A Fully Integrated 60-GHz 5-Gb/s QPSK Transceiver With T/R Switch in 65-nm CMOS
A fully integrated 60-GHz 5-Gb/s quadrature phase-shift keying (QPSK) transceiver with the transmit/receive (T/R) switch in 65-nm CMOS is presented. By utilizing the co-design of the T/R switch with the power amplifier (PA)/low-noise amplifier, π-type wideband passive network technique, as well as t...
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Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2014-12, Vol.62 (12), p.3131-3145 |
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creator | Kuang, Lixue Yu, Xiaobao Jia, Haikun Chen, Lei Zhu, Wei Wei, Meng Song, Zheng Wang, Zhihua Chi, Baoyong |
description | A fully integrated 60-GHz 5-Gb/s quadrature phase-shift keying (QPSK) transceiver with the transmit/receive (T/R) switch in 65-nm CMOS is presented. By utilizing the co-design of the T/R switch with the power amplifier (PA)/low-noise amplifier, π-type wideband passive network technique, as well as the modified distributed-amplifier-based PA, the RF bandwidth of the transmitter (TX)/receiver (RX) is extended to 5 GHz. An inductorless wideband programmable gain amplifier with negative capacitive neutralization, consisting of two modified Cherry-Hooper amplifier stages, provides 18-dB variable gain range with enough bandwidth. Due to the proposed bandwidth extension techniques, the measured double-side link bandwidth of the TX/RX is wider than 5 GHz so that 5-Gb/s QPSK communication could be supported. A direct QPSK modulator and mixed-signal QPSK demodulator are integrated to avoid the high-power high-complexity analog-digital converter/digital-analog converter and high-speed digital baseband processing. Together with the integrated T/R switch, the power consumption and the cost of the transceiver are significantly lowered while achieving up to 5-Gb/s data rate. The local oscillating signals and various clocks are provided by a fully differential phase-locked loop frequency synthesizer with -97.2-dBc/Hz phase noise at 1-MHz offset from a 40-GHz carrier. The measured error vector magnitude of the TX is -21.9 dB, while the bit error rate of the RX with a -52-dBm sine-wave input is below 8e-7 when transmitting/receiving 5-Gb/s data. The transceiver is powered by 1.0- and 1.2-V supply (except the phase-frequency detector and charge-pump in the frequency synthesizer, which are powered by a 2.5-V supply) and consumes 135 mW in the TX mode and 176 mW in the RX mode, with a chip area of 3 mm × 2 mm. |
doi_str_mv | 10.1109/TMTT.2014.2364589 |
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By utilizing the co-design of the T/R switch with the power amplifier (PA)/low-noise amplifier, π-type wideband passive network technique, as well as the modified distributed-amplifier-based PA, the RF bandwidth of the transmitter (TX)/receiver (RX) is extended to 5 GHz. An inductorless wideband programmable gain amplifier with negative capacitive neutralization, consisting of two modified Cherry-Hooper amplifier stages, provides 18-dB variable gain range with enough bandwidth. Due to the proposed bandwidth extension techniques, the measured double-side link bandwidth of the TX/RX is wider than 5 GHz so that 5-Gb/s QPSK communication could be supported. A direct QPSK modulator and mixed-signal QPSK demodulator are integrated to avoid the high-power high-complexity analog-digital converter/digital-analog converter and high-speed digital baseband processing. Together with the integrated T/R switch, the power consumption and the cost of the transceiver are significantly lowered while achieving up to 5-Gb/s data rate. The local oscillating signals and various clocks are provided by a fully differential phase-locked loop frequency synthesizer with -97.2-dBc/Hz phase noise at 1-MHz offset from a 40-GHz carrier. The measured error vector magnitude of the TX is -21.9 dB, while the bit error rate of the RX with a -52-dBm sine-wave input is below 8e-7 when transmitting/receiving 5-Gb/s data. The transceiver is powered by 1.0- and 1.2-V supply (except the phase-frequency detector and charge-pump in the frequency synthesizer, which are powered by a 2.5-V supply) and consumes 135 mW in the TX mode and 176 mW in the RX mode, with a chip area of 3 mm × 2 mm.