Comparison of the "pad-open-short" and "open-short-load" deembedding techniques for accurate on-wafer RF characterization of high-quality passives
The impedance errors remaining after applying the industry standard "open-short," a "pad-open-short," and a "open-short-load" deembedding scheme on a 0.43-nH 20-GHz high-Q single-loop inductor test structure are investigated using real S-parameter data taken up to 50 GH...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2005-02, Vol.53 (2), p.723-729 |
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| container_title | IEEE transactions on microwave theory and techniques |
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| creator | Tiemeijer, L.F. Havens, R.J. Jansman, A.B.M. Bouttement, Y. |
| description | The impedance errors remaining after applying the industry standard "open-short," a "pad-open-short," and a "open-short-load" deembedding scheme on a 0.43-nH 20-GHz high-Q single-loop inductor test structure are investigated using real S-parameter data taken up to 50 GHz. Since the latter two deembedding schemes both correct for all parasitic elements of the test structures, they are, at least in principle, error free. The accuracy of the "open-short-load" deembedding scheme, however, critically depends on how well the reactive part of the load resistance is accounted for. This issue makes the more simple "pad-open-short" deembedding scheme an attractive choice because the required split between external and internal capacitances is easy to make, either based on process and layout information or from measurements done on a "pad" dummy structure |
| doi_str_mv | 10.1109/TMTT.2004.840621 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_TMTT_2004_840621</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1393218</ieee_id><sourcerecordid>2351357331</sourcerecordid><originalsourceid>FETCH-LOGICAL-c349t-66a66002e2a7c7e1ff2edb3c3dced259f543c0a7c36b8e97e296f54253181b5a3</originalsourceid><addsrcrecordid>eNpdkU-L1EAQxRtRcFy9C16agOClx_6T7nSOMrgqrAgynkNNd2XTSyad7U5W1o_hJzYhCwOeiqr3q6oHj5C3gu-F4PXH4_fjcS85L_e25EaKZ2QntK5YbSr-nOw4F5bVpeUvyauc75a21NzuyN9DPI-QQo4DjS2dOqTFCJ7FEQeWu5imgsLgaXEZsD6CL6hHPJ_Q-zDc0gldN4T7GTNtY6Lg3JxgQhoH9htaTPTnNXUdJHATpvAHprC968Jtx-5n6MP0SEfIOTxgfk1etNBnfPNUr8iv68_Hw1d28-PLt8OnG-ZUWU_MGDCGc4kSKlehaFuJ_qSc8g691HWrS-X4oilzslhXKGuzzKRWwoqTBnVFPmx3xxRX61NzDtlh38OAcc6NMJUoObe6XtDiP_QuzmlY3DXWVKVRptILxDfIpZhzwrYZUzhDemwEb9aMmjWjZs2o2TJaVt4_3YXsoG8TDC7ky57Ri1e-cu82LiDiRVa1ksKqf9oxm8I</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>867463675</pqid></control><display><type>article</type><title>Comparison of the "pad-open-short" and "open-short-load" deembedding techniques for accurate on-wafer RF characterization of high-quality passives</title><source>IEEE Electronic Library (IEL)</source><creator>Tiemeijer, L.F. ; Havens, R.J. ; Jansman, A.B.M. ; Bouttement, Y.</creator><creatorcontrib>Tiemeijer, L.F. ; Havens, R.J. ; Jansman, A.B.M. ; Bouttement, Y.</creatorcontrib><description>The impedance errors remaining after applying the industry standard "open-short," a "pad-open-short," and a "open-short-load" deembedding scheme on a 0.43-nH 20-GHz high-Q single-loop inductor test structure are investigated using real S-parameter data taken up to 50 GHz. Since the latter two deembedding schemes both correct for all parasitic elements of the test structures, they are, at least in principle, error free. The accuracy of the "open-short-load" deembedding scheme, however, critically depends on how well the reactive part of the load resistance is accounted for. This issue makes the more simple "pad-open-short" deembedding scheme an attractive choice because the required split between external and internal capacitances is easy to make, either based on process and layout information or from measurements done on a "pad" dummy structure</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2004.840621</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Calibration ; Capacitance measurement ; Circuit testing ; deembedding ; Design. Technologies. Operation analysis. Testing ; Dummies ; Electrical resistance measurement ; Electronics ; Error analysis ; Error correction ; Exact sciences and technology ; Impedance ; Inductors ; Industry standards ; Integrated circuit measurements ; Integrated circuits ; Microwave integrated circuits ; Microwaves ; on-chip inductors ; on-wafer microwave measurements ; Radio frequencies ; Radio frequency ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Testing, measurement, noise and reliability ; Voltage</subject><ispartof>IEEE transactions on microwave theory and techniques, 2005-02, Vol.53 (2), p.723-729</ispartof><rights>2005 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2005</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c349t-66a66002e2a7c7e1ff2edb3c3dced259f543c0a7c36b8e97e296f54253181b5a3</citedby><cites>FETCH-LOGICAL-c349t-66a66002e2a7c7e1ff2edb3c3dced259f543c0a7c36b8e97e296f54253181b5a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1393218$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1393218$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16518101$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Tiemeijer, L.F.</creatorcontrib><creatorcontrib>Havens, R.J.</creatorcontrib><creatorcontrib>Jansman, A.B.M.</creatorcontrib><creatorcontrib>Bouttement, Y.</creatorcontrib><title>Comparison of the "pad-open-short" and "open-short-load" deembedding techniques for accurate on-wafer RF characterization of high-quality passives</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>The impedance errors remaining after applying the industry standard "open-short," a "pad-open-short," and a "open-short-load" deembedding scheme on a 0.43-nH 20-GHz high-Q single-loop inductor test structure are investigated using real S-parameter data taken up to 50 GHz. Since the latter two deembedding schemes both correct for all parasitic elements of the test structures, they are, at least in principle, error free. The accuracy of the "open-short-load" deembedding scheme, however, critically depends on how well the reactive part of the load resistance is accounted for. This issue makes the more simple "pad-open-short" deembedding scheme an attractive choice because the required split between external and internal capacitances is easy to make, either based on process and layout information or from measurements done on a "pad" dummy structure</description><subject>Applied sciences</subject><subject>Calibration</subject><subject>Capacitance measurement</subject><subject>Circuit testing</subject><subject>deembedding</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Dummies</subject><subject>Electrical resistance measurement</subject><subject>Electronics</subject><subject>Error analysis</subject><subject>Error correction</subject><subject>Exact sciences and technology</subject><subject>Impedance</subject><subject>Inductors</subject><subject>Industry standards</subject><subject>Integrated circuit measurements</subject><subject>Integrated circuits</subject><subject>Microwave integrated circuits</subject><subject>Microwaves</subject><subject>on-chip inductors</subject><subject>on-wafer microwave measurements</subject><subject>Radio frequencies</subject><subject>Radio frequency</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Testing, measurement, noise and reliability</subject><subject>Voltage</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkU-L1EAQxRtRcFy9C16agOClx_6T7nSOMrgqrAgynkNNd2XTSyad7U5W1o_hJzYhCwOeiqr3q6oHj5C3gu-F4PXH4_fjcS85L_e25EaKZ2QntK5YbSr-nOw4F5bVpeUvyauc75a21NzuyN9DPI-QQo4DjS2dOqTFCJ7FEQeWu5imgsLgaXEZsD6CL6hHPJ_Q-zDc0gldN4T7GTNtY6Lg3JxgQhoH9htaTPTnNXUdJHATpvAHprC968Jtx-5n6MP0SEfIOTxgfk1etNBnfPNUr8iv68_Hw1d28-PLt8OnG-ZUWU_MGDCGc4kSKlehaFuJ_qSc8g691HWrS-X4oilzslhXKGuzzKRWwoqTBnVFPmx3xxRX61NzDtlh38OAcc6NMJUoObe6XtDiP_QuzmlY3DXWVKVRptILxDfIpZhzwrYZUzhDemwEb9aMmjWjZs2o2TJaVt4_3YXsoG8TDC7ky57Ri1e-cu82LiDiRVa1ksKqf9oxm8I</recordid><startdate>20050201</startdate><enddate>20050201</enddate><creator>Tiemeijer, L.F.</creator><creator>Havens, R.J.</creator><creator>Jansman, A.B.M.</creator><creator>Bouttement, Y.