Two-Way Current-Combining W-Band Power Amplifier in 65-nm CMOS

This paper presents a two-way current-combining-based W -band power amplifier (PA) in 65-nm CMOS technology. An analytical model and design method for W -band power combiners are presented, which indicates current combining is preferred for millimeter-wave frequencies due to a good current handling...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 2012-05, Vol.60 (5), p.1365-1374
Hauptverfasser:	Gu, Q. J., Zhiwei Xu, Chang, M-C F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Applied sciences Channels Circuit properties CMOS CMOS integrated circuits Couplings Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Gain Impedance Integrated circuits Logic gates Mathematical analysis Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves Noise levels Power amplifier (PA) Power amplifiers power combiner Power combiners Power generation Resistance Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices W -band Windings
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