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2014.2364589</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>60 GHz ; CMOS ; Frequency synthesizers ; millimeter wave ; Millimeter wave technology ; Phase shift keying ; Switches ; Switching circuits ; transceiver ; Transceivers ; Wideband</subject><ispartof>IEEE transactions on microwave theory and techniques, 2014-12, Vol.62 (12), p.3131-3145</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Dec 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c363t-42bb6ce95d9b118b8ed69f4a1473f29aeafea23f95eef9ef32f9b4204da77f4f3</citedby><cites>FETCH-LOGICAL-c363t-42bb6ce95d9b118b8ed69f4a1473f29aeafea23f95eef9ef32f9b4204da77f4f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6948286$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6948286$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kuang, Lixue</creatorcontrib><creatorcontrib>Yu, Xiaobao</creatorcontrib><creatorcontrib>Jia, Haikun</creatorcontrib><creatorcontrib>Chen, Lei</creatorcontrib><creatorcontrib>Zhu, Wei</creatorcontrib><creatorcontrib>Wei, Meng</creatorcontrib><creatorcontrib>Song, Zheng</creatorcontrib><creatorcontrib>Wang, Zhihua</creatorcontrib><creatorcontrib>Chi, Baoyong</creatorcontrib><title>A Fully Integrated 60-GHz 5-Gb/s QPSK Transceiver With T/R Switch in 65-nm CMOS</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>A fully integrated 60-GHz 5-Gb/s quadrature phase-shift keying (QPSK) transceiver with the transmit/receive (T/R) switch in 65-nm CMOS is presented. By utilizing the co-design of the T/R switch with the power amplifier (PA)/low-noise amplifier, π-type wideband passive network technique, as well as the modified distributed-amplifier-based PA, the RF bandwidth of the transmitter (TX)/receiver (RX) is extended to 5 GHz. An inductorless wideband programmable gain amplifier with negative capacitive neutralization, consisting of two modified Cherry-Hooper amplifier stages, provides 18-dB variable gain range with enough bandwidth. Due to the proposed bandwidth extension techniques, the measured double-side link bandwidth of the TX/RX is wider than 5 GHz so that 5-Gb/s QPSK communication could be supported. A direct QPSK modulator and mixed-signal QPSK demodulator are integrated to avoid the high-power high-complexity analog-digital converter/digital-analog converter and high-speed digital baseband processing. Together with the integrated T/R switch, the power consumption and the cost of the transceiver are significantly lowered while achieving up to 5-Gb/s data rate. The local oscillating signals and various clocks are provided by a fully differential phase-locked loop frequency synthesizer with -97.2-dBc/Hz phase noise at 1-MHz offset from a 40-GHz carrier. The measured error vector magnitude of the TX is -21.9 dB, while the bit error rate of the RX with a -52-dBm sine-wave input is below 8e-7 when transmitting/receiving 5-Gb/s data. The transceiver is powered by 1.0- and 1.2-V supply (except the phase-frequency detector and charge-pump in the frequency synthesizer, which are powered by a 2.5-V supply) and consumes 135 mW in the TX mode and 176 mW in the RX mode, with a chip area of 3 mm × 2 mm.</description><subject>60 GHz</subject><subject>CMOS</subject><subject>Frequency synthesizers</subject><subject>millimeter wave</subject><subject>Millimeter wave technology</subject><subject>Phase shift keying</subject><subject>Switches</subject><subject>Switching circuits</subject><subject>transceiver</subject><subject>Transceivers</subject><subject>Wideband</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kF1LAkEUhocoyKwfEN0MdD0637tzKZIfpFi50eUwu57JFV1tZi3s17eidHV44XnfAw9C94x2GKOmm02zrMMpkx0utFSpuUAtplRCjE7oJWpRylJiZEqv0U2MqyZKRdMWmvXwYL9eH_C4quEzuBoWWFMyHP1iRYZ5N-LXl_kzzoKrYgHlNwT8UdZLnHXf8PynrIslLiusFak2uD-dzW_RlXfrCHfn20bvg6esPyKT2XDc701IIbSoieR5rgswamFyxtI8hYU2XjomE-G5ceA8OC68UQDegBfcm1xyKhcuSbz0oo0eT7u7sP3aQ6ztarsPVfPSMi0oSxLFZUOxE1WEbYwBvN2FcuPCwTJqj97s0Zs9erNnb03n4dQpAeCf1407nmrxBz8gZk8</recordid><startdate>20141201</startdate><enddate>20141201</enddate><creator>Kuang, Lixue</creator><creator>Yu, Xiaobao</creator><creator>Jia, Haikun</creator><creator>Chen, Lei</creator><creator>Zhu, Wei</creator><creator>Wei, Meng</creator><creator>Song, Zheng</creator><creator>Wang, Zhihua</creator><creator>Chi, Baoyong</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20141201</creationdate><title>A