LDMOS Technology for RF Power Amplifiers

We show the status of laterally diffused metal-oxide-semiconductor (LDMOS) technology, which has been the device of choice for RF power applications for more than one decade. LDMOS fulfills the requirements for a wide range of class AB and pulsed applications, such as base station, broadcast, and mi...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 2012-06, Vol.60 (6), p.1755-1763
Hauptverfasser:	Theeuwen, S. J. C. H., Qureshi, J. H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Breakdown voltage Broadcasting Capacitance Devices Diffusion Drains Logic gates Metals Microwave amplifiers Microwaves MOSFET power amplifiers (PAs) Performance evaluation power amplifiers Radio frequency Reliability semiconductor device fabrication State of the art Stations
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