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20050201</creationdate><title>Comparison of the "pad-open-short" and "open-short-load" deembedding techniques for accurate on-wafer RF characterization of high-quality passives</title><author>Tiemeijer, L.F. ; Havens, R.J. ; Jansman, A.B.M. ; Bouttement, Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c349t-66a66002e2a7c7e1ff2edb3c3dced259f543c0a7c36b8e97e296f54253181b5a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Applied sciences</topic><topic>Calibration</topic><topic>Capacitance measurement</topic><topic>Circuit testing</topic><topic>deembedding</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Dummies</topic><topic>Electrical resistance measurement</topic><topic>Electronics</topic><topic>Error analysis</topic><topic>Error correction</topic><topic>Exact sciences and technology</topic><topic>Impedance</topic><topic>Inductors</topic><topic>Industry standards</topic><topic>Integrated circuit measurements</topic><topic>Integrated circuits</topic><topic>Microwave integrated circuits</topic><topic>Microwaves</topic><topic>on-chip inductors</topic><topic>on-wafer microwave measurements</topic><topic>Radio frequencies</topic><topic>Radio frequency</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Testing, measurement, noise and reliability</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tiemeijer, L.F.</creatorcontrib><creatorcontrib>Havens, R.J.</creatorcontrib><creatorcontrib>Jansman, A.B.M.</creatorcontrib><creatorcontrib>Bouttement, Y.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tiemeijer, L.F.</au><au>Havens, R.J.</au><au>Jansman, A.B.M.</au><au>Bouttement, Y.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comparison of the "pad-open-short" and "open-short-load" deembedding techniques for accurate on-wafer RF characterization of high-quality passives</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2005-02-01</date><risdate>2005</risdate><volume>53</volume><issue>2</issue><spage>723</spage><epage>729</epage><pages>723-729</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>The impedance errors remaining after applying the industry standard "open-short," a "pad-open-short," and a "open-short-load" deembedding scheme on a 0.43-nH 20-GHz high-Q single-loop inductor test structure are investigated using real S-parameter data taken up to 50 GHz. Since the latter two deembedding schemes both correct for all parasitic elements of the test structures, they are, at least in principle, error free. The accuracy of the "open-short-load" deembedding scheme, however, critically depends on how well the reactive part of the load resistance is accounted for. This issue makes the more simple "pad-open-short" deembedding scheme an attractive choice because the required split between external and internal capacitances is easy to make, either based on process and layout information or from measurements done on a "pad" dummy structure</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMTT.2004.840621</doi><tpages>7</tpages></addata></record> |
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| subjects | Applied sciences Calibration Capacitance measurement Circuit testing deembedding Design. Technologies. Operation analysis. Testing Dummies Electrical resistance measurement Electronics Error analysis Error correction Exact sciences and technology Impedance Inductors Industry standards Integrated circuit measurements Integrated circuits Microwave integrated circuits Microwaves on-chip inductors on-wafer microwave measurements Radio frequencies Radio frequency Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Testing, measurement, noise and reliability Voltage |
| title | Comparison of the "pad-open-short" and "open-short-load" deembedding techniques for accurate on-wafer RF characterization of high-quality passives |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-11T07%3A48%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Comparison%20of%20the%20%22pad-open-short%22%20and%20%22open-short-load%22%20deembedding%20techniques%20for%20accurate%20on-wafer%20RF%20characterization%20of%20high-quality%20passives&rft.jtitle=IEEE%20transactions%20on%20microwave%20theory%20and%20techniques&rft.au=Tiemeijer,%20L.F.&rft.date=2005-02-01&rft.volume=53&rft.issue=2&rft.spage=723&rft.epage=729&rft.pages=723-729&rft.issn=0018-9480&rft.eissn=1557-9670&rft.coden=IETMAB&rft_id=info:doi/10.1109/TMTT.2004.840621&rft_dat=%3Cproquest_RIE%3E2351357331%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=867463675&rft_id=info:pmid/&rft_ieee_id=1393218&rfr_iscdi=true |