A low phase-noise CMOS VCO with harmonic tuned LC tank
This paper presents a phase-noise reduction technique for voltage-controlled oscillators (VCOs) using a harmonic tuned (HT) LC tank. The phase-noise suppression is achieved through almost rectangular-shaped voltage at the switching differential cell, which effectively maximizes the slope of the swit...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2006-07, Vol.54 (7), p.2917-2924 |
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| creator | KIM, Huijung RYU, Seonghan CHUNG, Yujin CHOI, Jinsung KIM, Bumman |
| description | This paper presents a phase-noise reduction technique for voltage-controlled oscillators (VCOs) using a harmonic tuned (HT) LC tank. The phase-noise suppression is achieved through almost rectangular-shaped voltage at the switching differential cell, which effectively maximizes the slope of the switching cell output voltage at a zero crossing point. In addition, the proposed technique also suppresses the down-conversion of the noise around the second harmonic frequency by the second harmonic short of the tank. One second HT VCO and two third HT VCOs are designed and implemented to evaluate the concept using a 0.35- and 0.13-/spl mu/m CMOS process. The figure-of-merit (FOM) of the second HT VCO, third HT VCO1, and third HT VCO2 are -180.7, -183.7, and -189.5, respectively. The best FOM performance of the VCO has phase noises of -100.4, -132.0, and -140.8dBc/Hz at 100-kHz, 1-MHz, and 3-MHz offset frequencies at the 2-GHz carrier, respectively. This VCO consumes 3.29 mA from a 1.8-V supply with the silicon area of 500 /spl mu/m/spl times/750 /spl mu/m. |
| doi_str_mv | 10.1109/TMTT.2006.877439 |
| format | Article |
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The phase-noise suppression is achieved through almost rectangular-shaped voltage at the switching differential cell, which effectively maximizes the slope of the switching cell output voltage at a zero crossing point. In addition, the proposed technique also suppresses the down-conversion of the noise around the second harmonic frequency by the second harmonic short of the tank. One second HT VCO and two third HT VCOs are designed and implemented to evaluate the concept using a 0.35- and 0.13-/spl mu/m CMOS process. The figure-of-merit (FOM) of the second HT VCO, third HT VCO1, and third HT VCO2 are -180.7, -183.7, and -189.5, respectively. The best FOM performance of the VCO has phase noises of -100.4, -132.0, and -140.8dBc/Hz at 100-kHz, 1-MHz, and 3-MHz offset frequencies at the 2-GHz carrier, respectively. This VCO consumes 3.29 mA from a 1.8-V supply with the silicon area of 500 /spl mu/m/spl times/750 /spl mu/m.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2006.877439</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>1f noise ; Applied sciences ; Circuit properties ; CMOS ; CMOS technology ; Companies ; Electric potential ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Frequency ; harmonic tuned (HT) LC tank ; Harmonics ; Heat treatment ; Information technology ; low phase noise ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Noise ; Oscillators, resonators, synthetizers ; Phase noise ; Semiconductor device noise ; Silicon ; Switching ; Tanks ; Voltage ; voltage-controlled oscillator (VCO) ; Voltage-controlled oscillators ; Zero voltage switching</subject><ispartof>IEEE transactions on microwave theory and techniques, 2006-07, Vol.54 (7), p.2917-2924</ispartof><rights>2006 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2006</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c352t-60a56ba1ef472c62af41d152ae693863cde7773cf5d00c5bf4f81f1192a5e49b3</citedby><cites>FETCH-LOGICAL-c352t-60a56ba1ef472c62af41d152ae693863cde7773cf5d00c5bf4f81f1192a5e49b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1650429$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,792,23909,23910,25118,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1650429$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17972811$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>KIM, Huijung</creatorcontrib><creatorcontrib>RYU, Seonghan</creatorcontrib><creatorcontrib>CHUNG, Yujin</creatorcontrib><creatorcontrib>CHOI, Jinsung</creatorcontrib><creatorcontrib>KIM, Bumman</creatorcontrib><title>A low phase-noise CMOS VCO with harmonic tuned LC tank</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>This paper presents a phase-noise reduction technique for voltage-controlled oscillators (VCOs) using a harmonic tuned (HT) LC tank. The phase-noise suppression is achieved through almost rectangular-shaped voltage at the switching differential cell, which effectively maximizes the slope of the switching cell output voltage at a zero crossing point. In addition, the proposed technique also suppresses the down-conversion of the noise around the second harmonic frequency by the second harmonic short of the tank. One second HT VCO and two third HT VCOs are designed and implemented to evaluate the concept using a 0.35- and 0.13-/spl mu/m CMOS process. The figure-of-merit (FOM) of the second HT VCO, third HT VCO1, and third HT VCO2 are -180.7, -183.7, and -189.5, respectively. The best FOM performance of the VCO has phase noises of -100.4, -132.0, and -140.8dBc/Hz at 100-kHz, 1-MHz, and 3-MHz offset frequencies at the 2-GHz carrier, respectively. This VCO consumes 3.29 mA from a 1.8-V supply with the silicon area of 500 /spl mu/m/spl times/750 /spl mu/m.