phosphide indium phosphide (InP) Integrated circuit interconnections Integrated circuits Interconnections Mathematical models Metal oxides Modelling network analysis Phosphides Planes S parameters Scattering Semiconductors thru-reflect-line (TRL) calibration
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