Fully Integrated 60-GHz 5-Gb/s QPSK Transceiver With T/R Switch in 65-nm CMOS</title><author>Kuang, Lixue ; Yu, Xiaobao ; Jia, Haikun ; Chen, Lei ; Zhu, Wei ; Wei, Meng ; Song, Zheng ; Wang, Zhihua ; Chi, Baoyong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c363t-42bb6ce95d9b118b8ed69f4a1473f29aeafea23f95eef9ef32f9b4204da77f4f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>60 GHz</topic><topic>CMOS</topic><topic>Frequency synthesizers</topic><topic>millimeter wave</topic><topic>Millimeter wave technology</topic><topic>Phase shift keying</topic><topic>Switches</topic><topic>Switching circuits</topic><topic>transceiver</topic><topic>Transceivers</topic><topic>Wideband</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kuang, Lixue</creatorcontrib><creatorcontrib>Yu, Xiaobao</creatorcontrib><creatorcontrib>Jia, Haikun</creatorcontrib><creatorcontrib>Chen, Lei</creatorcontrib><creatorcontrib>Zhu, Wei</creatorcontrib><creatorcontrib>Wei, Meng</creatorcontrib><creatorcontrib>Song, Zheng</creatorcontrib><creatorcontrib>Wang, Zhihua</creatorcontrib><creatorcontrib>Chi, Baoyong</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library Online</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kuang, Lixue</au><au>Yu, Xiaobao</au><au>Jia, Haikun</au><au>Chen, Lei</au><au>Zhu, Wei</au><au>Wei, Meng</au><au>Song, Zheng</au><au>Wang, Zhihua</au><au>Chi, Baoyong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Fully Integrated 60-GHz 5-Gb/s QPSK Transceiver With T/R Switch in 65-nm CMOS</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2014-12-01</date><risdate>2014</risdate><volume>62</volume><issue>12</issue><spage>3131</spage><epage>3145</epage><pages>3131-3145</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>A fully integrated 60-GHz 5-Gb/s quadrature phase-shift keying (QPSK) transceiver with the transmit/receive (T/R) switch in 65-nm CMOS is presented. By utilizing the co-design of the T/R switch with the power amplifier (PA)/low-noise amplifier, π-type wideband passive network technique, as well as the modified distributed-amplifier-based PA, the RF bandwidth of the transmitter (TX)/receiver (RX) is extended to 5 GHz. An inductorless wideband programmable gain amplifier with negative capacitive neutralization, consisting of two modified Cherry-Hooper amplifier stages, provides 18-dB variable gain range with enough bandwidth. Due to the proposed bandwidth extension techniques, the measured double-side link bandwidth of the TX/RX is wider than 5 GHz so that 5-Gb/s QPSK communication could be supported. A direct QPSK modulator and mixed-signal QPSK demodulator are integrated to avoid the high-power high-complexity analog-digital converter/digital-analog converter and high-speed digital baseband processing. Together with the integrated T/R switch, the power consumption and the cost of the transceiver are significantly lowered while achieving up to 5-Gb/s data rate. The local oscillating signals and various clocks are provided by a fully differential phase-locked loop frequency synthesizer with -97.2-dBc/Hz phase noise at 1-MHz offset from a 40-GHz carrier. The measured error vector magnitude of the TX is -21.9 dB, while the bit error rate of the RX with a -52-dBm sine-wave input is below 8e-7 when transmitting/receiving 5-Gb/s data. The transceiver is powered by 1.0- and 1.2-V supply (except the phase-frequency detector and charge-pump in the frequency synthesizer, which are powered by a 2.5-V supply) and consumes 135 mW in the TX mode and 176 mW in the RX mode, with a chip area of 3 mm × 2 mm.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TMTT.2014.2364589</doi><tpages>15</tpages></addata></record> |
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subjects | 60 GHz CMOS Frequency synthesizers millimeter wave Millimeter wave technology Phase shift keying Switches Switching circuits transceiver Transceivers Wideband |
title | A Fully Integrated 60-GHz 5-Gb/s QPSK Transceiver With T/R Switch in 65-nm CMOS |
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