</description><subject>1f noise</subject><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>CMOS</subject><subject>CMOS technology</subject><subject>Companies</subject><subject>Electric potential</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Frequency</subject><subject>harmonic tuned (HT) LC tank</subject><subject>Harmonics</subject><subject>Heat treatment</subject><subject>Information technology</subject><subject>low phase noise</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Noise</subject><subject>Oscillators, resonators, synthetizers</subject><subject>Phase noise</subject><subject>Semiconductor device noise</subject><subject>Silicon</subject><subject>Switching</subject><subject>Tanks</subject><subject>Voltage</subject><subject>voltage-controlled oscillator (VCO)</subject><subject>Voltage-controlled oscillators</subject><subject>Zero voltage switching</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkEtLw0AURgdRsFb3gptBEFep834sS_AFLV0Y3Q7T6QxNTZM6k1D896akUHB1udzzfVwOALcYTTBG-qmYF8WEICQmSkpG9RkYYc5lpoVE52CEEFaZZgpdgquUNv3KOFIjIKawavZwt7bJZ3VTJg_z-eIDfuULuC_bNVzbuG3q0sG2q_0KznLY2vr7GlwEWyV_c5xj8PnyXORv2Wzx-p5PZ5mjnLSZQJaLpcU-MEmcIDYwvMKcWC80VYK6lZdSUhf4CiHHl4EFhQPGmljumV7SMXgcenex-el8as22TM5Xla190yWjVN-DuOQ9ef-P3DRdrPvnjBKcEUYx6yE0QC42KUUfzC6WWxt_DUbmoNEcNJqDRjNo7CMPx16bnK1CtLUr0ykntSQK4567G7jSe386C44Y0fQPbiB4KQ</recordid><startdate>20060701</startdate><enddate>20060701</enddate><creator>KIM, Huijung</creator><creator>RYU, Seonghan</creator><creator>CHUNG, Yujin</creator><creator>CHOI, Jinsung</creator><creator>KIM, Bumman</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20060701</creationdate><title>A low phase-noise CMOS VCO with harmonic tuned LC tank</title><author>KIM, Huijung ; RYU, Seonghan ; CHUNG, Yujin ; CHOI, Jinsung ; KIM, Bumman</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c352t-60a56ba1ef472c62af41d152ae693863cde7773cf5d00c5bf4f81f1192a5e49b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>1f noise</topic><topic>Applied sciences</topic><topic>Circuit properties</topic><topic>CMOS</topic><topic>CMOS technology</topic><topic>Companies</topic><topic>Electric potential</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Frequency</topic><topic>harmonic tuned (HT) LC tank</topic><topic>Harmonics</topic><topic>Heat treatment</topic><topic>Information technology</topic><topic>low phase noise</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Noise</topic><topic>Oscillators, resonators, synthetizers</topic><topic>Phase noise</topic><topic>Semiconductor device noise</topic><topic>Silicon</topic><topic>Switching</topic><topic>Tanks</topic><topic>Voltage</topic><topic>voltage-controlled oscillator (VCO)</topic><topic>Voltage-controlled oscillators</topic><topic>Zero voltage switching</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KIM, Huijung</creatorcontrib><creatorcontrib>RYU, Seonghan</creatorcontrib><creatorcontrib>CHUNG, Yujin</creatorcontrib><creatorcontrib>CHOI, Jinsung</creatorcontrib><creatorcontrib>KIM, Bumman</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM, Huijung</au><au>RYU, Seonghan</au><au>CHUNG, Yujin</au><au>CHOI, Jinsung</au><au>KIM, Bumman</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A low phase-noise CMOS VCO with harmonic tuned LC tank</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2006-07-01</date><risdate>2006</risdate><volume>54</volume><issue>7</issue><spage>2917</spage><epage>2924</epage><pages>2917-2924</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>This paper presents a phase-noise reduction technique for voltage-controlled oscillators (VCOs) using a harmonic tuned (HT) LC tank. The phase-noise suppression is achieved through almost rectangular-shaped voltage at the switching differential cell, which effectively maximizes the slope of the switching cell output voltage at a zero crossing point. In addition, the proposed technique also suppresses the down-conversion of the noise around the second harmonic frequency by the second harmonic short of the tank. One second HT VCO and two third HT VCOs are designed and implemented to evaluate the concept using a 0.35- and 0.13-/spl mu/m CMOS process. The figure-of-merit (FOM) of the second HT VCO, third HT VCO1, and third HT VCO2 are -180.7, -183.7, and -189.5, respectively. The best FOM performance of the VCO has phase noises of -100.4, -132.0, and -140.8dBc/Hz at 100-kHz, 1-MHz, and 3-MHz offset frequencies at the 2-GHz carrier, respectively. This VCO consumes 3.29 mA from a 1.8-V supply with the silicon area of 500 /spl mu/m/spl times/750 /spl mu/m.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMTT.2006.877439</doi><tpages>8</tpages></addata></record> |
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| subjects | 1f noise Applied sciences Circuit properties CMOS CMOS technology Companies Electric potential Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Frequency harmonic tuned (HT) LC tank Harmonics Heat treatment Information technology low phase noise Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Noise Oscillators, resonators, synthetizers Phase noise Semiconductor device noise Silicon Switching Tanks Voltage voltage-controlled oscillator (VCO) Voltage-controlled oscillators Zero voltage switching |
| title | A low phase-noise CMOS VCO with harmonic tuned LC tank |
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